Sep.2000
G1 E1 G2G2
E2
E1
G1
E2
G2
C1
C2E1
A
GF
CM
V
2 - Mounting
Holes
(6.5 Dia.)
E
U
H
E2 C1C2E1
C
3-M5 Nuts
D
B
J
K
L
N
M
P PQ
O
O
T
C
Measured
Point
R
S
T
TAB#110 t=0.5
Dimensions Inches Millimeters
A 3.7 94.0
B 3.15±0.01 80.0±0.25
C 1.89 48.0
D 0.94 24.0
E 0.28 7.0
F 0.67 17.0
G 0.91 23.0
H 0.91 23.0
J 0.43 11.0
K 0.71 18.0
L 0.16 4.0
Dimensions Inches Millimeters
M 0.47 12.0
N 0.53 13.5
O 0.1 2.5
P 0.63 16.0
Q 0.98 25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S 0.3 7.5
T 0.83 21.2
U 0.16 4.0
V 0.51 13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
er y free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-24H is a
1200V (VCES), 100 Ampere Dual
IGBT Module.
Current Rating VCES
Typ e Amperes Volts (x 50)
CM 100 24
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM100DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.2000
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol Ratings Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC100 Amperes
Peak Collector Current ICM 200* Amperes
Emitter Current** (Tc = 25°C) IE100 Amperes
Peak Emitter Current** IEM 200* Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc650 Watts
Mounting Torque, M5 Main Terminal – 2.5~3.5 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 100A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge QGVCC = 600V, IC = 100A, VGE = 15V – 375 – nC
Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – 3.2 Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies ––15nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 5 nF
Reverse Transfer Capacitance Cres ––3nF
Resistive Tur n-on Delay Time td(on) VCC = 600V, IC = 100A, – – 100 ns
Load Rise Time trVGE1 = VGE2 = 15V, – – 200 ns
Switch Tur n-off Delay Time td(off) RG = 3.1Ω, Resistive – – 300 ns
Times Fall Time tfLoad Switching Operation – – 350 ns
Diode Reverse Recovery Time** trr IE = 100A, diE/dt = -200A/µs – – 300 ns
Diode Reverse Recovery Charge** Qrr IE = 100A, diE/dt = -200A/µs – 0.55 – µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.19 °C/W
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.35 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W
MITSUBISHI IGBT MODULES
CM100DU-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Sep.2000
MITSUBISHI IGBT MODULES
CM100DU-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
120
40
0
V
GE
= 20V
20
12
11
8
T
j
= 25
o
C
80
160
200
10
9
15
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
048121620
160
120
80
40
0
200
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 40 80 120 160
4
3
2
1
0200
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
T
j
= 25°C
I
C
= 40A
I
C
= 200A
I
C
= 100A
1.0 1.5 2.0 2.5 3.53.0 4.0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
-1
10
0
V
GE
= 0V
10
1
C
oes
C
res
C
ies
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
0
10
1
10
2
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1 Ω
T
j
= 125°Ct
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
di/dt = -200A/µsec
T
j
= 25°C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 100 500
16
12
8
4
0200 400300
V
CC
= 600V
V
CC
= 400V
I
C
= 100A
Sep.2000
MITSUBISHI IGBT MODULES
CM100DU-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
( IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.19°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.35°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
