PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF421
VIDEO TRANSISTORS BF423
TO-92
Plastic Package
Hi
h Volta
e Video Am
lifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL 423 421 UNITS
Collector Emitter Voltage VCEO 250 300 V
Collector Base Voltage VCBO 250 300 V
Emitter Base Voltage VEBO 5V
Collector Current Continuous IC500 mA
Power Dissipation@ Ta=25ºC PD800 mW
Derate Above 25ºC 6.4 mW/ºC
Power Dissipation@ Tc=25ºC PD2.75 W
Derate Above 25ºC 22 mW/ºC
Operating And Storage Junction Tj, Tstg -55 to +150 ºC
Temperature Range
THERMAL RESISTANCE
Junction to ambient Rth(j-a) 156 ºC/W
Junction to case Rth(j-c) 45 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 423 421 UNITS
Collector Emitter Voltage* VCEO IC=1.0mA,IB=0 >250 >300 V
Collector Base Voltage VCBO IC=100µA.IE=0 >250 >300 V
EmitterBase Voltage VEBO IE=100µA, IC=0 >5 >5 V
Collector-Cut off Current ICBO VCB=200V,IE=0 <10 <10 nA
Emitter-Cut off Current IEBO VEB=5.0V, IC=0 <100 <100 nA
DC Current Gain hFE IC=25mA,VCE=20V >50 >50
Collector Emitter Saturation Voltage VCE(sat) IC=20mA,IB=2mA <0.5 <0.5 V
Base Emitter Saturation Voltage VBE(sat) IC=20mA,IB=2mA <2 <2 V
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