AEG CORP I7E D mm 0029426 0009735 6 a TELEFUNKEN electronic Creative Technologies Silicon Epitaxial Planar Diodes Applications: General purposes Dimensions in mm Terminals are tin plated Cathode Do= Dy=1.4+0" 81s1e Absolute maximum ratings Reverse voitage BAV 100 Va BAV 101 Va BAV 102 Va BAV 103 Va Forward current I Peak surge forward current t,=1s, 7. = 25C tesa Forward peak current f=50 Hz few Junction temperature ij Storage temperature range Tota Maximum thermal resistance Junction ambient on PC board 50 mmx50 mmx1.6 mm Rina 71.2/756.0588 E artigo a BAV 100...BAV 103 eee no m wah T-08-04 weansannneloegam MR fee oe Glass case SOD 80 MiniMELF Weight max. 0.1 g 60 Vv 120 Vv 200 Vv 250 Vv 250 mA 1 A 625 mA 175 c - 65....4+175 C _500 K/W 25 AEG CORP 476 D Mm 0029426 0009736 T Min. Typ. Max. Characteristics T= 25 C, unless otherwise specified Forward voltage f,=100 mA V, 1 Vv Reverse current V,= 50V BAV 100 Ip 100 nA V,=100V BAV 101 In 7400 nA V,=150V BAV 102 Ip 100 nA Vz=200V BAV 103 In 100 nA T= 100 C V,= 50V BAV 100 Ih 15 pA V,=100V BAV 101 Ia 15 pA V,=150V BAV 102 Ih 15 pA V,=200V BAV 103 In 15 pA Breakdown voltage I, = 100 pA BAV 100 Visa)! 60 Vv BAV 101 BR. 120 Vv BAV 102 Very 200 Vv BAV 103 Vier) 250 Vv Diode capacitance V, = 0, f= 1 MHz Ch 1.5 pF Differential forward resistance = 10mA t 5 Q Reverse recovery time I, =1, = 30 mA, i, =3 mA, A, =100 O t 50 ns vw 26 at remem, er po inc einen tt dae an me AEG CORP J?E D mm goeqyay 0009737 1 a BAV 100...BAV 103 T-03-09 oh rebivieaniaannemanone * Ba 5968 6 sa os opty to 88 5970 @ Scattering limit Scattering fimit + 100 10 1 0.1 27