DG2517E
www.vishay.com Vishay Siliconix
S17-0460-Rev. A, 03-Apr-17 1Document Number: 74518
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2.5 , High Bandwidth, Dual SPDT Analog Switch
DESCRIPTION
The DG2517E is low-voltage dual single-pole /
double-throw monolithic CMOS analog switches. Designed
to operate from 1.8 V to 5.5 V power supply, the DG2517E
achieves a bandwidth of 221 MHz while providing low
on-resistance (2.5 ), excellent on-resistance matching
(0.3 ) and flatness (1 ) over the entire signal range.
The DG2517E offers the advantage of high linearity that
reduces signal distortion, making ideal for audio, video, and
USB signal routing applications.
Built on Vishay Siliconix’s proprietary sub-micron
high-density process, the DG2517E brings low power
consumption at the same time as reduces PCB spacing with
the MSOP10 and DFN10 packages.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. The DFN
package has a nickel-palladium-gold device termination
and is represented by the lead (Pb)-free “-GE4” suffix. The
MSOP package uses 100 % matte Tin device termination
and is represented by the lead (Pb)- free “-GE3” suffix. Both
the matte Tin and nickel-palladium-gold device terminations
meet all JEDEC® standards for reflow and MSL ratings.
FEATURES
1.8 V to 5.5 V single supply operation
•Low R
ON: 2.5 at 4.5 V
221 MHz, -3 dB bandwidth
Low off-isolation, -58 dB at 1 MHz
+1.6 V logic compatible
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
High linearity
Low power consumption
High bandwidth
Full rail signal swing range
APPLICATIONS
USB / UART signal switching
Audio / video switching
•Cellular phone
Media players
•Modems
Hard drives
PCMCIA
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Notes
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 4 mW/°C above 70 °C
d. Derate 14.9 mW/°C above 70 °C
COM1
NC1
V+
1
2
3
10
9
Top View
IN1
NO1
GND 8
NC2
COM2
4
5
7
NO2
IN2 6
DG2517E
TRUTH TABLE
LOGIC NC1 AND NC2 NO1 AND NO2
0ONOFF
1OFF ON
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to 85 °C MSOP-10 DG2517EDQ-T1-GE3
DFN-10 DG2517EDN-T1-GE4
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
Reference to GND
V+ -0.3 to +6 V
IN, COM, NC, NO a-0.3 to (V+ + 0.3)
Continuous current (any terminal) ± 50 mA
Peak current (pulsed at 1 ms, 10 % duty cycle) ± 200
Storage temperature (D suffix) -65 to +150 °C
Power dissipation (packages) bMSOP-10 c320 mW
DFN-10 d1191
ESD / HBM EIA / JESD22-A114-A 7.5k V
ESD / CDM EIA / JESD22-C101-A 1.5k
Latch up JESD78 300 mA
DG2517E
www.vishay.com Vishay Siliconix
S17-0460-Rev. A, 03-Apr-17 2Document Number: 74518
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. VIN = V+ voltage to perform proper function
f. Crosstalk measured between channels
g. Guarantee by 5 V testing
SPECIFICATIONS (V+ = 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 3 V, ± 10 %, VINL = 0.4 V, VINH = 1.5 V e
TEMP.
a
LIMITS
-40 °C to +85 °C UNIT
MIN. cTYP. bMAX. c
Analog Switch
Analog signal range dVANALOG Full 0 - V+ V
Drain-source on-resistance RDS(on)
V+ = 1.8 V, VNC/NO = 0.4 V / V+, INC/NO = 8 mA Room - 7 11
Full - - 13
V+ = 2.7 V, VCOM = 0.8 V / 1.8 V, ICOM = 10 mA Room - 4.6 5.5
Full - - 6.5
On-resistance matching RDS(on) V+ = 2.7 V, VCOM = 0.8 V / 1.4 V / 1.8 V,
ICOM = 10 mA
Room - 0.02 0.3
Full - - 0.6
On-resistance flatness d, f Rflat(on)
Room - 0.62 1
Full - - 1.5
Off leakage current gINC/NO(off) V+ = 3.6 V, VNC/NO = 1 V / 3.2 V,
VCOM = 3.2 V / 1 V
Room -1 0.01 1
nA
Full -5 - 5
Channel-on leakage
current gICOM(on) V+ = 3.6 V, VCOM = VNC/NO = 1 V / 3.2 V Room -1 0.01 1
Full -5 - 5
Digital Control
Input current dIINL or IINH Full -1 - 1 μA
Input high voltage dVINH Full 1.5 - - V
Input low voltage dVINL Full - - 0.4
Digital input capacitance dCIN Room - 3 - pF
Dynamic Characteristics
Turn-on time tON
VNC/NO = 3 V, CL = 35 pf, RL = 300
Room - 19 45
ns
Full - - 50
Turn-off time tOFF
Room - 9 35
Full - - 45
Break-before-make time d t
BBM
Room 4 11 -
Full 3 - -
Charge injection dQINJ C
L = 1 nF, Vgen= 1.5 V, Rgen= 0 Room - -9 - pC
Bandwidth dBW CL = 5 pF (set up capacitance) Room - 226 - MHz
Off-isolation dOIRR RL = 50 , CL = 5 pF f = 1 MHz Room - -55 -
dB
f = 10 MHz Room - -42 -
Channel-to-channel crosstalk dXTALK R
L = 50 , CL = 5 pF f = 1 MHz Room - -61 -
f = 10 MHz Room - -44 -
NO, NC off capacitance dCNO(off)
V+ = 2.7 V, f = 1 MHz
Room - 7 -
pF
CNC(off) Room - 7 -
Channel-on capacitance d CNO(on) Room - 23 -
CNC(on) Room - 23 -
Power Supply
Power supply range V+ 2.7 - 3.3 V
Power supply current dI+ V+ = 2.7 V, VIN = 0 V or 2.7 V Full - - 1 μA
DG2517E
www.vishay.com Vishay Siliconix
S17-0460-Rev. A, 03-Apr-17 3Document Number: 74518
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. VIN = input voltage to perform proper function
f. Difference of min and max values
g. Guaranteed by 5 V testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 5 V, ± 10 %, VINL = 0.5 V, VINH = 2 V e
TEMP.
a
LIMITS
-40 °C to +85 °C UNIT
MIN. cTYP. bMAX. c
Analog Switch
Analog signal ranged VANALOG Full 0 - V+ V
Drain-source on-resistance RDS(on) V+ = 4.5 V, VCOM = 0.8 V / 3.5 V; ICOM = 10 mA Room - 2.5 3.1
Full - - 4
On-resistance matching RDS(on) V+ = 4.5 V, VCOM = 0.8 V / 2.5 V / 3.5 V,
ICOM = 10 mA
Room - 0.01 0.4
Full - - 0.6
On-resistance flatness d, f Rflat(on) Room - 0.61 1
Full - - 1.5
Off leakage current gINC/NO(off) V+ = 5.5 V, VNC/NO = 1 V / 4.5 V,
VCOM = 4.5 V / 1 V
Room -2 0.15 2
nA
Full -10 - 10
Channel-on leakage current gICOM(on) V+ = 5.5 V, VCOM = VNC/NO = 1 V / 4.5 V Room -2 0.20 2
Full -10 - 10
Power down leakage dIPD
V+ = 0 V, VCOM = 5.5 V, NC/NO open Full - 0.01 5 μA
V+ = 0 V, VNC/NO = 5.5 V,
COM, open Full - 0.01 3 mA
Digital Control
Input current d I
INL or IINH Full -1 - 1 μA
Input high voltage d V
INH Full 2 - - V
Input low voltage dVINL Full - - 0.5
Digital input capacitance d CIN Room - 3 - pF
Dynamic Characteristics
Turn-on time tON
VNC/NO = 3 V, CL = 35 pf, RL = 300
Room - 13 40
ns
Full - - 43
Turn-off time tOFF
Room - 7 33
Full - - 35
Break-before-make time d t
BBM
Room 3 6 -
Full 2 - -
Propagation delay d tpd V+ = 5 V, no RLRoom - 380 - ps
Charge injection dQINJ C
L = 1 nF, Vgen = 2.5 V, Rgen = 0 Room - -19.4 - pC
Bandwidth dBW CL = 5 pF (set up capacitance) Room - 221 - MHz
Off-isolation dOIRR RL = 50 , CL = 5 pF f = 1 MHz Room - -58 -
dB
f = 10 MHz Room - -43 -
Channel-to-channel
crosstalk dXTALK R
L = 50 , CL = 5 pF f = 1 MHz Room - -62 -
f = 10 MHz Room - -47 -
NO, NC off capacitance dCNO(off)
V+ = 5 V, f = 1 MHz
Room - 7 -
pF
CNC(off) Room - 7 -
Channel-on capacitance d CNO(on) Room - 23 -
CNC(on) Room - 23 -
Power Supply
Power supply range V+ 4.5 - 5.5 V
Power supply current d I+ V+ = 5.5 V, VIN = 0 or 5.5 V Full - - 1 μA
DG2517E
www.vishay.com Vishay Siliconix
S17-0460-Rev. A, 03-Apr-17 4Document Number: 74518
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
RON vs. VCOM and Single Supply Voltage
RON vs. Analog Voltage and Temperature
RON vs. Analog Voltage and Temperature
Supply Current vs. Temperature
Positive Supply Current vs. Switching Frequency
Switching Time vs. Temperature
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
012345
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
V+ = +1.8 V
V+ = +2.7 V
V+ = +3.0 V
V+ = +4.5 V
V+ = +5.0 V
I
COM
= 10 mA
10
100
1000
10000
1
2
3
4
5
6
7
0 0.5 1 1.5 2 2.5 3
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +2.7 V
ICOM = 10 mA
10
100
1000
10000
0
1
2
3
4
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +4.5 V
ICOM = 10 mA
10
100
1000
10000
0
1
2
3
4
5
6
7
8
9
10
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (nA)
Temperature (°C)
2nd line
V+ = +2.7 V
V+ = +5.5 V
VIN = V+
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10 100 1000 10K 100K 1M 10M
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (μA)
V
IN
Switching Frequency (Hz)
2nd line
V+ = +5 V
V+ = +2.7 V
10
100
1000
10000
8
10
12
14
16
18
20
22
24
26
28
30
32
34
-50-25 0 255075100
Axis Title
1st line
2nd line
2nd line
tON(IN) , tOFF(IN) - Switching Time (ns)
Temperature (°C)
2nd line
V+ = +3 V, tON
V+ = +3 V, tOFF
V+ = +5 V, tON
V+ = +5 V, tOFF
DG2517E
www.vishay.com Vishay Siliconix
S17-0460-Rev. A, 03-Apr-17 5Document Number: 74518
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Switching Time vs. Temperature
Switching Threshold vs. Supply Voltage
Charge Injection vs. Source Voltage
Leakage Current vs. Temperature
Leakage Current vs. Temperature
Leakage Current vs. Analog Voltage
10
100
1000
10000
0
2
4
6
8
10
12
14
16
-50-25 0 255075100
Axis Title
1st line
2nd line
2nd line
tBBM - Switching Time (ns)
Temperature (°C)
2nd line
V+ = +5.0V
V+ = +3.0V
10
100
1000
10000
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
123456
Axis Title
1st line
2nd line
2nd line
VIN - Switching Threshold (V)
V+ - Supply Voltage (V)
2nd line
-40 °C to +85 °C
VIH =-40 °C
VIL = 85 °C
1st line
2nd line
10
100
1000
10000
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0
10.0
20.0
0123456
Axis Title
1st line
2nd line
2nd line
QINJ - Charge Injection (pC)
VNC/NO - Analog Voltage (V)
2nd line
V+ = 5 V
V+ = 3 V
V+ = 1.8 V
10
100
1000
10000
-5000
-3000
-1000
1000
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
Temperature (°C)
2nd line
INC/NO(OFF), VCOM = 1 V,
VNC/NO = 4.5 V
V+ = +5.5 V
ICOM(OFF), VCOM = 4.5 V,
VNC/NO = 1 V
ICOM(ON), VCOM/NC/NO = 4.5 V
INC/NO(OFF), VCOM = 4.5 V, VNC/NO = 1 V
ICOM(ON), VCOM/NC/NO = 1 V
ICOM(OFF), VCOM = 1 V, VNC/NO = 4.5 V
10
100
1000
10000
-800
-600
-400
-200
0
200
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
Temperature (°C)
2nd line
,
V+ = +3.6 V
INC/NO(OFF), VCOM = 3.2 V, VNC/NO = 1 V
ICOM(OFF), VCOM = 3.2 V, VNC/NO = 1 V
ICOM(ON), VCOM/NC/NO = 3.2 V
INC/NO(OFF), VCOM = 1 V, VNC/NO = 3.2 V
ICOM(ON), VCOM/NC/NO = 1 V
ICOM(OFF), VCOM = 1 V, VNC/NO = 3.2 V
-4000
-3500
-3000
-2500
-2000
-1500
-1000
-500
0
500
1000
0123456
Leakage Current (pA)
VCOM - Analog Voltage (V)
INC/NO(off)
ICOM(on)
V+ = +5.5 V
DG2517E
www.vishay.com Vishay Siliconix
S17-0460-Rev. A, 03-Apr-17 6Document Number: 74518
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Loss, OIRR, XTALK vs. Frequency
TEST CIRCUITS
Fig. 1 - Switching Time
Fig. 2 - Break-Before-Make Interval
10
100
1000
10000
-80
-70
-60
-50
-40
-30
-20
-10
0
10
100K 1M 10M 100M 1G
Axis Title
1st line
2nd line
2nd line
Loss, OIRR, XTALK (dB)
Frequency (Hz)
2nd line
OIRR
V+ = +5 V
Loss
XTALK
Switch
Input
CL (includes fixture and stray capacitance)
V+
IN
NO or NC
CL
35 pF
COM
Logic
Input
RL
300 Ω
VOUT
GND
V+
50 %
0 V
Logic
Input
Switch
Output
tON tOFF
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
0 V
Switch Output
VOUT VCOM
RL
RLRON
0.9 x VOUT
tr < 5 ns
tf < 5 ns
VINH
VINL
CL (includes fixture and stray capacitance)
NC
VNO
NO
VNC
0 V
Logic
Input
Switch
Output
VO
VNC = VNO
tr < 5 ns
tf < 5 ns
90 %
tDtD
IN
COM
V+
GND
V+
CL
35 pF
VO
RL
300 Ω
VINL
VINH
DG2517E
www.vishay.com Vishay Siliconix
S17-0460-Rev. A, 03-Apr-17 7Document Number: 74518
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
Fig. 3 - Charge Injection
Fig. 4 - Off-Isolation Fig. 5 - Channel Off/On Capacitance
Fig. 6 - Source / Drain Power Down Leakage
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74518.
Off OnOn
IN
ΔVOUT
VOUT
Q = ΔVOUT x CL
CL = 1 nF
Rgen
VOUT
COM
VIN = 0 - V+
IN
Vgen
GND
V+
V+
IN depends on switch configuration: input polarity
determined by sense of switch.
+
NC or NO
IN
GND
NC or NO
0 V, 2.0 V
10 nF
COM
Off Isolation = 20 log
V
COM
V
NO NC
R
L
Analyzer
V+
V+
COM
NC or NO
f = 1 MHz
IN
COM
GND
0 V, 2.0 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
10 nF
V+
V+
+
-
5.5 V A
IN
NC, NO, Sx
V+
V+
GND
COM
+
-
5.5 V
A
IN
NC, NO, Sx
V+
V+
GND
COM
NOTES:
1. Die thickness allowable is 0.203"0.0127.
2. Dimensioning and tolerances per ANSI.Y14.5M-1994.
3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are
measured at Datum plane -H- , mold flash or protrusions shall not exceed
0.15 mm per side.
4. Dimension is the length of terminal for soldering to a substrate.
5. Terminal positions are shown for reference only.
6. Formed leads shall be planar with respect to one another within 0.10 mm at
seating plane.
7. The lead width dimension does not include Dambar protrusion. Allowable
Dambar protrusion shall be 0.08 mm total in excess of the lead width
dimension at maximum material condition. Dambar cannot be located on the
lower radius or the lead foot. Minimum space between protrusions and an
adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”.
8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip.
9. Controlling dimension: millimeters.
10. This part is compliant with JEDEC registration MO-187, variation AA and BA.
11. Datums -A- and -B- to be determined Datum plane -H- .
12. Exposed pad area in bottom side is the same as teh leadframe pad size.
5
N N-1 A B C 0.20
(N/2) Tips)
2X
N/221
0.60
0.50
0.60
E
Top V iew
e
See Detail “B”
-H-
3
D-A-
Seating Plane
A1
A
6
C0.10
Side View
0.25
BSC
T4
L-C-
Seating Plane
0.07 R. Min
2 Places
Parting Line
Detail “A”
(Scale: 30/1)
0.48 Max
Detail “B”
(Scale: 30/1)
Dambar Protrusion
7
C0.08 MBSAS
b
b1
With Plating
Base Metal
c1c
Section “C-C”
Scale: 100/1
(See Note 8)
See Detail “A”
A20.05 S
C
C
ς
3
E1-B-
End View
e1
0.95
Package Information
Vishay Siliconix
Document Number: 71245
12-Jul-02 www.vishay.com
1
MSOP: 10−LEADS
JEDEC Part Number: MO-187, (Variation AA and BA)
N = 10L
MILLIMETERS
Dim Min Nom Max Note
A- - 1.10
A10.05 0.10 0.15
A20.75 0.85 0.95
b0.17 - 0.27 8
b10.17 0.20 0.23 8
c0.13 - 0.23
c10.13 0.15 0.18
D3.00 BS C 3
E4.90 BSC
E12.90 3.00 3.10 3
e0.50 BSC
e12.00 BSC
L0.40 0.55 0.70 4
N10 5
T0_4_6_
ECN: T-02080—Rev. C, 15-Jul-02
DWG: 5867
BOTTOM VIEW
NOTES:
1. All dimensions are in millimeters and inches.
2. N is the total number of terminals.
3. Dimension b applies to metallized terminal and is measured
between 0.15 and 0.30 mm from terminal tip.
4. Coplanarity applies to the exposed heat sink slug as well as the
terminal.
5. The pin #1 identifier may be either a mold or marked feature, it
must be located within the zone iindicated.
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
E
D
D/2
E/2
TOP VIEW
SEATING
PLANE
A3A1
A
SIDE VIEW
C0.08
C0.10//
4NX
3Terminal Tip
e
3
C0.10 MA B
NXb
E2
Exposed Pad
NXL
D2
Index Area
D/2 E/2
5
Index Area
D/2 E/2
5C0.15 2x
C0.15 2x
Package Information
Vishay Siliconix
Document Number: 73181
29-Nov-04 www.vishay.com
1
DFN-10 LEAD (3 X 3)
MILLIMETERS INCHES
Dim Min Nom Max Min Nom Max
A0.80 0.90 1.00 0.031 0.035 0.039
A1 0.00 0.02 0.05 0.000 0.001 0.002
A3 0.20 BS C 0.008 BSC
b0.18 0.23 0.30 0.007 0.009 0.012
D3.00 BSC 0.118 BSC
D2 2.20 2.38 2.48 0.087 0.094 0.098
E3.00 BSC 0.118 BSC
E2 1.49 1.64 1.74 0.059 0.065 0.069
e0.50 BSC 0.020 BSC
L0.30 0.40 0.50 0.012 0.016 0.020
*Use millimeters as the primary measurement.
ECN: S-42134—Rev. A, 29-Nov-04
DWG: 5943
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Revision: 08-Feb-17 1Document Number: 91000
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