Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 30V
▼ Low Gate Charge RDS(ON) 25mΩ
▼ Fast Switching ID28A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=100℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data and specifications subject to change without notice
Thermal Data Parameter
Storage Temperature Range
Total Power Dissipation 31.25
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.25
Continuous Drain Current, VGS @ 10V 24
Pulsed Drain Current195
Gate-Source Voltage ±25
Continuous Drain Current, VGS @ 10V 28
Parameter Rating
Drain-Source Voltage 30
200331053-1/4
AP40T03GS/P
Pb Free Plating Product
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03J) are available for low-profile applications.
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03GP) are available for low-profile applications.
GDSTO-263(S)
GDSTO-220(P)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 -V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A - - 25 mΩ
VGS=4.5V, ID=14A - - 45 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 15 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= ±25V - - ±100 nA
QgTotal Gate Charge2ID=18A - 8.8 - nC
Qgs Gate-Source Charge VDS=20V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 - nC
td(on) Turn-on Delay Time2VDS=15V - 6 - ns
trRise Time ID=18A - 62 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns
tfFall Time RD=0.83Ω- 4.4 - ns
Ciss Input Capacitance VGS=0V - 655 - pF
Coss Output Capacitance VDS=25V - 145 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 28 A
ISM Pulsed Source Current ( Body Diode )1--95
A
VSD Forward On Voltage2Tj=25℃, IS=28A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP40T03GS/P
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
AP40T03GS/P
0
25
50
75
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 10V
8.0V
6.0V
VG=4.0V
0
30
60
90
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC 10V
8.0V
6.0V
VG=4.0V
0.2
0.8
1.4
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I D=18A
VG=10V
10
30
50
70
0 5 10 15
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=14A
TC=25
℃
0.1
1
10
100
0 0.4 0.8 1.2 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP40T03GS/P
1
10
100
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC 0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
3
6
9
12
036912
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I D=18A
VDS =10V
VDS =15V
VDS =20V
10
100
1000
1 8 15 22 29
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
