SQJ262EP
www.vishay.com Vishay Siliconix
S17-0665-Rev. A, 15-May-17 1Document Number: 75504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs
FEATURESS
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Optimized for synchronous buck applications
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
VDS (V) 60 60
RDS(on) (Ω) at VGS = 10 V 0.0355 0.0155
RDS(on) (Ω) at VGS = 4.5 V 0.0480 0.0200
ID (A) 15 40
Configuration Dual N
Package PowerPAK SO-8L Dual Asymmetric
PowerPAK® SO-8L Dual Asymmetric
Bottom View
2
G1
3
S2
4
G2
1
S1
D2
D1
Top View
1
6.15 mm
5.13 mm
1
6.1
5
m
m
5
13
m
m
N-Channel 1 MOSFET
D1
G1
S1
N-Channel 2 MOSFET
D2
G2
S2
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Drain-source voltage VDS 60 60 V
Gate-source voltage VGS ± 20
Continuous drain current TC = 25 °C ID
15 a40
A
TC = 125 °C 11 23
Continuous source current (diode conduction) IS15 a 44
Pulsed drain current bIDM 30 70
Single pulse avalanche current L = 0.1 mH IAS 12 20
Single pulse avalanche energy EAS 7.2 20 mJ
Maximum power dissipation bTC = 25 °C PD
27 48 W
TC = 125 °C 9 16
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Junction-to-ambient PCB mount cRthJA 85 85 °C/W
Junction-to-case (drain) RthJC 5.5 3.1
SQJ262EP
www.vishay.com Vishay Siliconix
S17-0665-Rev. A, 15-May-17 2Document Number: 75504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS
VGS = 0 V, ID = 250 μA N-Ch 1 60 - -
V
VGS = 0 V, ID = 250 μA N-Ch 2 60 - -
Gate-source threshold voltage VGS(th)
VDS = VGS, ID = 250 μA N-Ch 1 1.5 2.0 2.5
VDS = VGS, ID = 250 μA N-Ch 2 1.5 2.0 2.5
Gate-source leakage IGSS V
DS = 0 V, VGS = ± 20 V N-Ch 1 - - ± 100 nA
N-Ch 2 - - ± 100
Zero gate voltage drain current IDSS
VGS = 0 V VDS = 60 V N-Ch 1 - - 1
μA
VGS = 0 V VDS = 60 V N-Ch 2 - - 1
VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 1 - - 50
VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 2 - - 50
VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 1 - - 250
VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 2 - - 250
On-state drain current a I
D(on) VGS = 10 V VDS ≥ 5 V N-Ch 1 10 - - A
VGS = 10 V VDS ≥ 5 V N-Ch 2 20 - -
Drain-source on-state resistance a R
DS(on)
VGS = 10 V ID = 2 A N-Ch 1 - 0.0295 0.0355
Ω
VGS = 10 V ID = 5 A N-Ch 2 - 0.0126 0.0155
VGS = 10 V ID = 2 A, TJ = 125 °C N-Ch 1 - - 0.0563
VGS = 10 V ID = 5 A, TJ = 125 °C N-Ch 2 - - 0.0253
VGS = 10 V ID = 2 A, TJ = 175 °C N-Ch 1 - - 0.0700
VGS = 10 V ID = 5 A, TJ = 175 °C N-Ch 2 - - 0.0311
VGS = 4.5 V ID = 1 A N-Ch 1 - 0.0400 0.0480
VGS = 4.5 V ID = 3 A N-Ch 2 - 0.0165 0.0200
Dynamic b
Input capacitance Ciss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 410 550
pF
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 967 1260
Output capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 212 280
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 436 570
Reverse transfer capacitance Crss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 15 20
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 18 25
Total gate charge c Qg VGS = 10 V VDS = 30 V, ID = 1 A N-Ch 1 - 6.5 10
nC
VGS = 10 V VDS = 30 V, ID = 2 A N-Ch 2 - 14.5 23
Gate-source charge c Qgs VGS = 10 V VDS = 30 V, ID = 1 A N-Ch 1 - 1.4 -
VGS = 10 V VDS = 30 V, ID = 2 A N-Ch 2 - 2.7 -
Gate-drain charge c Qgd VGS = 10 V VDS = 30 V, ID = 1 A N-Ch 1 - 0.9 -
VGS = 10 V VDS = 30 V, ID = 2 A N-Ch 2 - 2.1 -
Gate resistance Rg f = 1 MHz N-Ch 1 0.7 1.47 2.2 Ω
N-Ch 2 0.3 0.62 0.95
SQJ262EP
www.vishay.com Vishay Siliconix
S17-0665-Rev. A, 15-May-17 3Document Number: 75504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic b
Turn-on delay time c td(on)
VDD = 30 V, RL = 30 Ω,
ID ≅ 1 A, VGEN = 10 V, Rg = 1 ΩN-Ch 1 - 9 15
ns
VDD = 30 V, RL = 15 Ω,
ID ≅ 2 A, VGEN = 10 V, Rg = 1 ΩN-Ch 2 - 13 20
Rise time c tr
VDD = 30 V, RL = 30 Ω,
ID ≅ 1 A, VGEN = 10 V, Rg = 1 ΩN-Ch 1 - 3 5
VDD = 30 V, RL = 15 Ω,
ID ≅ 2 A, VGEN = 10 V, Rg = 1 ΩN-Ch 2 - 3 5
Turn-off delay time c td(off)
VDD = 30 V, RL = 30 Ω,
ID ≅ 1 A, VGEN = 10 V, Rg = 1 ΩN-Ch 1 - 15 25
VDD = 30 V, RL = 15 Ω,
ID ≅ 2 A, VGEN = 10 V, Rg = 1 ΩN-Ch 2 - 23 35
Fall time c tf
VDD = 30 V, RL = 30 Ω,
ID ≅ 1 A, VGEN = 10 V, Rg = 1 ΩN-Ch 1 - 10 15
VDD = 30 V, RL = 15 Ω,
ID ≅ 2 A, VGEN = 10 V, Rg = 1 ΩN-Ch 2 - 10 15
Source-Drain Diode Ratings and Characteristics b
Pulsed current a ISM
N-Ch 1 - - 30 A
N-Ch 2 - - 70
Forward voltage VSD
IF = 2 A, VGS = 0 V N-Ch 1 - 0.81 1.2 V
IF = 5 A, VGS = 0 V N-Ch 2 - 0.80 1.2
Body diode reverse recovery time trr
IF = 2 A, di/dt = 100 A/μs N-Ch 1 - 24 50 ns
IF = 3 A, di/dt = 100 A/μs N-Ch 2 - 36 75
Body diode reverse recovery charge Qrr
IF = 2 A, di/dt = 100 A/μs N-Ch 1 - 17 35 nC
IF = 3 A, di/dt = 100 A/μs N-Ch 2 - 30 60
Reverse recovery fall time ta
IF = 2 A, di/dt = 100 A/μs N-Ch 1 - 12 -
ns
IF = 3 A, di/dt = 100 A/μs N-Ch 2 - 19 -
Reverse recovery rise time tb
IF = 2 A, di/dt = 100 A/μs N-Ch 1 - 12 -
IF = 3 A, di/dt = 100 A/μs N-Ch 2 - 17 -
Body diode peak reverse recovery
current IRM(REC)
IF = 2 A, di/dt = 100 A/μs N-Ch 1 - -1.3 - A
IF = 3 A, di/dt = 100 A/μs N-Ch 2 - -1.6 -
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
SQJ262EP
www.vishay.com Vishay Siliconix
S17-0665-Rev. A, 15-May-17 4Document Number: 75504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Capacitance
Gate Charge
Source Drain Diode Forward Voltage
10
100
1000
10000
0
6
12
18
24
30
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 4 V
V
GS
= 3 V
10
100
1000
10000
0
5
10
15
20
25
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0.00
0.02
0.04
0.06
0.08
0.10
0 4 8 12 16 20
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 4.5 V
VGS = 10 V
10
100
1000
10000
0
120
240
360
480
600
0 1224364860
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
2
4
6
8
10
0246810
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 1 A
VDS = 30 V
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
SQJ262EP
www.vishay.com Vishay Siliconix
S17-0665-Rev. A, 15-May-17 5Document Number: 75504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
10
100
1000
10000
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 5 mA
ID= 250 µA
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 2 A
VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0.00
0.04
0.08
0.12
0.16
0.20
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 150 °C
10
100
1000
10000
66
68
70
72
74
76
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
ID= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
IDlimited
SQJ262EP
www.vishay.com Vishay Siliconix
S17-0665-Rev. A, 15-May-17 6Document Number: 75504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
10-3 10-2 110 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = R
thJA
= 85 °C/W
3. T
JM -
T
A
= PDM
Z
th
JA(t
)
t
1
t
2
t
1
t
2
Notes:
4. Surface mounted
PDM
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
SQJ262EP
www.vishay.com Vishay Siliconix
S17-0665-Rev. A, 15-May-17 7Document Number: 75504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Capacitance
Gate Charge
Source Drain Diode Forward Voltage
10
100
1000
10000
0
18
36
54
72
90
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 5V
VGS = 4 V
VGS = 3 V
10
100
1000
10000
0
12
24
36
48
60
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0.00
0.01
0.02
0.03
0.04
0.05
0 1224364860
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 4.5 V
VGS = 10 V
10
100
1000
10000
0
300
600
900
1200
1500
0 1224364860
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
2
4
6
8
10
03691215
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 2 A
VDS = 30 V
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
SQJ262EP
www.vishay.com Vishay Siliconix
S17-0665-Rev. A, 15-May-17 8Document Number: 75504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
10
100
1000
10000
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 5 mA
ID= 250 µA
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 5 A
VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0.00
0.02
0.04
0.06
0.08
0.10
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
10
100
1000
10000
65
67
69
71
73
75
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
I
D
= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
SQJ262EP
www.vishay.com Vishay Siliconix
S17-0665-Rev. A, 15-May-17 9Document Number: 75504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75504.
10-3 10-2 110600
10-1
10 -4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = R
thJA
= 85 °C/W
3. T
JM -
T
A
= PDM
Z
th
JA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface mounted
PDM
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
