HITACHI 2SD1603, 2SD1604 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB1103 AND 2$B1104 (2.7 max. mo 1. Base 2, Collector (Flange) 3. Emitter TR EOS (Dimensions in mm) (JEDEC TO-220 AB) @ ABSOLUTE MAXIMUM RATINGS (Ta=25C) MAXIMUM COLLECTOR DISSIPATION ee _ ee - CURVE Item Symbol | 2SD1603 28D 1604 Unit Collector to base voltage VcBO 60) 80 v = Collector to emitter voltage | Vcro 60 | 80 v Emitter to base voltage VEBO 7 7 v 2 Collector current Ic i 8 8 A 3 PS Collector peak current iC(peak) | 12 12 A zg NN Collector power dissipation | Pc* 40 40 Ww 3 SN Junction temperature Ti 150 150 C 5 Storage temperature Tsg | -55 to +150 |-55 to +150 C | INQ a * _ 0 50 10 150 C10 E diode forward current| Ip" | a sj A Case rrperature TEC) * Value at Tc = 25C. @ ELECTRICAL CHARACTERISTICS (Ta=25C) 2SD1603 | 2SD1604 | Item Symbol Test Condition | Tw oo Unit min. | typ. | max. |min. | typ. |max, ee - - $n _ a a a ee }___ { . Collector to emitter breakdown voltage | WiBRiCEO | IC = 25mA, RBE = oe 60 | => 80 | ~-| | a Emitter to base breakdown voltage Viprjepo [TE = 50mA, Ic =0 i el Tl o] = -| Vo IcBo Vcr = 60V, ln =0 | |}| 00}; |] ) 100] WA Collector cutoff current + -- t + ~ _ IcEO Ves = 50V, Rae = j= /|; 0) 10 | HAL DC current transfer ratio hee Vce=3, Ic = 4A" _ 1000 | 20000 1000 [20000 | - ; Venison) [lo=4A, In = 8mA ) /| 1s} ) ] 15) Collector to emitter saturation voltage |- - , > ] oo oT oH | Vce(san2 | Ic = 8A, In = 80mA {, | 30) | ) 3.0 | vO |Vagisanl [Ic = 4A, Ib = 8mA* | | 20} |] | 20] v Base to emitter saturation voltage i op ps en es | Vaesan? jie = 8A, In = 80mA ; 7} 35} j] | 35 C to E diode forward voltage /Vp Ip =8A | | 30] | ] 30] vo Turn on | ton =| 05) / =| OF] |) ps Storage time tstg Ic = 4A, Int =Ip2 = 8mA | 5.0 | ) 50) = Fall time | te oT _ 10 _ 100 * Pulse Test. HITACHI AREA OF SAFE OPERATION IC ipeeas HS fe (max. we > Collector current Te (At Ol 0g i 10 0 ld Collector to emitler vollage Vee (V) DC CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT W100 10,000 3,000 DC current wransfer ratio bre ot 0.3 1 3 Collector current Te (A) SWITCHING TIME VS. COLLECTOR CURRENT 0 a Zz WwW 3 2 Soa es = 30 uw we m5 Veo= te = LT = = Rae 1h] ad aa Lat a Collector current: Ic (A) 3K) ih Collector to emitter saturation vollage Veer 2SD1603, 28D 1604 TYPICAL OUTPUT CHARACTERISTICS 10 a 3 & = 6 = o 5 3 8 3 4 = & C a 1 ? 3 4 5 Collector to emitter vollage Vee (} SATURATION VOLTAGE VS. COLLECTOR CURRENT 03 0.1 0.09 Base to emitter saturation voltage Wats V) O01 Ol a3 in 4 10 Callector current be (Ay TRANSIENT THERMAL RESISTANCE 10 1a 0.3 Thermal resistance 6). CCAW) 0.03 Oh } Ta 10 LAOS 4 ' t } 10 i) 16000 ms 4