MMBTA42
NPN Silicon High
Voltage Transistor
SOT-23
Suggested Solder
Pad Layout
Features
• Surface Mount SOT-23 Package
• Capable of 300mWatts of Power Dissipation
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0) 300 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100µAdc, IE=0) 300 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100µAdc, IC=0) 6.0 Vdc
ICBO Collector Cutoff Current
(VCB=200Vdc, IE=0) 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=6.0Vdc, IC=0) 0.1 uAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=30mAdc, VCE=10Vdc)
25
40
40 ----
VCE(sat) Collector-Emitter Saturation Voltage
(IC=20mAdc, IB=2.0mAdc) 0.5 Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=20mAdc, IB=2.0mAdc) 0.9 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz) 50 MHz
Ccb Collector-Emitter Capacitance
(VCB=20Vdec, IE=0, f=1.0MHz) 3.0 pF
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
1 D
C
B E
Pin Configuration
Top View
K
A
B
C
D
E
F
G
H
J
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient RJA 556 °C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
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MMBTA42 MCC
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C, CAPACITANCE (pF)
Figure 1. DC Current Gain
VR, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10 1000
Ceb @ 1MHz
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA)
10070503020107.05.03.02.0
80
70
50
30
20
10
TJ = 25°C
VCE = 20 V
f = 20 MHz
f, CURRENT-GAIN BANDWIDTH (MHz)
T
1.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain – Bandwidth
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
100
1.0 Ccb @ 1MHz
60
40
VBE(on) @ 25°C, VCE = 10 V
VCE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
Figure 4. ”ON” Voltages
IC, COLLECTOR CURRENT (mA)
120
0.1 1.0 10
100
80
60
0
hFE, DC CURRENT GAIN
TJ = +125°C
25°C
-55°C
VCE = 10 Vdc
100
20
40
