DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BAT81; BAT82; BAT83 Schottky barrier diodes Product specification Supersedes data of July 1991 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83 FEATURES DESCRIPTION * Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. * High breakdown voltage * Guard ring protected * Hermetically-sealed leaded glass package * Low diode capacitance. k handbook, halfpage a APPLICATIONS MAM193 * Ultra high-speed switching * Voltage clamping * Protection circuits Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol. * Blocking diodes. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR PARAMETER CONDITIONS MIN. MAX. UNIT continuous reverse voltage BAT81 - 40 V BAT82 - 50 V BAT83 - 60 V - 30 mA IF continuous forward current IFRM repetitive peak forward current tp 1 s; 0.5 - 150 mA IFSM non-repetitive peak forward current tp 10 ms - 500 mA Tstg storage temperature -65 150 C Tj junction temperature - 125 C 1996 Mar 20 2 Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83 ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.2 IF = 0.1 mA 330 mV IF = 1 mA 410 mV IF = 15 mA 1 V IR reverse current VR = VRmax; see Fig.3 200 nA Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.4 1.6 pF THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOD68 standard mounting conditions. 1996 Mar 20 3 VALUE UNIT 320 K/W Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83 GRAPHICAL DATA MGC690 2 10halfpage handbook, MGC689 4 10halfpage handbook, (1) IR (nA) IF (mA) 10 3 (1) (2) (3) 10 2 10 (2) 10 1 1 (3) 10 (1) (2) (3) 10 -1 0 0.2 0.4 0.6 0.8 10 -2 1.0 VF (V) (1) Tamb = 85 C. (2) Tamb = 25 C. (3) Tamb = -40 C. Fig.2 Fig.3 MGC688 2.0 Cd (pF) 1.5 1.0 0.5 0 15 30 45 60 VR (V) f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 20 0 20 40 VR (V) 60 (1) Tamb = 85 C. (2) Tamb = 25 C. (3) Tamb = -40 C. Forward current as a function of forward voltage; typical values. 0 -1 4 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83 PACKAGE OUTLINE handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. Cathode indicated by a coloured band. The diodes are type branded. Fig.5 SOD68; (DO-34). DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 20 5