MDF5N50BTH - MagnaChip Semiconductor

Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd.

1

MDP5N50B / MDF5N50B N-channel MOSFET 500V

Absolute Maximum Ratings (Ta = 25

o

C)

Characteristics Symbol MDP5N50B

MDF5N50B

Unit

Drain-Source Voltage VDSS 500 V

Gate-Source Voltage VGSS ±30 V

Continuous Drain Current

TC=25oC

ID

5.0 5.0* A

TC=100oC 3.2 3.2* A

Pulsed Drain Current(1) IDM 20 20* A

Power Dissipation

TC=25oC

PD

93 27 W

Derate above 25 oC 0.74 0.22 W/ oC

Repetitive Avalanche Energy(1) EAR 9.3 mJ

Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns

Single Pulse Avalanche Energy(4) EAS 230 mJ

Junction and Storage Temperature Range TJ, Tstg -55~150 oC

※ Id limited by maximum junction temperature

Thermal Characteristics

Characteristics Symbol MDP5N50B

MDF5N50B

Unit

Thermal Resistance, Junction-to-Ambient(1) RθJA 62.5 62.5 oC/W

Thermal Resistance, Junction-to-Case(1) RθJC 1.35 4.6

MDP5N50

B / MDF5N50B

N-Channel MOSFET 500V, 5.0 A, 1.4

Ω

General Description

The MDP/F5N50B uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

MDP/F5N50B is suitable device for SMPS, HID and

general purpose applications.

Features

 VDS = 500V

 ID = 5.0A @VGS = 10V

 RDS(ON) ≤ 1.4Ω @VGS = 10V

Applications

 Power Supply

 PFC

 Ballast

Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd.

2

MDP5N50B / MDF5N50B N-channel MOSFET 500V

Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDP5N50BTH -55~150oC TO-220 Tube Halogen Free

MDF5N50BTH -55~150oC TO-220F Tube Halogen Free

Electrical Characteristics (Ta = 25oC)

Characteristics Symbol

Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - - V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0

Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA

Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA

Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 2.5A - 1.15 1.4 Ω

Forward Transconductance gfs VDS = 30V, ID = 2.5A - 5 - S

Dynamic Characteristics

Total Gate Charge Qg

VDS = 400V, ID = 5.0A, VGS = 10V(3)

- 11.5 -

nC

Gate-Source Charge Qgs - 2.3 -

Gate-Drain Charge Qgd - 4.1 -

Input Capacitance Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

- 513 -

pF

Reverse Transfer Capacitance Crss - 3.6 -

Output Capacitance Coss - 69 -

Turn-On Delay Time td(on)

VGS = 10V, VDS = 250V, ID = 5.0A,

RG = 25Ω(3)

- 11 -

ns

Rise Time tr - 16 -

Turn-Off Delay Time td(off) - 46 -

Fall Time tf - 24 -

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to Source

Diode Forward Current IS - 5.0 - A

Source-Drain Diode Forward Voltage VSD IS = 5.0A, VGS = 0V - - 1.4 V

Body Diode Reverse Recovery Time trr IF = 5.0A, dl/dt = 100A/µs(3) - 232 - ns

Body Diode Reverse Recovery Charge

Qrr - 1.3 - µC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3. ISD ≤5.0A, di/dt≤200A/us, VDD≤BVDSS, Rg =25Ω, Starting TJ=25°C

4. L=16.5mH, IAS=5.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C

Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd.

3

MDP5N50B / MDF5N50B N-channel MOSFET 500V

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with

Temperature

Fig.4 Breakdown Voltage Variation vs.

Temperature

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

0 5 10 15 20 25

0

4

8

12

Notes

1. 250㎲

㎲㎲

㎲ Pulse Test

2. T

C

=25℃

℃℃

℃

V

gs

=5.0V

=5.5V

=6.0V

=6.5V

=7.0V

=8.0V

=10.0V

=15.0V

ID,Drain Current [A]

V

DS

,Drain-Source Voltage [V]

-50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :※

1. VGS = 0 V

2. ID = 250㎂

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

2.5 5.0 7.5 10.0

1.0

1.5

2.0

2.5

V

GS

=10V

V

GS

=20V

RDS(ON) [Ω ]

ID

,Drain Current [A]

234567

0.1

1

10

-55℃

25℃

150℃

* Notes ;

1. Vds=30V

ID(A)

VGS

[V]

0.2 0.4 0.6 0.8 1.0 1.2

0.1

1

10

25

℃

150

℃

Notes :

※

1. V

GS

= 0 V

2.250µs Pulse test

I

DR

Reverse Drain Current [A]

V

SD

, Source-Drain Voltage [V]

-50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :※

※※

※

1. VGS = 10 V

2. ID = 5.0A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd.

4

MDP5N50B / MDF5N50B N-channel MOSFET 500V

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

MDP5N50B (TO-220)

Fig.10 Maximum Drain Current vs. Case

Temperature

Fig.11 Transient Thermal Response Curve

MDP5N50B (TO-220)

Fig.12 Single Pulse Maximum Power

Dissipation – MDP5N50B (TO-220)

10-1 100101102

10-2

10-1

100

101

102

10 µs

100 µs

100 ms

DC

10 ms

1 ms

Operation in This Area

is Limited by R DS(on)

Single Pulse

TJ=Max rated

TC=25℃

℃℃

℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

Notes :※

Duty Factor, D=t1/t2

PEAK TJ = PDM

* Zθ JC

* Rθ JC

(t) + TC

RΘ JC

=1.35 /W℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ JC

(t),

Thermal Response

t1, Rectangular Pulse Duration [sec]

1E-5 1E-4 1E-3 0.01 0.1 1 10

0

2000

4000

6000

8000

10000 single Pulse

RthJC = 1.35 /W℃

℃℃

℃

TC = 25℃

℃℃

℃

Power (W)

Pulse Width (s)

0 2 4 6 8 10 12

0

2

4

6

8

10

400V

250V

100V

Note : I※

※※

※D = 5.0A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

1 10

0

200

400

600

800

1000

1200

1400

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Notes ;※

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 150

0

2

4

6

8

ID, Drain Current [A]

TC, Case Temperature [ ]℃

Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd.

5

MDP5N50B / MDF5N50B N-channel MOSFET 500V

Fig.13 Maximum Safe Operating Area

MDF5N50B (TO-220F)

Fig.14 Single Pulse Maximum Power

Dissipation – MDF5N50B (TO-220F)

Fig.15 Transient Thermal Response Curve

MDF5N50B (TO-220F)

10-1 100101102

10-2

10-1

100

101

102

10 µs

100 µs

100 ms

DC

10 ms

1 ms

Operation in This Area

is Limited by R DS(on)

Single Pulse

TJ=Max rated

TC=25℃

℃℃

℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

1E-5 1E-4 1E-3 0.01 0.1 1 10

0

2000

4000

6000

8000

10000 single Pulse

R

thJC = 4.6 /W℃

℃℃

℃

TC = 25℃

℃℃

℃

Power (W)

Pulse Width (s)

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

Notes :※

Duty Factor, D=t1/t2

PEAK TJ = PDM

* Zθ JC

* Rθ JC

(t) + TC

RΘ JC

=4.6 /W℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ JC

(t),

Normalized Thermal Response

t1, Rectangular Pulse Duration [sec]

Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd.

6

MDP5N50B / MDF5N50B N-channel MOSFET 500V

Physical Dimensions

3 Leads, TO-220

Dimensions are in millimeters unless otherwise specified

Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd.

7

MDP5N50B / MDF5N50B N-channel MOSFET 500V

Physical Dimension

3 Leads, TO-220F

Dimensions are in millimeters unless otherwise specified

Symbol Min Nom Max

A 4.50 4.93

b 0.63 0.91

b1 1.15 1.47

C 0.33 0.63

D 15.47 16.13

E 9.60 10.71

e 2.54

F 2.34 2.84

G 6.48 6.90

L 12.24 13.72

L1 2.79 3.67

Q 2.52 2.96

Q1 3.10 3.50

￠R 3.00 3.55

Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd.

8

MDP5N50B / MDF5N50B N-channel MOSFET 500V

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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power

generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be

expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such

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for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip

Semiconductor Ltd.