E- R Ee ER VE BA Go Si PIN PHOTODIODES PRELIMINARY DATA Feb. 1998 _ WITH PRE-AMPLIFIER $6468 SERIES High-speed sensors with pre-amp FEATURES APPLICATIONS @ Cut-off frequency (Vec=5 V) _@ Optical fiber communication $6468: 15 MHz $6468-02: 35 MHz @ Video signal transmission S6468-05: 50 MHz @ Optical disk pick-up $6468-10: 100 MHz @ Low noise (f=1 MHz) $6468: 25 nVrms/Hz" $6468-02: 28 nVrms/Hz" $6468-05: 26 nVrms/Hz' $6468-10: 16 nVrms/Hz' @ 3 pin TO-18 package @ Active area: $6468, -02, -05: 60.8 mm S6468-10: $0.4 mm HOPTICAL AND ELECTRICAL CHARACTERISTICS [Ta=25 C, Veo=5V, RL=500 (, Ci=13 pF (S6468-05/-10: CL=3 pF)j Parameter Condition S6468 $6468-02 $6468-05 S6468-10 Unit , Min. | Typ. | Max. | Mn. | Typ. | Max.| Mn | Typ | Max | Mn | Typ | Max. Spectral Response Range 2X 320 to 1860 320 to 1000 320 to 1000 320 to 1000 nm Peak Sensitivity . Wavelength Ap . 900 - - 800 - - B00 - - 800 - nm 4=360rm - 13.5 - - 8.5 = - 75 - - 45 = rr! Photo Sensitivity Ss 1=7e0rm - 15.5 - - 11 - - 9.5 - - 5 - WV )=830rm . 16.5 - - 11 - - 9.5 - - 5 - Trans-impedance RT - 30 - - 20 - - 18 - - 10 - kKQ Power Supply Current lec | Ri=a - : 3 = - 3 : : 65 : - 18 mA : + Ri=a Output Bias Voltage *2 Vo Pin=0 pW 05 |}065] 08 | 065| 08 09 | 1.25 | 1.55 | 1.85 1.1 14 1.8 Vv Temperature Coefficient of mi Output Bias Voltage - - | 2] - - fp 2] - nn en - | BS] - fice Cut-off Frequency fc Pin=10 uWy | 12 15 : 28 35 : 40 50 : 80 | 100 - Mex . Nonlinear aa Output Voltage | _ | pictortion. |os| - | - |os | - | - | 10} - | - | og | - | - _| vee p 10 % Max. Output Impedance Zo | f=5 Hz : 30 - : 30 - : 17 : - 17 - Q . Pin=0 pW . Output Noise Voltage Vn f=1 MHz - 25 - - 28 . - 26 - - 16 Mite Overshoot - Pin=10 pW" - - 10 - - 10 - - 10 - - 10 % MABSOLUTE MAXIMUM RATINGS MRECOMMENDED OPERATING CONDITIONS Parameter Symbol | Min. | Max. | Unit Parameter Symbol S6468/-02 S6468-05/-10 Unit Power Supply Voltage Vee -0.5 7 Vv Power Suppl Man. Typ._|_Max. wn. Typ. Max. owe Power Dissipation Pp - | 300 | mW I \ottage PPI vee | 475] 5 | 5251475] 5 | 525] V Operating Temperature | Topr | -20 | 70 C il Load Resistance Ri | 500 . - 500 - - Q Storage Temperature Tstg -40 | 100 | C i Load Capacitance CL - - 13 - - 3 pF Operating *41: For definitions of Ru and CL, refer to the basic connection | Temperature Topr 0 - 60 0 - 60 | in figure 5. . *2: Output voltage Vout =Vo-(PinxS) Pin: incident radiant flux (uWV) *3: Peak value *4: A bypass capacitor (0.01 uF to 0.1 uF ceramic) is connected between the Vcc lead and the GND lead. The lead length should be less than 20 m (S6468/-02) or 5 mm (S6468-05/-10). Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice, No patent rights are granted to any of the circuits described herein, 1998 Hamamatsu Photonics K.K. Si PIN PHOTODIODES WITH PRE-AMFi!FIER S6468 SERIES Figure 1: Spectral Response Ta=25 C) 20 PHOTO SENSITIVITY (mV/uW) 200 400 600 800 1000 1200 WAVELENGTH (nm) Figure 3: Output Noise Spectrum [Typ. Ta=25 "C, Ri=500 0, Ci=13 pF (S6468-05/-10: 3 pF}, Voce5 V 100 90 80 70 60 50 40 30 20 OUTPUT NOISE DENSITY (nV/Hz"?) 10 0 O41 1 10 100 1000 FREQUENCY (MHz) Figure 5: Basic Connection Vec Vcc GND Vsignal KPINCODOTIA HAMAMAT StF HAMAMATSU PHOTONICS K.K., Solid State Division Figure 2: Frequency Characterisitics (Typ. Ta=25 "C, AL=500 0, Ci=13 pF (S6468-05/-10: SpF), Vec=5 V] 1 Tiny = OTM ITI Il :" i ih | no LLL | | | | o1 1 10 100 1000 FREQUENCY (MHz) Figure 4: Dimensional Outlines (Unit: mm) 5,440.2 ee @ 4,740.1 | $$+! | | WINDOW ws # 3.0+0.1 a PHTOSENSITIVE d SURFACE ol a Oo Lat} 0.45 >| LEA PU @ Vcc @ GND (CASE) V signal KPINACOO1ES: Note: Ri and C1 are total resistive load and capacitive load viewed fram the Vsignal terminal. They shoud be used in accordance with the recommended operating conditions: RL>500 Q and CL< 13 pF (S6468-05/-10: CL<3 pF). A bypass capacitor (Ca=0.01 pF to 0.1 uF ceramic) is connected between the Vcc lead and the GND lead. The lead length should be less than 20 mm (S6468/-02) and 5 mm (S6468-05/-10). 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184 USA: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0860, Fax: (1) 908-231-1218 Garmany. Hamamatsu Photonics Deutschland GmbH: Arzbargerstr. 10, 0-82211 Herrsching am Ammersee, Germany, Talephona: (49) 08152-3750, Fax: (49) 08152-2658 France Hamamatsu Photonics France: $.A.A.L.: 8, Rue du Saula Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Aiagoort Hamamatsu Photonics UK Limited: Lough Pomt, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN? 7JA, United Kingdom, Telephone: (44) 0181-36 7-3560, Fax: (44) 0181-367-6984 Noth urape. Hamamatsu Photonics Norden AB: Fargatan 7, 5-164 40 Kista, Sweden, Telephone: (46) 084-703-2950, Fax: (46) 08-750-5895 daly. Hamamatsu Photonics falia S.A.L.: Via dolla Moia, WE, 20020 Aresa, Milana, haly. Telaphone: (39) 02 935 81 733, Fax: (39) 02 935 8 741 Cat. No. KPIN1026E03 Feb, 1998 SI Printed in Japan {1. 000)