TGS4306-FC 70-90 GHz SP4T Switch Flip Chip Key Features Bias conditions, OFF: Vd = 1.35 V, Id = 10 mA, State 5 Typical ON: Vd = -5V, Id = 0 mA, State 2 RF IN to RF OUT 2 0 S21 (dB) OFF -30 -40 74 76 78 80 82 84 Frequency (GHz) 86 88 90 * 20 dB Nominal Isolation * 8 dB Typical Thru State Return Loss * < 5 nsec Switching Speed * Integrated DC blocking at RF ports * Chip dimensions: 1.69 x 1.37 x 0.38 mm Primary Applications * Automotive Transceivers * E-Band Transceivers The TGS4306-FC, when flipped, provides a nominal 3.0 dB insertion loss, 8 dB return loss in the thru state, and 20 dB isolation in the automotive band. 0 State 2 Return Loss (dB) 3.0 dB Typical Flipped Insertion Loss The TriQuint TGS4306-FC is a 70-90 GHz SP4T Switch. This part is designed using TriQuint's proven standard VPIN production process. The switching speed for TGS4306FC is < 5 nsec typically. -20 72 * Product Description ON 70 Frequency Range: 70-90 GHz (0.067 x 0.054 x 0.015 in) Measured Performance -10 * -5 The TGS4306-FC integrates DC blocking capacitors on all output ports to reduce the number of off-chip components. -10 -15 The TGS4306-FC has a protective surface passivation layer providing environmental robustness. S11 -20 S22 -25 70 72 74 76 78 80 82 Frequency (GHz) 84 86 88 90 Lead-free and RoHS compliant 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B Table I Absolute Maximum Ratings 1/ SYMBOLS PARAMETER VALUES Vd1,2,3,4 Maximum Supply Voltage -15 V to 2 V Id1,2,3,4 Maximum Supply Current 15 mA Pin Maximum Input Power 27 dBm Tstg Storage Temperature -65 to 150 0C TGS4306-FC NOTES 1/ These ratings represent the maximum operating values for this device. Table II Recommended Operating Conditions Truth Table STATE RF IN to RF OUT 1 RF IN to RF OUT 2 RF IN to RF OUT 3 RF IN To RF OUT 4 Vd1 Vd2 Vd3 Vd4 1 ON OFF OFF OFF -5 V @ 0 mA 1.35 V @ 10 mA 1.35 V @ 10 mA 1.35 V @ 10 mA 2 OFF ON OFF OFF 1.35 V @ 10 mA -5 V @ 0 mA 1.35 V @ 10 mA 1.35 V @ 10 mA 3 OFF OFF ON OFF 1.35 V @ 10 mA 1.35 V @ 10 mA -5 V @ 0 mA 1.35 V @ 10 mA 4 OFF OFF OFF ON 1.35 V @ 10 mA 1.35 V @ 10 mA 1.35 V @ 10 mA -5 V @ 0 mA 5 OFF OFF OFF OFF 1.35 V @ 10 mA 1.35 V @ 10 mA 1.35 V @ 10 mA 1.35 V @ 10 mA 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B TGS4306-FC Table III RF Characterization Table (TA = 25 C, Nominal) Probe Tip Calibration Id = 6 mA typical PARAMETER THROUGH PATH IDENTIFICATION TEST CONDITIONS MINIMUM NOMINAL MAXIMUM UNITS 2.5 4.5 dB Insertion Loss (State 3) RF Input to RF Output 1 RF Input to RF Output 2 RF Input to RF Output 3 RF Input to RF Output 4 F = 76 - 77 GHz Isolation On/off ratio (State 3 / 5) RF Input to RF Output 1 RF Input to RF Output 2 RF Input to RF Output 3 RF Input to RF Output 4 F = 76 - 77 GHz 16 20 dB Input Return Loss (State 3) RF Input to RF Output 1 RF Input to RF Output 2 RF Input to RF Output 3 RF Input to RF Output 4 F = 76 - 77 GHz 5 9 dB Output Return Loss (State 3) RF Input to RF Output 1 RF Input to RF Output 2 RF Input to RF Output 3 RF Input to RF Output 4 F = 76 - 77 GHz 5 9 dB 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B TGS4306-FC Measured Data Insertion Loss RF IN to RF OUT 2 0 State 2 S21 (dB) -1 -2 -3 -4 -5 70 72 74 76 78 80 82 84 86 88 90 84 86 88 90 Frequency (GHz) RF IN to RF OUT 2 0 State 5 S21 (dB) -10 -20 -30 -40 70 72 74 76 78 80 82 Frequency (GHz) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B TGS4306-FC Measured Data Return Loss RF IN to RF OUT 2 0 State 2 IRL, ORL (dB) -5 -10 -15 S11 -20 S22 -25 70 72 74 76 78 80 82 84 86 88 90 84 86 88 90 Frequency (GHz) RF IN to RF OUT2 0 IRL, ORL (dB) -5 State 5 -10 -15 S11 S22 -20 -25 70 72 74 76 78 80 82 Frequency (GHz) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B TGS4306-FC Measured Data Insertion Loss RF IN to RF OUT 4 0 State 4 S21 (dB) -1 -2 -3 -4 -5 70 72 74 76 78 80 82 84 86 88 90 84 86 88 90 Frequency (GHz) RF IN to RF OUT 4 0 State 5 S21 (dB) -10 -20 -30 -40 70 72 74 76 78 80 82 Frequency (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B TGS4306-FC Measured Data RF IN to RF OUT 4 0 State 4 IRL, ORL (dB) -5 -10 -15 S11 S22 -20 -25 70 72 74 76 78 80 82 84 86 88 90 84 86 88 90 Frequency (GHz) RF IN to RF OUT 4 0 IRL, ORL (dB) -5 State 5 -10 -15 S11 S22 -20 -25 70 72 74 76 78 80 82 Frequency (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B TGS4306-FC Electrical Schematic GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B TGS4306-FC Mechanical Drawing Drawing is for chip face up Units: millimeters (inches) Thickness: 0.380 (0.015). Die x, y size tolerance: +/- 0.050 (0.002) Chip edge to pillar dimensions are shown to center of pillar Pillar # 1 RF IN 0.075 Pillar # 5 RF OUT 1 0.075 Pillar # 9 RF OUT 2 0.075 Pillar # 12 RF OUT 3 0.075 Pillar # 16 RF OUT 4 0.075 Pillar # 3 Vd1 0.075 Pillar # 7 Vd2 0.075 Pillar # 14 Vd3 0.075 Pillar # 18 Vd4 0.075 Pillar # 20, 21 DC Ground 0.075 Pillar # 2, 4, 6, 8, 10, 11, 13, 15, 17, 19 RF CPW Ground 0.075 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B TGS4306-FC Recommended Assembly Diagram TGS4306-FC SP4T data represented in this datasheet was taken using co-planar waveguide (CPW) transition on the shown substrate and ground-signal-ground probes. Bypass capacitors not required. Alumina substrate board Thickness: 0.015 in. r = 9.9 RF OUT 1 Vd 2 Vd 1 RF OUT 2 RF IN RF OUT 3 Vd 4 Vd 3 TGS4306-FC SP4T Die RF OUT 4 Die is flip-chip soldered to substrate GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B TGS4306-FC Assembly Notes Component placement and die attach assembly notes: * Vacuum pencils and/or vacuum collets are the preferred method of pick up. * Air bridges must be avoided during placement. * Cu pillars on die are 65 um tall with a 22 um tall Sn solder cap. * Recommended board metallization is evaporated TiW followed by nickel/gold at pillar attach interface. Ni is the adhesion layer for the solder and the gold keeps the Ni from oxidizing. The Au should be kept to a minimum to avoid embrittlement; suggested Au / Sn mass ratio must not exceed 8%. * Au metallization is not recommended on traces due to solder wicking and consumption concerns. If Au traces are used, a physical solder barrier must be applied or designed into the pad area of the board. The barrier must be sufficient to keep the solder from undercutting the barrier. Reflow process assembly notes: * Minimum alloying temperatures 245 C. * Repeating reflow cycles is not recommended due to Sn consumption on the first reflow cycle. * An alloy station or conveyor furnace with an inert atmosphere such as N2 should be used. * Dip copper pillars in "no-clean flip chip" flux prior to solder attach. Suggest using a high temperature flux. Avoid exposing entire die to flux. * If screen printing flux, use small apertures and minimize volume of flux applied. * Coefficient of thermal expansion matching between the MMIC and the substrate/board is critical for long-term reliability. * Devices must be stored in a dry nitrogen atmosphere. * Suggested reflow will depend on board material and density. See Triquint Application Note for flip-chip soldering process: TBD Typical Reflow Profiles for TriQuint Cu / Sn Pillars Process Sn Reflow Ramp-up Rate 3 C/sec Flux Activation Time and Temperature 60 - 120 sec @ 140 - 160 C Time above Melting Point (245 C) 60 - 150 sec Max Peak Temperature 300 C Time within 5 C of Peak Temperature 10 - 20 sec Ramp-down Rate 4 - 6 C/sec Ordering Information Part Package Style TGA4306-FC GaAs MMIC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TriQuint: TGS4306-FC