VLIN1626-02G-E3-08 - VISHAY

VLIN1626-02G

www.vishay.com Vishay Semiconductors

Rev. 1.2, 23-Feb-16 1Document Number: 85902

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Low Capacitance, Single-Line ESD-Protection Diode in SOD-323

MARKING (example only)

XYZ = type code (see table below)

bar = pin 1

FEATURES

• For LIN-Bus applications

• Small SOD-323 package

• Working range: -16 V; +26.5 V

• Low leakage current IR < 0.05 μA

• Low load capacitance CD < 18 pF

• ESD-protection acc. IEC 61000-4-2

± 30 kV contact discharge

± 30 kV air discharge

• ESD capability according to AEC-Q101:

human body model: class H3B: > 8 kV

• e3 - pins plated with tin (Sn)

• 1-line ESD-protection

• AEC-Q101 qualified available

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

SOD-323

22756

20503

XYZ

ORDERING INFORMATION

PART

NUMBER

(EXAMPLE)

ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE

ORDERING CODE

(EXAMPLE)

AEC-Q101

QUALIFIED

HS-COMPLIANT + LEAD

)-FREE TERMINATIONS

TIN

PLATED

3K PER 7" REEL

(8 mm TAPE)

15K/BOX = MOQ

10K PER 13" REEL

(8 mm TAPE)

10K/BOX = MOQ

STANDARD GREEN

VLIN1626-02G

3-08

VLIN1626-02G-E3-08

VLIN1626-02G H E

3-08

VLIN1626-02GHE3-08

VLIN1626-02G

-18 VLIN1626-02G-E3-18

VLIN1626-02G H E

-18 VLIN1626-02GHE3-18

PACKAGE DATA

DEVICE NAME PACKAGE

NAME

TYPE

CODE WEIGHT MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE

SENSITIVITY LEVEL

SOLDERING

CONDITIONS

VLIN1626-02G

SOD-323 6A1 4.30 mg UL 94 V-0 MSL level 1

(according J-STD-020)

Peak temperature

max. 260 °C

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Pin 1 to pin 2; TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single

IPPM

Pin 2 to pin 1; TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single 4

Peak pulse power TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single shot PPP 200 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C VESD

± 30 kV

Air discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C ± 30

Operating temperature Junction temperature TJ-55 to +150 °C

Storage temperature TSTG -55 to +150

VLIN1626-02G

www.vishay.com Vishay Semiconductors

Rev. 1.2, 23-Feb-16 2Document Number: 85902

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330  / 150 pF)

Fig. 2 - 8/20 μs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR

Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected Nchannel --1lines

Reverse stand-off voltage Pin 1 to pin 2; max. reverse working voltage VRWM

--16

Pin 2 to pin 1; max. reverse working voltage - - 26.5

Reverse voltage Pin 1 to pin 2; at IR = 0.05 μA VR

16 - - V

Pin 2 to pin 1; at IR = 0.05 μA 26.5 - -

Reverse current Pin 1 to pin 2; at VRWM = 16 V IR

--0.05

μA

Pin 2 to pin 1; at VRWM = 26.5 V - - 0.05

Reverse breakdown voltage Pin 1 to pin 2; at IR = 1 mA VBR

17.1 18.7 20.3 V

Pin 2 to pin 1; at IR = 1 mA 28 30 32

Reverse clamping voltage

Pin 1 to pin 2; at IPP = 1 A; tp = 8/20 μs

-2225

Pin 1 to pin 2; at IPP = 6 A; tp = 8/20 μs - 29 33

Pin 2 to pin 1; at IPP = 1 A; tp = 8/20 μs - 32 40

Pin 2 to pin 1; at IPP = 4 A; tp = 8/20 μs - 39 50

Capacitance At VR = 0 V, f = 1 MHz CD- 15.5 18 pF

100

1000

10000

100

120

-10 0 10 20 30 40 50 60 70 80 90 100

Axis Title

1st line

2nd line

IESD (%)

t (ns)

2nd line

Rise time = 0.7 ns to 1 ns

20557

100

1000

10000

100

010203040

Axis Title

1st line

2nd line

IPPM (%)

t (µs)

2nd line

20 µs to 50 %

8 µs to 100 %

20548

VR (V)

CD (pF)

22767

-20 -10 0 10 20 30

f = 1 MHz

Pin 2 -1

100

1000

10000

0.01 0.1 1 10 100 1000 10 000

Axis Title

1st line

2nd line

VR(V)

IR(µA)

2nd line

TJ= 150 °C

75 °C

25 °C

-40 °C

100 °C

Pin 2-1

22811

VLIN1626-02G

www.vishay.com Vishay Semiconductors

Rev. 1.2, 23-Feb-16 3Document Number: 85902

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR

Fig. 6 - Typical Peak Clamping Voltage VC vs.

Peak Pulse Current IPP

Fig. 7 - Typical Clamping Voltage VC-TLP vs. Pulse Current ITLP

22812

0.01 0.1 1 10 100 1000 10 000

2nd line

VR(V)

IR(µA)

2nd line

= 150 °C

75 °C

25 °C

-40 °C

100 °C

Pin 1-2

01234567

2nd line

VC(V)

IPP (A)

2nd line

Measured according IEC 61000-4-5

(8/20 µs - wave form)

Pin 1-2

Pin 2-1

22813

TLP

(A)

C-TLP

(V)

22770

0 102030405060

Transmission Line Pulse

TLP: tp = 100 ns Pin 2-1

Pin 1- 2

VLIN1626-02G

www.vishay.com Vishay Semiconductors

Rev. 1.2, 23-Feb-16 4Document Number: 85902

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters (inches) SOD-323

Foot print recommendation:

Rev. 5 - Date: 23.Sept.2009

22771

Document no.: S8-V-3910.02-001 (4)

0.6 [0.024]

0.6 [0.024]0.6 [0.024]

1.6 [0.063]

0.10 [0.004]

Cathode bar

0.20 [0.008]

0.40 [0.016]

2.50 [0.098]

1.1 [0.043]

1.5 [0.059]

2.85 [0.112]

1.60 [0.063]

1.95 [0.077]

0.15 [0.006]

0.1 [0.004] max.

1.15 [0.045]

0.8 [0.031]

Created - Date: 24.August.2004

0.40 [0.016]

0.25 [0.010]

0.2 [0.008]

0-8°

VLIN1626-02G

www.vishay.com Vishay Semiconductors

Rev. 1.2, 23-Feb-16 5Document Number: 85902

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CARRIER TAPE SOD-323

ORIENTATION IN CARRIER TAPE SOD-323

Document no.: S8-V-3717.07-002 (4)

Created - Date: 09. Feb. 2010

22824

A-A Section

4 ± 0.1

2 ± 0.05

1.75 ± 0.1

0.254 ± 0.013

Ø 1 +0.25

0.00

4± 0.1

3.5 ± 0.05

8+0.3

-0.1

B-B Section

2.9 ± 0.1

1.35 ± 0.1

1.52 ± 0.1

Ø 1.5 +0.1

0.0

Top view

Cathode

Unreeling direction

Document no.: S8-V-3717.07-003 (4)

Created - Date: 09. Feb. 2010

22772

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 01-Jan-2019 1Document Number: 91000

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