HAL115UA-E - Micronas Semiconductor

HAL114, HAL115

Hall Effect Sensor Family

Edition Dec. 20, 1999

6251-456-2DS

MICRONAS

HAL11x

2 Micronas

Contents

Page Section Title

3 1. Introduction

3 1.1. Features

3 1.2. Family Overview

3 1.3. Marking Code

4 1.4. Operating Junction Temperature Range

4 1.5. Hall Sensor Package Codes

4 1.6. Solderability

4 2. Functional Description

5 3. Specifications

5 3.1. Outline Dimensions

5 3.2. Dimensions of Sensitive Area

5 3.3. Positions of Sensitive Areas

6 3.4. Absolute Maximum Ratings

6 3.5. Recommended Operating Conditions

7 3.6. Electrical Characteristics

8 3.7. Magnetic Characteristics

10 4. Type Descriptions

10 4.1. HAL114

12 4.2. HAL115

14 5. Application Notes

14 5.1. Application Circuit

14 5.2. Ambient Temperature

14 5.3. Extended Operating Conditions

14 5.4. Start-up Behavior

16 6. Data Sheet History

HAL11x

3Micronas

Hall Effect Sensor Family

in CMOS technology

Release Notes: Revision bars indicate significant

changes to the previous edition.

1. Introduction

The HAL 11x family consists of different Hall switches

produced in CMOS technology.

All sensors include a temperature-compensated Hall

plate, a comparator, and an open-drain output transistor.

The comparator compares the actual magnetic flux

through the Hall plate (Hall voltage) with the fixed refer-

ence values (switching points). Accordingly, the output

transistor is switched on or off. The sensors of this family

differ in the switching behavior.

The sensors are designed for industrial and automotive

applications and operate with supply voltages from

4.5 V to 24 V in the ambient temperature range from

–40 °C up to 125 °C.

All sensors are available in an SMD-package (SOT-89B)

and in a leaded version (TO-92UA).

1.1. Features

– operates from 4.5 V to 24 V supply voltage

– overvoltage protection

– reverse-voltage protection at VDD-pin

– short-circuit protected open-drain output by thermal

shut down

– operates with static magnetic fields and dynamic mag-

netic fields up to 20 kHz

– stable switching points over a wide supply voltage

range

– the decrease of magnetic flux density caused by rising

temperature in the sensor system is compensated by

a built-in negative temperature coefficient of the mag-

netic characteristics

1.2. Family Overview

The types differ according to the mode of switching.

Type Switching Behavior see Page

HAL114 unipolar 10

HAL115 bipolar 12

Bipolar Switching Sensors:

The output turns low with the magnetic south pole on the

branded side of the package and turns high with the

magnetic north pole on the branded side. The output

state is not defined for all sensors if the magnetic field is

removed again. Some sensors will change the output

state and some sensors will not.

Unipolar Switching Sensors:

The output turns low with the magnetic south pole on the

branded side of the package and turns high if the mag-

netic field is removed. The sensor does not respond to

the magnetic north pole on the branded side.

1.3. Marking Code

All Hall sensors have a marking on the package surface

(branded side). This marking includes the name of the

sensor and the temperature range.

Type Temperature Range

K E C

HAL114 114K 114E 114C

HAL115 115K 115E 115C

HAL11x

4 Micronas

1.4. Operating Junction Temperature Range

The Hall sensors from Micronas are specified to the chip

temperature (junction temperature TJ).

K: TJ = –40 °C to +140 °C

E: TJ = –40 °C to +100 °C

C: TJ = 0 °C to +100 °C

The relationship between ambient temperature (TA) and

junction temperature is explained in section 5.2. on page

14.

1.5. Hall Sensor Package Codes

Type: 11x

HALXXXPA-T Temperature Range: K, E, or C

Package: SF for SOT-89B

UA for TO-92UA

(SO for SOT-89A)

→ Type: 114

→ Package: TO-92UA

→ Temperature Range: TJ = –40 °C to +100 °C

Example: HAL114UA-E

Hall sensors are available in a wide variety of packaging

versions and quantities. For more detailed information,

please refer to the brochure: “Ordering Codes for Hall

Sensors”.

1.6. Solderability

all packages: according to IEC68-2-58

During soldering reflow processing and manual

reworking, a component body temperature of 260 °C

should not be exceeded.

Components stored in the original packaging should

provide a shelf life of at least 12 months, starting from the

date code printed on the labels, even in environments as

extreme as 40 °C and 90% relative humidity.

OUT

GND

1VDD

Fig. 1–1: Pin configuration

2. Functional Description

The HAL11x sensors are monolithic integrated circuits

which switch in response to magnetic fields. If a

magnetic field with flux lines perpendicular to the

sensitive area is applied to the sensor, the biased Hall

plate forces a Hall voltage proportional to this field. The

Hall voltage is compared with the actual threshold level

in the comparator. The temperature-dependent bias

increases the supply voltage of the Hall plates and

adjusts the switching points to the decreasing induction

of magnets at higher temperatures. If the magnetic field

exceeds the threshold levels, the open drain output

switches to the appropriate state. The built-in hysteresis

eliminates oscillation and provides switching behavior of

output without bouncing.

Shunt protection devices clamp voltage peaks at the

Output-pin and VDD-pin together with external series

resistors. Reverse current is limited at the VDD-pin by an

internal series resistor up to –15 V. No external reverse

protection diode is needed at the VDD-pin for reverse

voltages ranging from 0 V to –15 V.

Temperature

Dependent

Bias Hysteresis

Control

Comparator Output

VDD

OUT

Hall Plate

Fig. 2–1: HAL11x block diagram

HAL11x

Short Circuit &

Overvoltage

Protection

Reverse

Voltage &

Overvoltage

Protection

HAL11x

5Micronas

3. Specifications

3.1. Outline Dimensions

Fig. 3–1:

Plastic Small Outline Transistor Package

(SOT-89A)

Weight approximately 0.04 g

Dimensions in mm

min.

0.25

4.55±0.1

2.6±0.1

0.40.4

1.7

0.4

1.5

3.0

0.06±0.04

branded side

SPGS7001-7-A3/2E

sensitive area

top view

123

4±0.2

1.53±0.05

0.125

0.7

x1 x2

Note: The SOT-89A package will be discontinued in

2000 and be replaced by the SOT-89B package.

Fig. 3–2:

Plastic Small Outline Transistor Package

(SOT-89B)

Weight approximately 0.035 g

Dimensions in mm

min.

0.25

2.55±0.1

0.40.4

0.4

1.5

3.0

0.06±0.04

branded side

SPGS0022-3-A3/2E

sensitive area

top view

123

4±0.2

1.15±0.05

0.125

0.3

4.55±0.1

1.7

x1 x2

0.75±0.2

Fig. 3–3:

Plastic Transistor Single Outline Package

(TO-92UA)

Weight approximately 0.12 g

Dimensions in mm

sensitive area

0.55

branded side

0.36

0.8

0.3

45°

14.0

min.

1.271.27

(2.54)

123

0.42

1.5±0.05 4.06±0.1

3.05±0.1

0.48

SPGS7002-7-A/2E

3.1±0.2

x2x1

Note: For all package diagrams, a mechanical tolerance

of ±50 µm applies to all dimensions where no tolerance

is explicitly given.

3.2. Dimensions of Sensitive Area

0.4 mm x 0.2 mm

3.3. Positions of Sensitive Areas

SOT-89A SOT-89B TO-92UA

|x2 – x1| / 2 < 0.2 mm

y = 0.98 mm

± 0.2 mm y = 0.95 mm

± 0.2 mm y = 1.0 mm

± 0.2 mm

HAL11x

6 Micronas

3.4. Absolute Maximum Ratings

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1–15 281) V

–VPTest Voltage for Supply 1–242) –V

–IDD Reverse Supply Current 1–501) mA

IDDZ, IOZ Current through Protection Devices 1 or 3 –2003) 2003) mA

VOOutput Voltage 3–0.3 281) V

IOContinuous Output On Current 3–301) mA

IOmax Peak Output On Current 3–2503) mA

TSStorage Temperature Range –65 150 °C

TJJunction Temperature Range –40 150 °C

1) as long as TJmax is not exceeded

2) with a 220 Ω series resistor at pin 1

3) t<2 ms

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only . Functional operation of the device at these or any other conditions beyond those indicated in the

“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-

mum ratings conditions for extended periods may affect device reliability.

3.5. Recommended Operating Conditions

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1 4.5 24 V

IOContinuous Output On Current 3 0 20 mA

VOOutput Voltage

(output switched off) 3 0 24 V

RVSeries Resistor1) 1 270 Ω

1) see Fig. 5–1 on page 14

HAL11x

7Micronas

3.6. Electrical Characteristics at TJ = –40 °C to +140 °C , VDD = 4.5 V to 24 V , as not otherwise specified in Conditions

Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

IDD Supply Current 1 6 8.2 11 mA TJ= 25 °C

IDD Supply Current over

Temperature Range 1 3.9 8.2 12 mA

VOL Output Voltage over

Temperature Range 3–120 400 mV IOL = 12.5 mA

VOL Output Voltage over

Temperature Range 3–190 500 mV IOL = 20 mA

IOH Output Leakage Current 3–0.06 1 µAB < Boff,

TJ = 25 °C, VOH = 0 to 24 V

IOH Output Leakage Current over

Temperature Range 3– – 10 µAB < Boff,

VOH = 0 to 24V

ten(O) Enable Time of Output after

Setting of VDD 1–6 10 µs VDD = 12 V

B > BON + 2 mT or

B < BOFF – 2 mT

trOutput Rise T ime 3–0.08 0.4 µs VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

tfOutput Fall T ime 3–0.06 0.4 µs VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

RthJSB

case

SOT-89A

SOT-89B

Thermal Resistance Junction

to Substrate Backside – – 150 200 K/W Fiberglass Substrate

30 mm x 10 mm x 1.5mm,

pad size see Fig. 3–4

RthJA

case

TO-92UA

Thermal Resistance Junction

to Soldering Point – – 150 200 K/W

Fig. 3–4: Recommended pad size SOT-89x

Dimensions in mm

5.0

2.0

1.0

HAL11x

8 Micronas

3.7. Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 4.5 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.

Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit

Switching type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.

HAL114 –40 °C 7.5 21.5 36 4.3 17.4 33.2 2.8 4.1 5 mT

unipolar 25 °C 7 21.1 34 4 17.1 31.2 2.8 4 4.5 mT

140 °C 6.1 19.4 31.3 3.6 16.1 28.8 2.2 3.3 4 mT

HAL115 –40 °C–10.7 1.4 12.5 –12.5 –1.4 10.7 1.8 2.8 7 mT

bipolar 25 °C–10.7 1.2 12.5 –12.5 –1.2 10.7 1.8 2.4 7 mT

140 °C–10.7 0.9 12.5 –12.5 –0.9 10.7 1 1.8 7 mT

Note: For detailed descriptions of the individual types, see pages 10 and following.

The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas

on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching

points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates

can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering

or operating the parts at extreme temperatures.

Please use a sensor of the HAL5xx family if higher robustness against mechanical stress is required.

–15

–10

–5

–15 –10 –5 0 5 1015202530

VDD

IDD

Fig. 3–5: Typical supply current

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 140 °C

HAL11x

0123456

VDD

IDD

Fig. 3–6: Typical supply current

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 140 °C

HAL11x

9Micronas

–50 0 50 100 150 °C

IDD

VDD = 24 V

VDD = 4.5 V

Fig. 3–7: Typical supply current

versus temperature

HAL11x

100

200

300

400

500

0 5 10 15 20 25 30 V

VDD

VOL

IO = 12.5 mA

Fig. 3–8: Typical output low voltage

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 140 °C

HAL11x

100

200

300

400

500

–50 0 50 100 150

VOL

IO = 12.5 mA

IO = 20 mA

°C

VDD = 12 V

Fig. 3–9: Typical output low voltage

versus temperature

HAL11x

–50 0 50 100 150

µA

IOH

°C

100

10–1

10–2

10–3

10–4

101

102

VOH = 24 V

VDD = 5 V

Fig. 3–10: Typical output leakage current

versus temperature

HAL11x

HAL114

10 Micronas

4. Type Description

4.1. HAL114

The HAL114 is a unipolar switching sensor (see

Fig. 4–1).

The output turns low with the magnetic south pole on the

branded side of the package and turns high if the mag-

netic field is removed. The sensor does not respond to

the magnetic north pole on the branded side.

For correct functioning in the application, the sensor re-

quires only the magnetic south pole on the branded side

of the package.

Magnetic Features:

–switching type: unipolar

–typical BON: 21.1 mT at room temperature

–typical BOFF: 17.1 mT at room temperature

–operates with static magnetic fields and dynamic mag-

netic fields up to 20 kHz

Applications

The HAL114 is the optimal sensor for applications with

one magnetic polarity such as:

–solid state switches,

–contactless solution to replace micro switches,

–position and end-point detection, and

–rotating speed measurement.

BHYS

Output Voltage

Fig. 4–1: Definition of magnetic switching points for

the HAL114

OFF BON

VOL

Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 4.5 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point BON Off point BOFF Hysteresis BHYS Unit

TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.

–40 °C 7.5 21.5 36 4.3 17.4 33.2 2.8 4.1 5 mT

25 °C 7 21.1 34 4 17.1 31.2 2.8 4 4.5 mT

100 °C 6.3 19.9 31.5 3.6 16.4 28.9 2.6 3.5 4 mT

140 °C 6.1 19.4 31.3 3.6 16.1 28.8 2.2 3.3 4 mT

The hysteresis is the difference between the switching points BHYS = BON – BOFF

The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas

on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching

points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates

can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering

or operating the parts at extreme temperatures.

Please use a sensor of the HAL 5xx family if a robustness against mechanical stress is required.

HAL114

11Micronas

0 5 10 15 20 25 30

VDD

BON

BOFF

Fig. 4–2: Typical magnetic switching

points versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 140 °C

HAL114

3456

VDD

BON

BOFF

Fig. 4–3: Typical magnetic switching

points versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 140 °C

HAL114

–50 0 50 100 150

BOFF

BON

BOFF

BON

VDD = 12 V

°C

Fig. 4–4: Typical magnetic switching

points versus temperature

HAL114

HAL115

12 Micronas

4.2. HAL115

The HAL115 is a bipolar switching sensor (see Fig. 4–5).

The output turns low with the magnetic south pole on the

branded side of the package and turns high with the

magnetic north pole on the branded side. The output

state is not defined for all sensors if the magnetic field is

removed again. Some sensors will change the output

state and some sensors will not.

For correct functioning in the application, the sensor re-

quires both magnetic polarities (north and south) on the

branded side of the package.

Magnetic Features:

–switching type: bipolar

–high sensitivity

–typical BON: 1.2 mT at room temperature

–typical BOFF: –1.2 mT at room temperature

–operates with static magnetic fields and dynamic mag-

netic fields up to 20 kHz

Applications

The HAL 115 is the optimal sensor for all applications

with alternating magnetic signals at the sensor position

such as:

–rotating speed measurement,

–commutation of brushless DC-motors and cooling

fans.

Fig. 4–5:Definition of magnetic switching points for the

HAL115

BHYS

Output Voltage

0BOFF BON

VOL

Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 4.5 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point BON Off point BOFF Hysteresis BHYS Unit

TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.

–40 °C–10.7 1.4 12.5 –12.5 –1.4 10.7 1.8 2.8 7 mT

25 °C–10.7 1.2 12.5 –12.5 –1.2 10.7 1.8 2.4 7 mT

100 °C–10.7 1 12.5 –12.5 –1 10.7 1.5 2 7 mT

140 °C–10.7 0.9 12.5 –12.5 –0.9 10.7 1 1.8 7 mT

The hysteresis is the difference between the switching points BHYS = BON – BOFF

The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas

on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching

points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates

can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering

or operating the parts at extreme temperatures.

Please use a sensor of the HAL5xx family if higher robustness against mechanical stress is required.

HAL115

13Micronas

–6

–4

–2

–50 0 50 100 150

BOFF

BON,

BOFF

°C

BON

VDD = 12 V

HAL115

Fig. 4–6:Typical magnetic switching

points versus ambient temperature

HAL11x

14 Micronas

5. Application Notes

5.1. Application Circuit

The HAL1 1x sensors can operate without external com-

ponents. For applications with disturbances on the sup-

ply line or radiated disturbances, a series resistor and a

capacitor are recommended (see Fig. 5–1).

The series resistor and the capacitor should be placed

as closely as possible to the sensor.

OUT

GND

4.7 nF

VDD

220 Ω

Fig. 5–1: Recommended application circuit

HAL115

3.3 k R1

3.3 k

C1C2

2.2 µ/50 V 2.2 µ

/50 V

VDD

Fig. 5–2: Recommended application circuit

for DC fans

5.2. Ambient Temperature

Due to the internal power dissipation, the temperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient tem-

perature TA).

TJ = TA + ∆T

At static conditions, the following equation is valid:

∆T = IDD * VDD * Rth

For typical values, use the typical parameters. For worst

case calculation, use the max. parameters for IDD and

Rth, and the max. value for VDD from the application.

For all sensors, the junction temperature range TJ is

specified. The maximum ambient temperature TAmax

can be calculated as:

TAmax = TJmax – ∆T

5.3. Extended Operating Conditions

All sensors fulfill the electrical and magnetic characteris-

tics when operated within the Recommended Operating

Conditions (see page 6).

Please use the sensors of the HAL 5xx family if lower op-

eration voltage, lower current consumption or tighter

magnetic specifications required.

5.4. Start-up Behavior

The sensors have an initialization time (enable time

ten(O)) after applying the supply voltage. This parameter

ten(O) is specified in the Electrical Characteristics (see

page 7).

During the initialization time, the output state is not de-

fined and can toggle. After ten(O), the output will be low

if the applied magnetic field B is above BON or high if B

is below BOFF.

For magnetic fields between BOFF and BON, the output

state of the HAL sensor after applying VDD will be either

low or high. In order to achieve a well-defined output

state, the applied magnetic field must be above BONmax,

respectively, below BOFFmin.

HAL11x

15Micronas

HAL11x

16 Micronas

6. Data Sheet History

1. Final data sheet: “HAL114 Unipolar Hall Switch IC”,

June 10, 1998, 6251-456-1DS. First release of the final

data sheet.

2. Final data sheet: “HAL115 Hall Effect Sensor IC”,

May 7, 1997, 6251-414-1DS. First release of the final

data sheet.

3. Final data sheet: “HAL114, HAL115 Hall Effect Sen-

sor Family, Dec. 20, 1999, 6251-456-2DS. Second re-

lease of the final data sheet. Major changes:

–additional package SOT-89B

–temperature range “A” replaced by “K” for HAL114

–additional temperature range “K” for HAL115

–outline dimensions for SOT-89A and TO-92UA

changed

–supply voltage range changed for HAL115

Micronas GmbH

Hans-Bunte-Strasse 19

D-79108 Freiburg (Germany)

P.O. Box 840

D-79008 Freiburg (Germany)

Tel. +49-761-517-0

Fax +49-761-517-2174

E-mail: docservice@micronas.com

Internet: www.micronas.com

Printed in Germany

by Systemdruck+V erlags-GmbH, Freiburg (12/1999)

Order No. 6251-456-2DS

All information and data contained in this data sheet are without any

commitment, are not to be considered as an offer for conclusion of a

contract, nor shall they be construed as to create any liability . Any new

issue of this data sheet invalidates previous issues. Product availability

and delivery are exclusively subject to our respective order confirma-

tion form; the same applies to orders based on development samples

delivered. By this publication, Micronas GmbH does not assume re-

sponsibility for patent infringements or other rights of third parties

which may result from its use.

Further, Micronas GmbH reserves the right to revise this publication

and to make changes to its content, at any time, without obligation to

notify any person or entity of such revisions or changes.

No part of this publication may be reproduced, photocopied, stored on

a retrieval system, or transmitted without the express written consent

of Micronas GmbH.