SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1883 5 7 LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage e Low Resistance Current . Small Package MAXIMUM RATINGS (Ta = 25C) > VE (3)=0.54 (Typ.) >: IR=5A (Max.) : SC-70 Unit in mm CHARACTERISTIC SYMBOL | RATING | UNIT Maximum (Peak) Reverse Voltage VRM 85 Vv Reverse Voltage VR 80 Vv Maximum (Peak) Forward Current IpmM 200 mA Average Forward Current Io 100 mA Surge Current (10ms) IfFSM 1 A Power Dissipation P 200* mW Junction Temperature Tj 125 C Storage Temperature Range Tstg 55~125 C Mm we < = io oO Oo x= & <x eC 0+0. 05 0. 1523.4 ; s JEDEC _ EIAd _ TOSHIBA 1-1E1A * pad dimension of 44mm. Mounted on a glass epoxy circuit board of 20 20mm, ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 0.004g CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX.| UNIT VF) |Irp=lmA _ 0.28 _ Forward Voltage VF(2) |Ip=10mA _ 0.36 Vv VF(3) [Irp=100mA 0.54 | 0.60 Reverse Current IR VR=40V _ _ 5 | wA Total Capacitance Cr VR=O0V, f=1MHz 18 25 | pF (TOP VIEW) Marking TI be | mi s3 a 1193 1$$357 300m 100m A) we a 8 Ip 10m 3m FORWARD CURRENT 0.3m O.im 0 (pF) Cy TOTAL CAPACITANCE Ip VE Ta=100C 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE Vr Cr VR 4 8 12 16 20 24 REVERSE VOLTAGE VR (Vv) 28 Ww) 1.2 32 1.6 36 1194 (A) Ik REVERSE CURRENT 100 30 10 Su 300n 100n 30n 10n 3n In 0.3n O1n 0 Tr - VR Ta=100C 10 20 30 REVERSE VOLTAGE VR 40 (Vv) 50