10/2009
AWB7221R
2.30-2.70 GHz Infrastructure
3.2 W Power Amplier Module
ADVANCED PRODUCT INFORMATION - Rev 0.0
M41 Package
14 Pin 7 mm x 7 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
PRODUCT DESCRIPTION
The AWB7221R is a highly isolated, fully matched, Multi-
Chip-Module (MCM) designed for picocell, femtocell,
and customer premises equipment (CPE) applications
where stringent linearity and high power requirements
FEATURES
• InGaP-PlusTM HBT Technology
• +35 dBm P1dB
• 2.5% EVM @ 28 dBm (OFDMA)
• 30 dB Gain
• Integrated Step Attenuator
• Integrated output power detector
• High Efciency
• Low Transistor Junction Temperature
• Balanced and Matched for a 50 Ω System
• Highly Isolated
• Low Prole Miniature Surface Mount Package:
1 mm
• RoHS Compliant Package, 250oC MSL-3
AIR INTERFACES
• WiMAX
• LTE
APPLICATIONS
• Picocell, Femtocell, Home Nodes
• Customer Premises Equipment (CPE)
• Data Cards and Terminals
RF In put
Vcc 1
RF Output
Vref
Bi a s
Ne t work
Matching
Ne t work
Matching
Ne t work
Bi a s
Ne t work
Vcc 2
Step
Attenuator
Step
Attenuator
Attenuator Control Detector Output
Power
Detector
Power
Detector
are necessary to meet the extremely demanding needs
of small cell infrastructure architectures. Designed
for WiMAX and LTE air interfaces operating in the
2.30 – 2.70 GHz band, ,the AWB7221R delivers up
to +28 dBm of WiMAX power with exceptionally low
EVM. It operates from a convenient +4.0 V supply and
provides more than 30 dB of gain with a P1dB of +35
dBm. The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness. The
self-contained 7mm x 7mm x 1mm surface mount
package incorporates advanced matching networks
optimized for output power, efciency, and linearity in
a 50 Ω system.