SQJ262EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFETs FEATURESS PowerPAK(R) SO-8L Dual Asymmetric * TrenchFET(R) power MOSFET * AEC-Q101 qualified * 100 % Rg and UIS tested D1 * Optimized for synchronous buck applications D2 15 6. m m 13 5. 1 m m 4 G2 Bottom View Top View 2 3 G1 S2 1 S1 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 PRODUCT SUMMARY N-CHANNEL 1 VDS (V) N-CHANNEL 2 60 60 RDS(on) () at VGS = 10 V 0.0355 0.0155 RDS(on) () at VGS = 4.5 V 0.0480 0.0200 15 40 ID (A) Configuration Dual N Package PowerPAK SO-8L Dual Asymmetric G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-source voltage VDS 60 60 Gate-source voltage VGS Continuous drain current TC = 25 C TC = 125 C Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 C TC = 125 C Operating junction and storage temperature range ID 20 15 a 40 11 23 IS 15 a 44 IDM 30 70 IAS 12 20 EAS 7.2 20 27 48 9 16 PD TJ, Tstg -55 to +175 Soldering recommendations (peak temperature) d, e UNIT V A mJ W C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL N-CHANNEL 1 N-CHANNEL 2 RthJA 85 85 RthJC 5.5 3.1 UNIT C/W Notes a. Package limited b. Pulse test; pulse width 300 s, duty cycle 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-0665-Rev. A, 15-May-17 Document Number: 75504 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ262EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a VDS VGS(th) IGSS IDSS ID(on) RDS(on) VGS = 0 V, ID = 250 A N-Ch 1 60 - VGS = 0 V, ID = 250 A N-Ch 2 60 - - VDS = VGS, ID = 250 A N-Ch 1 1.5 2.0 2.5 VDS = VGS, ID = 250 A N-Ch 2 1.5 2.0 2.5 N-Ch 1 - - 100 N-Ch 2 - - 100 VDS = 0 V, VGS = 20 V VGS = 0 V VDS = 60 V N-Ch 1 - - 1 VGS = 0 V VDS = 60 V N-Ch 2 - - 1 VGS = 0 V VDS = 60 V, TJ = 125 C N-Ch 1 - - 50 VGS = 0 V VDS = 60 V, TJ = 125 C N-Ch 2 - - 50 VGS = 0 V VDS = 60 V, TJ = 175 C N-Ch 1 - - 250 VGS = 0 V VDS = 60 V, TJ = 175 C N-Ch 2 - - 250 VGS = 10 V VDS 5 V N-Ch 1 10 - - VGS = 10 V VDS 5 V N-Ch 2 20 - - VGS = 10 V ID = 2 A N-Ch 1 - 0.0295 0.0355 VGS = 10 V ID = 5 A N-Ch 2 - 0.0126 0.0155 VGS = 10 V ID = 2 A, TJ = 125 C N-Ch 1 - - 0.0563 VGS = 10 V ID = 5 A, TJ = 125 C N-Ch 2 - - 0.0253 VGS = 10 V ID = 2 A, TJ = 175 C N-Ch 1 - - 0.0700 - 0.0311 VGS = 10 V ID = 5 A, TJ = 175 C N-Ch 2 - VGS = 4.5 V ID = 1 A N-Ch 1 - 0.0400 0.0480 VGS = 4.5 V ID = 3 A N-Ch 2 - 0.0165 0.0200 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 410 550 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 967 1260 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 212 280 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 436 570 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 15 20 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 18 25 VGS = 10 V VDS = 30 V, ID = 1 A N-Ch 1 - 6.5 10 V nA A A Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance S17-0665-Rev. A, 15-May-17 Rg VGS = 10 V VDS = 30 V, ID = 2 A N-Ch 2 - 14.5 23 VGS = 10 V VDS = 30 V, ID = 1 A N-Ch 1 - 1.4 - VGS = 10 V VDS = 30 V, ID = 2 A N-Ch 2 - 2.7 - VGS = 10 V VDS = 30 V, ID = 1 A N-Ch 1 - 0.9 - VGS = 10 V VDS = 30 V, ID = 2 A N-Ch 2 - 2.1 - N-Ch 1 0.7 1.47 2.2 N-Ch 2 0.3 0.62 0.95 f = 1 MHz pF nC Document Number: 75504 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ262EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic b Turn-on delay Rise time c time c Turn-off delay time c Fall time c td(on) tr td(off) tf VDD = 30 V, RL = 30 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 9 15 VDD = 30 V, RL = 15 , ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 13 20 VDD = 30 V, RL = 30 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 3 5 VDD = 30 V, RL = 15 , ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 3 5 VDD = 30 V, RL = 30 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 15 25 VDD = 30 V, RL = 15 , ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 23 35 VDD = 30 V, RL = 30 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 10 15 VDD = 30 V, RL = 15 , ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 10 15 N-Ch 1 - - 30 N-Ch 2 - - 70 IF = 2 A, VGS = 0 V N-Ch 1 - 0.81 1.2 IF = 5 A, VGS = 0 V N-Ch 2 - 0.80 1.2 ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time Body diode peak reverse recovery current tb IRM(REC) IF = 2 A, di/dt = 100 A/s N-Ch 1 - 24 50 IF = 3 A, di/dt = 100 A/s N-Ch 2 - 36 75 IF = 2 A, di/dt = 100 A/s N-Ch 1 - 17 35 IF = 3 A, di/dt = 100 A/s N-Ch 2 - 30 60 IF = 2 A, di/dt = 100 A/s N-Ch 1 - 12 - IF = 3 A, di/dt = 100 A/s N-Ch 2 - 19 - IF = 2 A, di/dt = 100 A/s N-Ch 1 - 12 - IF = 3 A, di/dt = 100 A/s N-Ch 2 - 17 - IF = 2 A, di/dt = 100 A/s N-Ch 1 - -1.3 - IF = 3 A, di/dt = 100 A/s N-Ch 2 - -1.6 - A V ns nC ns A Notes a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0665-Rev. A, 15-May-17 Document Number: 75504 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ262EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 30 600 10000 10000 VGS = 10 V thru 5 V VGS = 4 V 18 12 100 VGS = 3 V 6 Ciss 1000 360 1st line 2nd line 1000 2nd line C - Capacitance (pF) 480 1st line 2nd line 2nd line ID - Drain Current (A) 24 Coss 240 100 120 Crss 0 0 10 0 2 4 6 8 10 10 0 VDS - Drain-to-Source Voltage (V) 2nd line 12 24 Axis Title Axis Title 10 TC = 25 C 100 TC = 125 C TC = -55 C 0 10 2 4 6 8 10000 ID = 1 A VDS = 30 V 8 1000 6 1st line 2nd line 1000 15 1st line 2nd line 2nd line ID - Drain Current (A) 20 2nd line VGS - Gate-to-Source Voltage (V) 10000 0 4 100 2 0 10 10 0 2 4 Transfer Characteristics Gate Charge 100 10000 10000 10 1st line 2nd line 0.06 VGS = 4.5 V 0.04 100 VGS = 10 V 0.00 10 8 12 16 20 TJ = 150 C 1000 1 1st line 2nd line 1000 2nd line IS - Source Current (A) 0.08 4 10 Axis Title Axis Title 2nd line RDS(on) - On-Resistance () 8 Qg - Total Gate Charge (nC) 2nd line 0.10 0 6 VGS - Gate-to-Source Voltage (V) 2nd line 0.02 60 Capacitance 25 5 48 VDS - Drain-to-Source Voltage (V) 2nd line Output Characteristics 10 36 0.1 TJ = 25 C 100 0.01 0.001 10 0 0.2 0.4 0.6 0.8 1.0 1.2 ID - Drain Current (A) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Drain Current Source Drain Diode Forward Voltage S17-0665-Rev. A, 15-May-17 Document Number: 75504 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ262EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 0.20 2nd line RDS(on) - On-Resistance () 10000 1000 -0.1 1st line 2nd line 2nd line VGS(th) Variance (V) 0.2 ID = 5 mA -0.4 100 ID = 250 A -0.7 10000 0.16 1000 0.12 1st line 2nd line 0.5 0.08 TJ = 150 C 100 0.04 TJ = 25 C -1.0 0.00 10 -50 -25 0 25 50 10 75 100 125 150 175 0 2 4 Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 76 10000 1000 1.4 VGS = 4.5 V 1.1 100 0.8 0.5 74 1000 72 70 100 68 66 10 25 50 1st line 2nd line VGS = 10 V 1.7 10000 ID = 1 mA 2nd line VDS - Drain-to-Source Voltage (V) ID = 2 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 0 8 TJ - Temperature (C) 2nd line 2.0 -50 -25 6 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line TJ - Junction Temperature (C) 2nd line On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature Axis Title 1000 10000 IDM limited 1000 100 s 10 ID limited 1 1 ms 10 ms 100 100 ms, 1 s, 10 s, DC Limited by RDS(on) (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 0.1 TC = 25 C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S17-0665-Rev. A, 15-May-17 Document Number: 75504 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ262EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = R thJA = 85 C/W 0.02 3. TJM - TA = PDM ZthJA(t) 4. Surface mounted Single pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) is given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions S17-0665-Rev. A, 15-May-17 Document Number: 75504 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ262EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 90 1500 10000 10000 VGS = 10 V thru 5V 36 100 VGS = 3 V 18 Ciss 1000 900 1st line 2nd line 1000 54 2nd line C - Capacitance (pF) 1200 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 72 600 Coss 100 300 Crss 0 0 10 0 2 4 6 8 10 10 0 12 24 VDS - Drain-to-Source Voltage (V) 2nd line Output Characteristics Capacitance Axis Title Axis Title 100 TC = 25 C 12 TC = -55 C 0 4 6 8 ID = 2 A VDS = 30 V 8 1000 6 4 100 2 0 10 2 10000 1st line 2nd line 24 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 10 10 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Transfer Characteristics Gate Charge 15 Axis Title Axis Title 0.05 100 10000 10000 10 1000 1st line 2nd line 0.03 VGS = 4.5 V 0.02 100 0.01 VGS = 10 V 0.00 10 0 12 24 36 48 60 2nd line IS - Source Current (A) 0.04 1000 1 1st line 2nd line 2nd line ID - Drain Current (A) 1000 36 TC = 125 C 60 10 10000 48 2nd line RDS(on) - On-Resistance () 48 VDS - Drain-to-Source Voltage (V) 2nd line 60 0 36 TJ = 25 C 0.1 TJ = 150 C 100 0.01 0.001 10 0 0.2 0.4 0.6 0.8 1.0 1.2 ID - Drain Current (A) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Drain Current Source Drain Diode Forward Voltage S17-0665-Rev. A, 15-May-17 Document Number: 75504 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ262EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 0.10 2nd line RDS(on) - On-Resistance () 10000 1000 -0.1 1st line 2nd line 2nd line VGS(th) Variance (V) 0.2 ID = 5 mA -0.4 100 -0.7 10000 0.08 1000 0.06 1st line 2nd line 0.5 0.04 0.02 TJ = 25 C ID = 250 A -1.0 0.00 10 -50 -25 0 25 50 10 75 100 125 150 175 0 2 4 6 8 10 TJ - Temperature (C) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 2.5 75 10000 10000 2nd line VDS - Drain-to-Source Voltage (V) ID = 5 A VGS = 10 V 1000 1.7 VGS = 4.5 V 1.3 100 0.9 0.5 1000 71 69 100 67 65 10 -50 -25 0 25 50 ID = 1 mA 73 1st line 2nd line 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 100 TJ = 150 C 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line TJ - Junction Temperature (C) 2nd line On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature Axis Title 1000 10000 IDM limited 100 s 1000 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 100 1 Limited by RDS(on) (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 0.1 TC = 25 C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S17-0665-Rev. A, 15-May-17 Document Number: 75504 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ262EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 85 C/W 0.02 3. TJM - TA = PDM ZthJA(t) Single pulse 4. Surface mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) is given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75504. S17-0665-Rev. A, 15-May-17 Document Number: 75504 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000