TLUV5300 TELEFUNKEN Semiconductors Bicolor LED in o 5 mm Untinted Diffused Package Color Orange red Green Type TLUV5300 Technology Angle of Half Intensity o GaAsP on GaP GaP on GaP 30 Features D D D D Even luminance of the emitting surface D D D D Luminous intensity selected into groups Ideal as flush mounted panel indicators For DC and pulse operation Color mixing possible due to separate anode terminals Categorized for green color Wide viewing angle Common cathode 94 8388 Applications Indicating and illumination purposes Absolute Maximum Ratings Tamb = 25C, unless otherwise specified TLUV5300 Parameter Reverse voltage per diode DC forward current per diode Surge forward current per diode Power dissipation per diode Total power dissipation Junction temperature Storage temperature range Soldering temperature Thermal resistance junction/ambient per diode Thermal resistance junction/ambient total Rev. A1: 01.06.1995 Test Conditions tp 10 ms Tamb 55C Tamb 55C t 5 s, 2 mm from body Type Symbol VR IF IFSM PV Ptot Tj Tstg Tsd Value 6 30 1 100 150 100 -55 to +100 260 Unit V mA A mW mW C C C RthJA 450 K/W RthJA 300 K/W 1 (6) TLUV5300 TELEFUNKEN Semiconductors Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Orange red (TLUV5300 ) Parameter Per diode Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Test Conditions Type IF = 10 mA, IVmin/IVmax 0.5 IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Symbol Min Typ IV ld lp VF VR Cj 1 612 2.5 Symbol IV ld lp VF VR Cj Max 625 630 30 2 15 50 3 Min Typ Max 1 552 2.5 6 Unit mcd nm nm deg V V pF Green (TLUV5300 ) Parameter Per diode Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Test Conditions Type IF = 10 mA, IVmin/IVmax 0.5 IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz 6 575 565 30 2.4 15 50 3 Unit mcd nm nm deg V V pF Typical Characteristics (Tamb = 25_C, unless otherwise specified) 60 IF - Forward Current ( mA ) PV - Power Dissipation ( mW ) 125 100 75 50 25 30 20 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 1. Power Dissipation vs. Ambient Temperature 2 (6) 40 10 0 95 9983 50 0 95 9984 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature Rev. A1: 01.06.1995 TLUV5300 TELEFUNKEN Semiconductors tp/T=0.01 1000 Iv rel - Relative Luminous Intensity 1.6 0.02 0.05 0.1 100 0.2 0.5 1 10 Tamb 1 0.01 0.1 1 v55C Iv rel - Relative Luminous Intensity 0.8 0.4 IF=10mA 0 10 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 95 10087 Figure 3. Forward Current vs. Pulse Length 0 1.2 100 10 tp - Pulse Length ( ms ) 95 10085 Orange-Red 0 Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 20 2.4 30 40 1.0 0.9 50 0.8 60 70 0.7 80 Iv rel - Relative Luminous Intensity IF - Forward Current ( mA ) 10000 Orange-Red 2.0 1.6 1.2 0.8 0.4 IFAV=10mA, const. 0 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10042 95 10088 Figure 4. Rel. Luminous Intensity vs. Angular Displacement 50 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T 10 Iv rel - Relative Luminous Intensity Orange-Red IF - Forward Current ( mA ) 20 1 Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 1000 100 10 1 tp/T=0.001 tp=10ms 0.1 0 95 10086 10 2 4 6 8 1 0.1 0.01 10 VF - Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage Rev. A1: 01.06.1995 Orange-Red 1 95 10089 10 100 IF - Forward Current ( mA ) Figure 8. Relative Luminous Intensity vs. Forward Current 3 (6) TLUV5300 TELEFUNKEN Semiconductors 2.4 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 1.2 Orange-Red 1.0 0.8 0.6 0.4 0.2 0 590 Green 2.0 1.6 1.2 0.8 0.4 0 610 630 650 670 690 l - Wavelength ( nm ) 95 10090 95 10263 Figure 9. Relative Luminous Intensity vs. Wavelength Iv rel - Relative Luminous Intensity IF - Forward Current ( mA ) Green 100 10 tp/T=0.001 tp=10ms 1 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Green 1 0.1 0.01 0 2 4 6 8 10 VF - Forward Voltage ( V ) 95 10034 1 100 10 IF - Forward Current ( mA ) 95 10037 Figure 10. Forward Current vs. Forward Voltage Figure 13. Relative Luminous Intensity vs. Forward Current 1.6 1.2 Green Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 50 0.5 10 0.1 1.2 0.8 0.4 Green 1.0 0.8 0.6 0.4 0.2 IF=10mA 0 0 20 40 60 80 0 520 100 Tamb - Ambient Temperature ( C ) Figure 11. Rel. Luminous Intensity vs. Ambient Temperature 4 (6) 20 1 Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 1000 95 10035 10 95 10038 540 560 580 600 620 l - Wavelength ( nm ) Figure 14. Relative Luminous Intensity vs. Wavelength Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TLUV5300 Dimensions in mm 95 11271 Rev. A1: 01.06.1995 5 (6) TLUV5300 TELEFUNKEN Semiconductors Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) Rev. A1: 01.06.1995