BA682 / BA683
Document Number 85530
Rev. 1.5, 16-Mar-06
Vishay Semiconductors
www.vishay.com
1
94 9371
Band Switching Diodes
Features
• Silicon Planar Diodes
• Low differential forward resistance
• Low diode capacitance
• High reverse impedance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Band switching in VHF-tuners
Mechanical Data
Case: MiniMELF Glass case SOD80
Weight: approx. 31 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Ordering code Remarks
BA682 VR = 35 V, rf at IF 3 mA = max 0.7 ΩBA682-GS18 or BA682-GS08 Tape and Reel
BA683 VR = 35 V, rf at IF 3 mA = max 1.2 ΩBA683-GS18 or BA683-GS08 Tape and Reel
Parameter Test condition Symbol Value Unit
Reverse voltage VR35 V
Forward continuous current IF100 mA
Parameter Test condition Symbol Value Unit
Junction to ambient air on PC board
50 mm x 50 mm x 1.6 mm
RthJA 500 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg - 55 to +150 °C
e2
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Document Number 85530
Rev. 1.5, 16-Mar-06
BA682 / BA683
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 100 mA VF1000 mV
Reverse current VR = 20 V IR50 nA
Diode capacitance f = 100 MHz, VR = 1 V CD1.5 pF
f = 100 MHz, VR = 3 V BA682 CD1.25 pF
BA683 CD1.2 pF
Differential forward resistance f = 200 MHz, IF = 3 mA BA682 rf0.7 Ω
BA683 rf1.2 Ω
f = 200 MHz, IF = 10 mA BA682 rf0.5 Ω
BA683 rf0.9 Ω
Figure 1. Differential Forward Resistance vs. Forward Current
Figure 2. Diode Capacitance vs. Reverse Voltage
0.1 1 10
0.1
1
10
100
100
94 9074
BA 683
r - Differential Forward Resistance (Ω)
f
f = 200 MHz
T
j
= 25 °C
BA 682
I
F
- Forward Current (mA)
0.1
0
0.5
1.0
1.5
2.0
3.0
C - Diode Capacitance (pF)
D
10010
94 9075
2.5
V-Reverse Voltage (V)
T
f = 200 MHz
= 25 °C
R
BA 683
BA 682
j
1
BA682 / BA683
Document Number 85530
Rev. 1.5, 16-Mar-06
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
96 12070
3.7 (0.146)
3.3 (0.130)
0.47 max. (0.019)
Cathode indification
2.5 (0.098) max
5.0 (0.197) ref
1.25 (0.049) min
2.0 (0.079) min
1.6 (0.063)
1.4 (0.055)
Document no.: 6.560-5005.01-4
Rev. 7 - Date: 07.February.2005
foot print recommendation:
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Document Number 85530
Rev. 1.5, 16-Mar-06
BA682 / BA683
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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