G E SOLID STATE OL DEM 3875081 0017338 2 I 3875081 GE SOLID STATE CIE 17338 D Te 332-27 Darlington Power Transistors TIP120, TIP121, TIP122 . File Number 998 8-Ampere N-P-N Darlington Power Transistors * 60, 80, and 100 Volts, 65 Watts TERMINAL DESIGNATIONS Gain of 1000 at 0.5A Gain of 1000 at 3A E Features: < _. ae = c = Operates from IC without predriver (FLANGE) OC) lis = Low leakage at high temperature == a TOP VIEW Applications: 9268-39969 = Power switching = Audio amplifiars Hammer drivers Sories and shunt regulators JEDEC T0-220AB The RCA-TIP120, TIP121 and TIP122 are monolithic n-p-n silicon Darlington transistors designed for low- and medium- frequency power applications. The construction of these devices provides good forward second-breakdown capabil- ity; their high galn makes it possible for them to be driven directly from integrated circuits. These devices are supplied in the JEDEC TO-220AB (VER- SAWATT) plastic package. The TIP120, TIP121 and TIP122 are n-p-n complements of the TIP125, TIP126 and TIP127 described In RCA data bul- 92tS-20691R7 letin File 997. Fig. | Schematic diagram for all types, MAXIMUM RATINGS, Absolute-Maximum Values: TIP120 TIP121 TIP 122 Voad voce ee secveseeeeeeceseeteseceteneveuvsbennenaenanes 60 80 100 Vv Vcen(sus) Rac= 100 ccc cece ce cece tee tence ete n cena 60 80 100 Vv Veco(SUS) oo. e eee ceeceeenee be beveeeaeeones beeeeveeveneee 60 80 100 Vv Veev(sus) Vee TVS V lec ccc cc ceeeeeeenee Cece keene tenewens . 60 80 100 Vv . 5 5 5 Vv 8 8 8 A 10 10 10 A 0.25 0.25 0.25 A Tg. up to 25C 65 65 65 WwW * Te above 25C tee ee s~CD erate linearly at 0.52 PS a wee 65 10 150 C Ty At distances = 1/8 in. (3.17 mm) from case for 10s max. ..... ence eee a teen tet eseneaee oe 235 \ c G E SOLID STATE Ou vey 3875081 Oo1473395 0 [ "3875081 G E SOLID STAT E ~O1E 17339 0D T-33-29 . Darlington Power Transistors TIP120, TIP121, TIP122 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C TEST CONDITIONS LIMITS . CHARAC.- Voltage Current TERISTIC Vide Ade TIP120 TIP121 TIP122 UNITS 4 Vee! Veel|!c \g Min. | Max. | Min, | Max. | Min. | Max. 60 - 0.2 - - - - ogo 80 - -|- | o2] - - Ie=0 100 - -|- -|- | 02 mA 30 0 - 0.5 ~ - - - 'CEO 40 0 - ~ - O65] - - 50 0 ~ - = - = 0.5 lego 58 Q - 2 - 2 ~ 2 mA Voeolsus) 0.24) 0 60 | 80 | 100 ~ V h 3 38 1000 | 1000 = 41000 - FE 3 0.58 1000 | 1000 =_| 1000 = VBE 3 38 - |25 | - | 28} - | 25 34 10.012 -~ 2 ~ 2 - 2 Ve lsat) 5 {oo2| - | 3 | - | 3}, - [3 Me 5 1 1000 - {1000 1000 + ' f=1 kHz ~ |hte| f=1 MHz 5 1 20 - | 20 - | 20 - Cobo Vogzl0Vv ~ 200} - 200 | - 200 | pF f=1 MHz Is/p t=0.5 snon- | 25 2.6 - 2.6 - 2.6 - A rep. pulse Roc - 192}) - 192] - 1.92 | C/W 8 pulsed, pulse duration = 300 us, duty factor < 2%. HOTE cunent ocraring at constant TTTTT TAGE APPLES ONLY TO THE OFS SIPATION- 44 ! Zo UMITEO PORATION AND THE Isrq-LIMITEO EHYd!y aE PORTION OF MAXIMUM OPERATING AREA GH z=? g CUAVE, GO KOT DERATE THE HH ze a SPECIFIED VALUE FOR Lc WAT tH a ges rE TGEH 89 HH HHA ze Z is THY rt Hd ht ZS t pgeuee Cr 2u90 2 + ay tH G20 BE Hits eye ep, t .- a % Htrrtt Ba Ht t +t 5 SHH Kos eas 4 ze as Ao hss. zn3 aah Hite Pu HPS eH TT a ont Pit + tf CHER HH cot i Fey 1 r mw 1S so ms 200 CASE TEMPERATURE 1Tc)C Fig. 2 Derating curve for a 92C5- Pocegar iI types. OC FORWARD-CURSENT TRANSFER RATIO (hee) ol COLLECTOR-TO-EMITTER VOLTAGE (Veg)! SY oF l COLLECTOR CURRENT (Ig) ~ ie a oo 4865 - 2480281 Fig. 3 Typical de beta characteristics for all types. 341 0881 G-08 sre G6 E SOLID STATE OL DE ff 3875081 oo17auo 4 T ~ 3875081 GE SOLID STATE Darlington Power Transistors 47540 DBR D9 TIP120, TIP121, TIP122 a] CASE TEMPERATURE (Tc}s 25C | (CURVES MUST BE WITH JHCREASE LIMITEO FOR SINGLE NONREPETITIVE PULSE Vv Voce (MAX.) GO VITIP [24) COLLECTOR~TO-EMITTER VOLTAGE (Vog)~V aa e2cs-20077 Fig. 4 Maximum operating areas for TIP120 and TIP121, CASE TEMPERATURE (Tc) * 25C & {CUAVES MUST BE WITH INCREASE 4 = T( MAX.) PULSED - oa? CURRENT (Zc )a ~ x Gy ee i to COLLEC TOA- TO- EMITTER VOLTAGE Nopl- 2G 26978 Fig, 5 ~ Maximum operating areas for TIP122. 342 0882 G-09 G E SOLID STATE O14 de ff 3a7soa1 Oo1u7341 B i Poe ee aoe 3875081 G E SOLID STATE / OTE 17341 =D T*83-29 Darlington Power Transistors e as TIP120, TIP121, TIP122 CURRENT ela VOLTAGE (Voe]*5 TEMPERATURE {tc}e25ee [Moe tect] v 8 cy VOLTAGE SMALL-SIGNAL 3 5 Z 2 = 5 # e z & F g E & 3 a 8 oa al 0 COLLECTOR CURRENT [IiA FREQUENCY (f} + MHZ o2es-24608 9205-24904 Fig. 6 Typical small-signal current gain Fig. 7 ~ Typical saturation characteristics tor all types. for all types. y CORLECTOR-TO-EMIT TER VOLTAGE 4 I 5 g j BASE CURRENT (Ig )ma BASE -TO-EMITTEM VOLTAGE (Vag) COLLECTOR-TO-EWITTER VOLTAGE {ce}A 928+ 24908a1 92Cs- 24506 Fig. 8 Typical input characteristics Fig. 9 Typical output characteristics for all types. for ail types. COLLECTOR <TO-EMITTER VOLTAGE COLLECTOR SUPPLY VOLTAGE [Yoc} 20 Tqyt-Tag * tg/800 COLLECTOR CURRENT (Te) a ' wo $EC$~ 24908 MASE ~TO-EMITTER VOLTAGE (Va lV 9205 2anoras COLLECTOR CURAENT [Ich & Fig. 10 Typical transfer characteristics Fig. 11 Typical saturated switching characteristics for ail typas, for all types. 343