LDS-0222-1, Rev. 1 (111515) ©2011 Microsemi Corporation Page 1 of 6
1N941UR-1 thr u 1N945BUR-1
Available on
commercial
versions
11.7 Volt Temperature Compensated
Zener Reference Diodes
Qualified per MIL-PRF-19500/157
*Quali fied Levels:
JAN, J AN TX,
JANTXV and JAN S
(available on some part
numbers)
DESCRIPTION
The popular 1N941UR-1 t hr u 1N 9 45BU R-1 seri es of Zero-TC Referenc e D iodes pr ovides a
sel ection of 11.7 V n om i nal volt ages and temperatur e coeffic ients to as low as 0.0002 %/oC for
minimal voltage change with tem per atur e wh en operated at 7. 5 mA . Some of these g l ass ,
DO-213AA reference diodes are al so av ai lable in JAN, JANTX , JANTX V and JANS military
quali fications. Microsemi al so offers numerous ot her Zener R eference D iode product s for a
var i ety of ot her voltages from 6.2 V to 200 V.
DO-213AA
Package
Also available in:
DO-35 (DO-204AH)
(axial-leaded)
1N941-1 th r u1N945B-1
Important: For the latest infor mation, visit our website http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent of the JEDEC registered 1N941 thru 1N945 series.
• Standard reference voltage of 11.7 V +/- 5% with tighter tolerances also available for commercial.
• Internal meta llurgical bond.
• *JAN, JANTX, JANT XV and JANS qualification per MIL-PRF-19500/157 available on 1N941BUR-1,
1N943BUR-1, 1N944BUR-1, and 1N945BUR-1.
• RoHS compliant versions available (commercial grade only).
APPLICATI ONS / BENE F ITS
• Provides minimal voltage changes over a broad temperature range.
• For instrumentation and other circuit designs requiring a stable voltage reference.
• Maximum tem perature coefficient selections availabl e from 0.01 %/ºC to 0.0005 %/ºC.
• Non-sensitive to ESD per MIL-STD-750, method 1020.
MAXIMUM RATING S
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: + 353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditi ons
Symbol
Value
Unit
Power Dissipation @ TL = 25
o
C and max imu m current
IZM of 39 mA.
(1, 2)
PD 500 mW
Junction and Storage Temp TJ and
TSTG
-55 to +175
o
C
Maximum Zener Current
IZM
39
mA
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. For optimum voltage-temperature stability, IZ = 7.5 mA (less than 95 mW in dissipated power).
2. Derate at 3.33 mW/oC above TA = +25 oC.
LDS-0222-1, Rev. 1 (111515) ©2011 Microsemi Corporation Page 2 of 6
1N941UR-1 thr u 1N945BUR-1
• CASE: Hermetically sealed glass case with surface mount DO-213AA (MELF, SOD-80, LL34) package.
• TERMINALS: Tin-lead plated or RoHS co mpliant matt e-tin plating availabl e (on commercial grade only) and solderable per MIL-
STD-750, method 2026.
• MARKING: Cathode band.
• POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end.
• MOUNTING SURFACE SELE CTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/oC. The
COE of the mounting surface system should be selected to provide a s uitable match with this device.
• TAPE & RE EL opti on: Standard per EIA-481-B with 12 mm tape. Consult factory for quantities. (Add “TR” suffix to part number.)
• WEIGHT: 0.2 grams.
• See Package Dimensions on the last page.
Applicable to: JAN, JANTX, JANTXV and JANS lev el 1N941, 1N943, 1N944, and 1N945 only:
JAN 1N941 B UR -1
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
JEDEC type number
(See
Electrical Characteristics
table)
Metallurgically Bonded
Surface Mount Package
Temperature Coefficient
range of -55 oC to +150 oC
Appl icabl e to: Commerc i al l evel 1N941 thru 1N945B:
1N941 A UR -1 -1% (e3)
JEDEC type number
(See
Electrical Characteristics
table)
Temperature Coefficient
range:
A = -55 oC to +100 oC
B = -55 oC to +150 oC
Blank = 0 oC to +75 oC
Surface Mount Package
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tighter Reference Tolerance
1%
2%
3%
Blank = 5%
Metallurgically Bonded
LDS-0222-1, Rev. 1 (111515) ©2011 Microsemi Corporation Page 3 of 6
1N941UR-1 thr u 1N945BUR-1
SYMBOLS & DEFI NITIONS
Symbol
Definition
IR
Reve rse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
VZ
Zener Voltage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
VZT
Zener Voltage Temperature.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when bi ased to operate in i ts breakdown region at a
specified rms current modulation (typically 10% of IZT o r IZK) and superimposed on IZT or IZK respectively.
JEDEC
TYPE
NUMBER
(Notes 4)
ZENER
VOLTAGE
VZ @ I ZT
(Note 3)
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR @ 8 V
VOLTAGE
TEMPERATURE
STABILITY
∆
VZT
MAXIMUM
(Note 2 & 3)
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COEFFICIENT
α
VZ
Volts
mA
Ohms
μA
mV
oC
% / oC
1N941UR-1
1N941AUR-1
1N941BUR-1
11.12 - 12.28
11.12 - 12.28
11.12 -12.28
7.5
7.5
7.5
30
30
30
15
15
15
88
181
239
0 to +75
-55 to +100
-55 to +150
0.01
0.01
0.01
1N942UR-1
1N942AUR-1
1N942BUR-1
11.12 - 12.28
11.12 - 12.28
11.12 - 12.28
7.5
7.5
7.5
30
30
30
15
15
15
44
90
120
0 to +75
-55 to +100
-55 to +150
0.005
0.005
0.005
1N943UR-1
1N943AUR-1
1N943BUR-1
11.12 -12.28
11.12 - 12.28
11.12 - 12.28
7.5
7.5
7.5
30
30
30
15
15
15
18
36
47
0 to +75
-55 to +100
-55 to +150
0.002
0.002
0.002
1N944UR-1
1N944AUR-1
1N944BUR-1
11.12 - 12.28
11.12 - 12.28
11.12 - 12.28
7.5
7.5
7.5
30
30
30
15
15
15
9
18
24
0 to +75
-55 to +100
-55 to +150
0.001
0.001
0.001
1N945UR-1
1N945AUR-1
1N945BUR-1
11.12 - 12.28
11.12 - 12.28
11.12 - 12.28
7.5
7.5
7.5
30
30
30
15
15
15
4
9
12
0 to +75
-55 to +100
-55 to +150
0.0005
0.0005
0.0005
*JEDEC Registered Data.
NOTES: 1. Measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25 oC.
2. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV
change at any discrete temperature between the established limits.
3. Voltage measurements to be performed 15 seconds after application of dc current.
4. T he 1N 9 41B UR-1, 1N943BUR-1, 1N9 44B UR -1, and 1N945BUR-1 only ar e military qualified to MIL-PRF-19500/157 up to the JANS
level.
LDS-0222-1, Rev. 1 (111515) ©2011 Microsemi Corporation Page 4 of 6
1N941UR-1 thr u 1N945BUR-1
IZ – Operating Current (mA)
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE I N OPERATING CURRENT
IZ – Operating Current (mA)
FI GURE 2
TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERATING CURRENT
Change in temperature coefficient (%/oC)
Change in temperature coefficient (mV/oC)
The curve shown in Figure 1 is typical of the diode
series and greatly simplifies the estimation of the
Temperature Coeffici ent (TC ) when the di od e i s
operated at currents other than 7.5 mA.
EXAMPLE: A diode in this series is operated at a
current of 7.5 mA and has specified Temperature
Coe fficient (TC) limits of +/-0.002 %/oC. To obtain
the typical Temperature Coefficient limits for this
same diode operated at a current of 6.0 mA, the
new TC limits (%/oC) can be estimated using the
graph in Figure 1.
At a test current of 6.0mA the change in
Temperature Coefficient (TC) is approximately –
0.0009 %/oC. The algebraic sum of +/-0.002 %/oC
and –0.0009 %/oC gives the new estimated limits of
+0.0011 %/
o
C and -0.0029 %/
o
C.
∆V
Z
– Change in Zener Voltage (mV)
This curve in Figure 2 illustrates the change of
diode voltage arising from the effect of
impedance. It is in effect, an exploded view of
the Zener operating region of the I-V
characteristic.
In conjunction with Figure 1, this curve can be
used to estimate total voltage regulation under
conditions of both varying temperature and
current.
LDS-0222-1, Rev. 1 (111515) ©2011 Microsemi Corporation Page 5 of 6
1N941UR-1 thr u 1N945BUR-1
600
500
400
300
200
100
0
0 25 50 75 100 125 150 175
TEC, Ambient tem per ature ( °C)
FIGURE 3
POWER DERATING CURVE
Operating Current lZT (mA)
FIGURE 4
TYPICAL ZENER IMPEDANCE VS. OPERATING CURRENT
P
D
, Rated Power
Dissipation (mW)
Zener Impedan ce Z
ZT
(Ohms)
LDS-0222-1, Rev. 1 (111515) ©2011 Microsemi Corporation Page 6 of 6
1N941UR-1 thr u 1N945BUR-1
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent
to Φx symbology.
Inch
Millimeter
DIM
MIN
MAX
MIN
MAX
BD
0.063
0.067
1.60
1.70
ECT
0.016
0.022
0.41
0.56
BL
0.130
0.146
3.30
3.70
S
0.001 MIN
0.03 MIN
DIM
INCH
MILLIMETER
A
.200
5.08
B
.055
1.40
C
.080
2.03