DPG30C200PB HiPerFRED VRRM = 200 V I FAV = 2x 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C200PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200PB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 200 V TVJ = 25C 1 A VR = 200 V TVJ = 150C 0.08 mA TVJ = 25C 1.26 V 1.51 V 1.01 V IF = forward voltage drop min. 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 150 C TC = 145C rectangular 1.29 V T VJ = 175 C 15 A TVJ = 175 C 0.69 V d = 0.5 for power loss calculation only 18 m 1.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25C 20 pF I RM max. reverse recovery current TVJ = 25 C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.50 TC = 25C 15 A; VR = 130 V -di F /dt = 200 A/s 90 240 W A TVJ = 125C 6.5 A TVJ = 25 C 35 ns TVJ = 125C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200PB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C 1) Weight 2 MD mounting torque FC mounting force with clip Product Marking Part Number 0.4 0.6 Nm 20 60 N Part number D P G 30 C 200 PB XXXXXX Logo Assembly Line Lot # g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) Zyyww abcdef Date Code Ordering Standard Part Number DPG30C200PB Similar Part DPG30C200PC DPG30C200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG30C200PB Package TO-263AB (D2Pak) (2) TO-247AD (3) * on die level Delivery Mode Tube Code No. 505804 Voltage class 200 200 T VJ = 175 C Fast Diode V 0 max threshold voltage 0.69 V R 0 max slope resistance * 14.7 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200PB Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 OP H1 Q E D 4 3 L 3x b2 2 L1 1 3x b 2x e C A2 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200PB Fast Diode 80 0.5 16 TVJ = 125C 70 30 A VR = 130 V IF = 30 A 14 IF = 15 A 0.4 60 12 50 IF [A] IRM 10 0.3 40 7.5 A [C] 8 [A] 0.2 30 IF = 7.5 A 15 A Qrr TVJ = 25C 150C 6 20 4 0.1 10 TVJ = 125C 2 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0 VF [V] Fig. 1 Forward current IF versus VF 100 200 300 400 500 600 0 100 200 300 400 500 600 -diF /dt [A/s] -diF /dt [A/s] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt 16 70 1.4 VR = 130 V 400 TVJ = 125C 14 VR = 130 V 1.2 TVJ = 125C 60 1.0 0.8 0.6 IF = 30 A 50 trr Kf VFR 10 0.2 IRM [ns] 40 Qrr 30 [V] 15 A [ns] 6 4 7.5 A 20 20 40 60 80 100 120 140 160 TVJ [C] 100 200 300 400 500 600 tfr VFR 0 0 0 100 0 100 200 300 400 500 600 -diF /dt [A/s] -diF /dt [A/s] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1.8 16 14 1.6 12 IF = 30 A 1.4 IF = 15 A 10 ZthJC IF = 7.5 A 8 [J] tfr 200 2 0.0 0 300 8 0.4 Erec IF = 15 A VR = 130 V 12 1.2 [K/W] 1.0 6 4 0.8 TVJ = 125C 2 VR = 130 V 0.6 0 0 100 200 300 400 500 600 -diF /dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a