VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS (R) * Trench MOS Schottky technology TO-220AB ITO-220AB * Low forward voltage drop, low power losses * High efficiency operation * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 2 3 1 1 2 3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VFT1080S VT1080S PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB PIN 2 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. TO-262AA K K * Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) MECHANICAL DATA A NC 1 VBT1080S 3 VIT1080S NC K HEATSINK A 2 PIN 1 PIN 2 PIN 3 K Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs maximum IF(AV) 10 A VRRM 80 V IFSM 100 A VF at IF = 10 A 0.60 V TJ max. 150 C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Circuit configuration Single MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VT1080S VFT1080S VBT1080S VIT1080S UNIT Maximum repetitive peak reverse voltage VRRM 80 V Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Non-repetitive avalanche energy at TJ = 25 C, L = 60 mH EAS 110 mJ Peak repetitive reverse current at tp = 2 s, 1 kHz, TJ = 38 C 2 C IRRM 1.0 A Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min VAC 1500 V TJ, TSTG -55 to +150 C Operating junction and storage temperature range Revision: 16-Mar-18 Document Number: 89165 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 10 mA IF = 5 A Instantaneous forward voltage IF = 10 A IF = 5 A IF = 10 A VR = 80 V Reverse current SYMBOL TYP. MAX. UNIT VBR 80 (minimum) - V 0.57 - 0.67 0.81 0.52 - 0.60 0.70 20 600 A 10 20 mA TA = 25 C TA = 25 C VF (1) TA = 125 C TA = 25 C IR (2) TA = 125 C V Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VT1080S VFT1080S VBT1080S VIT1080S UNIT RJC 2.2 5.5 2.2 2.2 C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT1080S-E3/4W PREFERRED P/N 1.88 4W 50/tube Tube ITO-220AB VFT1080S-E3/4W 1.73 4W 50/tube Tube TO-263AB VBT1080S-E3/4W 1.36 4W 50/tube Tube TO-263AB VBT1080S-E3/8W 1.36 8W 800/reel Tape and reel TO-262AA VIT1080S-E3/4W 1.43 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89165 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Resistive or Inductive Load Instantaneous Reverse Current (mA) Average Forward Current (A) 12 V(B,I)T1080S 10 8 VFT1080S 6 4 2 0 0 25 75 50 100 125 150 175 TA = 125 C TA = 100 C 1 0.1 TA = 25 C 0.01 0.001 20 30 40 50 60 80 70 90 100 Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 10 000 Junction Capacitance (pF) D = 0.2 6 5 D = 1.0 D = 0.1 4 T 3 2 1 D = tp/T 2 4 6 8 1000 100 tp 10 0.1 0 0 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 D = 0.5 D = 0.3 7 Average Power Loss (W) TA = 150 C 10 Percent of Rated Peak Reverse Voltage (%) 8 10 12 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (C/W) 100 Instantaneous Forward Current (A) 100 TA = 150 C 10 TA = 125 C TA = 100 C 1 TA = 25 C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 10 Junction to Case VFT1080S V(B,I)T1080S 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 16-Mar-18 Document Number: 89165 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 16-Mar-18 Document Number: 89165 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.022 (0.56) 0.014 (0.35) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 16-Mar-18 Document Number: 89165 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VBT1080S-E3/4W VBT1080S-E3/8W VFT1080S-E3/4W VIT1080S-E3/4W VT1080S-E3/4W