Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 1 1Publication Order Number:
D45C12/D
D45C12 (PNP),
D44C12 (NPN)
Complementary Silicon
Power Transistor
The D45C12 and D44C12 are for general purpose driver or medium
power output stages in CW or switching applications.
Features
•Low Collector−Emitter Saturation Voltage − 0.5 V (Max)
•High ft for Good Frequency Response
•Low Leakage Current
•Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Value
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎ
ÎÎÎ
VCEO
ÎÎÎÎÎ
ÎÎÎÎÎ
80
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎ
ÎÎÎ
VCES
ÎÎÎÎÎ
ÎÎÎÎÎ
90
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Base Voltage
ÎÎÎ
ÎÎÎ
VEB
ÎÎÎÎÎ
ÎÎÎÎÎ
5.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous
Peak (Note 1)
ÎÎÎ
Î
Î
Î
ÎÎÎ
IC
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
4.0
6.0
ÎÎ
Î
Î
ÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Total Power Dissipation @ TA = 25C
ÎÎÎ
Î
Î
Î
ÎÎÎ
PD
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
30
1.67
ÎÎ
Î
Î
ÎÎ
W
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
ÎÎÎ
TJ, Tstg
ÎÎÎÎÎ
ÎÎÎÎÎ
−55 to 150
ÎÎ
ÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Max
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance,
Junction−to−Case
ÎÎÎ
Î
Î
Î
ÎÎÎ
RJC
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
4.2
ÎÎ
Î
Î
ÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance,
Junction−to−Ambient
ÎÎÎ
ÎÎÎ
RJA
ÎÎÎÎÎ
ÎÎÎÎÎ
75
ÎÎ
ÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering
Purposes: 1/8 in from Case for 5 Sec
ÎÎÎ
Î
Î
Î
ÎÎÎ
TL
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
275
ÎÎ
Î
Î
ÎÎ
C
1. Pulse Width 6.0 ms, Duty Cycle 50%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
D4xC12
AYWW
1
Base 3
Emitter
4
Collector
2
Collector
4.0 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS 80 VOLTS
TO−220AB
CASE 221A
STYLE 1
123
4
MARKING DIAGRAM
& PIN ASSIGNMENT
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
D45C12 (PNP), D44C12 (NPN)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.2 Adc)
(VCE = 1.0 Vdc, IC = 1.0 Adc)
(VCE = 1.0 Vdc, IC = 2.0 Adc)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
40
20
20
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
120
−
−
Î
Î
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Typ
ÎÎÎ
ÎÎÎ
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = Rated VCES, VBE = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICES
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
0.1
Î
A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VEB = 5.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
10
A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 50 mAdc)
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.135
ÎÎÎ
ÎÎÎ
0.5
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(sat)
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.85
ÎÎÎ
ÎÎÎ
1.3
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Capacitance (VCB = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
Ccb
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
125
ÎÎÎ
ÎÎÎ
−
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Gain Bandwidth Product (IC = 20 mA, VCE = 4.0 Vdc, f = 20 MHz)
ÎÎÎÎ
ÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
40
ÎÎÎ
ÎÎÎ
−
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING TIMES
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay and Rise Times (IC = 1.0 Adc, IB1 = 0.1 Adc)
ÎÎÎÎ
ÎÎÎÎ
td + tr
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
50
ÎÎÎ
ÎÎÎ
75
ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time (IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
ÎÎÎÎ
ÎÎÎÎ
ts
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
350
ÎÎÎ
ÎÎÎ
550
ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time (IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
ÎÎÎÎ
ÎÎÎÎ
tf
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
50
ÎÎÎ
ÎÎÎ
75
ns
ORDERING INFORMATION
Device Package Shipping†
D45C12 TO−220AB
D45C12G TO−220AB
(Pb−Free)
50 Units / Rail
D44C12 TO−220AB 50
U
n
i
ts
/
R
a
il
D44C12G TO−220AB
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
200
0.04
Figure 1. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
20
0.07 0.1 0.2 0.3 1.0 2.0 4.0
70
50
40
30
80
60
hFE, DC CURRENT GAIN
0.4 0.7
100
VCE = 1.0 Vdc
TJ = 25°C
1.0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
1.0
0.01
IC, COLLECTOR CURRENT (AMPS)
dc
1.0 s
2.0
0.1 ms
10 20 100
0.2
5.0
TC ≤ 70°C
DUTY CYCLE ≤ 50%
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
90
3.0
1.0 ms
10 s
0.02
0.03
0.05
0.3
0.1
0.5
2.0
3.0
5.0
3.0 7.0 30 50 70
D45C12 (PNP), D44C12 (NPN)
http://onsemi.com
3
PACKAGE DIMENSIONS
CASE 221A−09
ISSUE AA
TO−220AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 −−− 1.15 −−−
Z−−− 0.080 −−− 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D45C12 (PNP), D44C12 (NPN)
http://onsemi.com
4
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