N-Channel MOSFET 500V, 5.0 A, 1.4 General Description Features The MDP/F5N50B uses advanced Magnachip's MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 500V ID = 5.0A RDS(ON) 1.4 MDP/F5N50B is suitable device for SMPS, HID and general purpose applications. Applications @VGS = 10V @VGS = 10V Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Drain-Source Voltage VDSS Gate-Source Voltage TC=25 C Continuous Drain Current ID o TC=100 C (1) IDM o TC=25 C Power Dissipation o Derate above 25 C (1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (3) (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range PD MDF5N50B Unit 500 VGSS o Pulsed Drain Current MDP5N50B V 30 V 5.0 5.0* A 3.2 3.2* A 20 20* A 93 27 W 0.74 0.22 W/ C o EAR 9.3 mJ dv/dt 4.5 V/ns EAS 230 mJ TJ, Tstg -55~150 o C Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol MDP5N50B MDF5N50B (1) RJA 62.5 62.5 RJC 1.35 4.6 Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Dec 2011. Version 1.0 (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDP5N50B / MDF5N50B N-channel MOSFET 500V MDP5N50B / MDF5N50B Part Number Temp. Range Package Packing RoHS Status o TO-220 Tube Halogen Free o TO-220F Tube Halogen Free MDP5N50BTH -55~150 C MDF5N50BTH -55~150 C Electrical Characteristics (Ta = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 - 4.0 IDSS VDS = 500V, VGS = 0V - - 1 A Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance IGSS V VGS = 30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 2.5A - 1.15 1.4 gfs VDS = 30V, ID = 2.5A - 5 - S - 11.5 - - 2.3 - - 4.1 - - 513 - - 3.6 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 400V, ID = 5.0A, VGS = 10V (3) nC Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 69 - Turn-On td(on) - 11 - - 16 - - 46 - tf - 24 - IS - 5.0 - A - - 1.4 V - 232 - ns - 1.3 - C Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 250V, ID = 5.0A, (3) RG = 25 pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 5.0A, VGS = 0V IF = 5.0A, dl/dt = 100A/s (3) Note : 1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C. 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C. 3. ISD 5.0A, di/dt200A/us, VDDBVDSS, Rg =25, Starting TJ=25C 4. L=16.5mH, IAS=5.0A, VDD=50V, , Rg =25, Starting TJ=25C Dec 2011. Version 1.0 2 MagnaChip Semiconductor Ltd. MDP5N50B / MDF5N50B N-channel MOSFET 500V Ordering Information MDP5N50B / MDF5N50B N-channel MOSFET 500V Vgs=5.0V =5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 8 Notes 1. 250 Pulse Test 2. TC=25 2.5 RDS(ON) [ ] ID,Drain Current [A] 12 4 2.0 VGS=10V 1.5 0 VGS=20V 1.0 0 5 10 15 20 25 2.5 5.0 VDS,Drain-Source Voltage [V] ID,Drain Current [A] 3.0 1.2 Notes : 1. VGS = 10 V 2. ID = 5.0A 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 10.0 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 Notes : 1. VGS = 0 V 2. ID = 250 1.1 1.0 0.9 0.8 -50 200 0 50 o Notes : 1. VGS = 0 V 2.250s Pulse test IDR Reverse Drain Current [A] -55 150 25 3 4 5 6 7 150 25 1 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Dec 2011. Version 1.0 10 0.1 0.2 0.1 2 200 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. Vds=30V 1 150 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 10 100 o TJ, Junction Temperature [ C] ID(A) 7.5 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. 100V 250V 400V 8 VGS, Gate-Source Voltage [V] MDP5N50B / MDF5N50B N-channel MOSFET 500V 1400 10 Coss 1200 Note : ID = 5.0A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitance [pF] 1000 6 4 Notes ; 1. VGS = 0 V 2. f = 1 MHz Ciss 800 600 Crss 400 2 200 0 0 0 2 4 6 8 10 1 12 Fig.7 Gate Charge Characteristics 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.8 Capacitance Characteristics 8 2 Operation in This Area is Limited by R DS(on) 10 s 6 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 100 s 1 10 ms 10 10 DC 0 100 ms -1 4 2 Single Pulse TJ=Max rated TC=25 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 Fig.9 Maximum Safe Operating Area MDP5N50B (TO-220) Fig.10 Maximum Drain Current vs. Case Temperature 10000 single Pulse RthJC = 1.35/W TC = 25 0 8000 D=0.5 Power (W) Z JC(t), Thermal Response 10 0.2 0.1 -1 10 150 TC, Case Temperature [] V DS, Drain-Source Voltage [V] 0.05 0.02 0.01 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=1.35/W single pulse 6000 4000 2000 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation - MDP5N50B (TO-220) Fig.11 Transient Thermal Response Curve MDP5N50B (TO-220) Dec 2011. Version 1.0 1E-4 4 MagnaChip Semiconductor Ltd. 2 Operation in This Area is Limited by R DS(on) 10000 single Pulse RthJC = 4.6/W TC = 25 10 s 100 s 1 8000 1 ms 10 ms 10 10 100 ms DC 0 Power (W) ID, Drain Current [A] 10 2000 -2 10 -1 10 0 10 1 10 0 1E-5 2 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) VDS, Drain-Source Voltage [V] Fig.14 Single Pulse Maximum Power Dissipation - MDF5N50B (TO-220F) Fig.13 Maximum Safe Operating Area MDF5N50B (TO-220F) Z JC(t), Normalized Thermal Response 4000 -1 Single Pulse TJ=Max rated TC=25 10 6000 D=0.5 0 10 0.2 0.1 0.05 -1 10 0.02 0.01 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=4.6/W single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.15 Transient Thermal Response Curve MDF5N50B (TO-220F) Dec 2011. Version 1.0 5 MagnaChip Semiconductor Ltd. MDP5N50B / MDF5N50B N-channel MOSFET 500V 10 MDP5N50B / MDF5N50B N-channel MOSFET 500V Physical Dimensions 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Dec 2011. Version 1.0 6 MagnaChip Semiconductor Ltd. MDP5N50B / MDF5N50B N-channel MOSFET 500V Physical Dimension 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified Symbol A b b1 C D E e F G L L1 Q Q1 R Dec 2011. Version 1.0 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 7 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. \ MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec 2011. Version 1.0 8 MagnaChip Semiconductor Ltd. MDP5N50B / MDF5N50B N-channel MOSFET 500V Worldwide Sales Support Locations