GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS(ON) ID RDS(ON) Features Package RoHS Compliant 175 C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Integrated SiC Schottky Rectifier Positive temperature coefficient for easy paralleling Low intrinsic device capacitance Low gate charge = = = = 1200 V 1.4 V 10 A 140 m D G D S TO-247AB Advantages Applications Low switching losses High circuit efficiency High temperature operation High short circuit withstand capability Reduced cooling requirements Reduced system size Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Maximum Ratings at Tj = 175 C, unless otherwise specified Parameter Symbol Conditions Values Unit VDS ID IGM VGS = 0 V TC,MAX = 95 C 1200 10 10 ID,max = 10 @ VDS VDSmax V A A SiC Junction Transistor Drain - Source Voltage Continuous Drain Current Gate Peak Current Turn-Off Safe Operating Area RBSOA Short Circuit Safe Operating Area SCSOA Reverse Gate - Source Voltage Reverse Drain - Source Voltage Power Dissipation Storage Temperature VSG VSD Ptot Tstg TVJ = 175 oC, IG = 1 A, Clamped Inductive Load TVJ = 175 oC, IG = 1 A, VDS = 800 V, Non Repetitive TC = 95 C A 20 s 30 25 91 -55 to 175 V V W C A A A Free-wheeling Silicon Carbide diode DC-Forward Current Non Repetitive Peak Forward Current Surge Non Repetitive Forward Current IF IFM TC 150 C TC = 25 C, tP = 10 s IF,SM tP = 10 ms, half sine, TC = 25 C 10 280 65 RthJC RthJC SiC Junction Transistor SiC Diode 0.88 0.85 C/W C/W 0.6 Nm Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - case Mechanical Properties Mounting torque Sep 2013 M http://www.genesicsemi.com/index.php/sic-products/copack Pg1 of 8 GA10SICP12-247 Electrical Characteristics at Tj = 175 C, unless otherwise specified Parameter Symbol Conditions min. Values typ. max. Unit SJT On-State Characteristics Drain - Source On Voltage VDS(ON) Drain - Source On Resistance RDS(ON) Gate Forward Voltage VGS(FWD) DC Current Gain ID = 10 A, IG = 200 mA, Tj = 25 C ID = 10 A, IG = 400 mA, Tj = 125 C ID = 10 A, IG = 800 mA, Tj = 175 C ID = 10 A, IG = 200 mA, Tj = 25 C ID = 10 A, IG = 400 mA, Tj = 125 C ID = 10 A, IG = 800 mA, Tj = 175 C IG = 500 mA, Tj = 25 C IG = 500 mA, Tj = 175 C VDS = 5 V, ID = 10 A, Tj = 25 C VDS = 5 V, ID = 10 A, Tj = 175 C 1.4 1.6 2.2 140 160 220 3.3 3.1 TBD TBD 350 530 700 20 tbd tbd tbd pF pF pF tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd ns ns ns ns J J J 1.55 V 0.8 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd V A ns ns ns J J nC ns ns J J nC V m V SJT Off-State Characteristics Drain Leakage Current IDSS Gate Leakage Current ISG VR = 1200 V, VGS = 0 V, Tj = 25 C VR = 1200 V, VGS = 0 V, Tj = 125 C VR = 1200 V, VGS = 0 V, Tj = 175 C VSG = 20 V, Tj = 25 C Cgs Ciss Crss/Coss VGS = 0 V, f = 1 MHz VGS = 0 V, VD = 1 V, f = 1 MHz VD = 1 V, f = 1 MHz nA nA SJT Capacitance Characteristics Gate-Source Capacitance Input Capacitance Reverse Transfer/Output Capacitance SJT Switching Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets VDD = 800 V, ID = 10 A, RG(on) = RG(off) = tbd , FWD = GB10SLT12, Tj = 25 C Refer to Figure 15 for gate current waveform VDD = 800 V, ID = 10 A, RG(on) = RG(off) = tbd , FWD = GB10SLT12, Tj = 175 C Refer to Figure 15 for gate current waveform ns ns ns J J J Free-wheeling Silicon Carbide Schottky Diode Forward Voltage Diode Knee Voltage Peak Reverse Recovery Current Reverse Recovery Time Rise Time Fall Time Turn-On Energy Loss Per Pulse Turn-Off Energy Loss Per Pulse Reverse Recovery Charge Rise Time Fall Time Turn-On Energy Loss Per Pulse Turn-Off Energy Loss Per Pulse Reverse Recovery Charge Sep 2013 VF VD(knee) Irrm trr tr tf Eon Eoff Qrr tr tf Eon Eoff Qrr IF = 10 A, VGE = 0 V, Tj = 25 C (175 C ) Tj = 25 C, IF = 1 mA IF = 10 A, VGE = 0 V, VR = 800 V, -dIF/dt = 625 A/s, Tj = 175 C VDD= 800 V, ID = 10 A, Rgon = Rgoff = tbd , Tj= 25 C VDD= 800 V, ID = 10 A, Rgon = Rgoff = tbd , Tj= 175 C http://www.genesicsemi.com/index.php/sic-products/copack Pg2 of 8 GA10SICP12-247 Figures TBD Figure 1: Typical Output Characteristics at 25 C TBD Figure 3: Typical Output Characteristics at 175 C TBD Figure 5: Normalized On-Resistance and Current Gain vs. Temperature Sep 2013 TBD Figure 2: Typical Output Characteristics at 125 C TBD Figure 4: Typical Gate Source I-V Characteristics vs. Temperature TBD Figure 6: Typical Blocking Characteristics http://www.genesicsemi.com/index.php/sic-products/copack Pg3 of 8 GA10SICP12-247 TBD Figure 7: Capacitance Characteristics TBD Figure 9: Typical Hard-switched Turn On Waveforms TBD Figure 11: Typical Turn On Energy Losses and Switching Times vs. Temperature Sep 2013 TBD Figure 8: Capacitance Characteristics TBD Figure 10: Typical Hard-switched Turn Off Waveforms TBD Figure 12: Typical Turn Off Energy Losses and Switching Times vs. Temperature http://www.genesicsemi.com/index.php/sic-products/copack Pg4 of 8 GA10SICP12-247 TBD Figure 13: Typical Turn On Energy Losses vs. Drain Current TBD Figure 15: Typical Gate Current Waveform TBD Figure 17: Power Derating Curve 1 TBD Figure 14: Typical Turn Off Energy Losses vs. Drain Current TBD Figure 16: Typical Hard Switched Device Power Loss vs. 1 Switching Frequency TBD Figure 18: Forward Bias Safe Operating Area - Representative values based on device switching energy loss. Actual losses will depend on gate drive conditions, device load, and circuit topology. Sep 2013 http://www.genesicsemi.com/index.php/sic-products/copack Pg5 of 8 GA10SICP12-247 TBD Figure 19: Turn-Off Safe Operating Area TBD Figure 20: Transient Thermal Impedance Figure 21: Typical FWD Forward Characteristics Sep 2013 http://www.genesicsemi.com/index.php/sic-products/copack Pg6 of 8 GA10SICP12-247 Gate Drive Technique (Option #1) To drive the GA10SICP12-247 with the lowest gate drive losses, please refer to the dual voltage source gate drive configuration described in Application Note AN-10B (http://www.genesicsemi.com/index.php/references/notes). Gate Drive Technique (Option #2) The GA10SICP12-247 can be effectively driven using the IXYS IXDN614 / IXDD614 non-inverting gate driver IC or a comparable product. A typical gate driver configuration along with component values using this driver is offered below. Additional information is available in GeneSiC Application Note AN-10A and from the manufacturer at www.ixys.com. VGG (+15 V) VGG (+15 V) EN D VCC OUT IG VO Gate Drive IC RGP IXDN614/ IXDD614 VEE CGP Gate Control Signal IN +5V / 0V SiC SJT Co-pack G S Figure 21: Recommended Gate Diver Configuration (Option #2) Parameter Symbol Conditions min. Values typ. max. Unit Option #2 Gate Drive Conditions (IXDD614/IXDN614) Supply Voltage Gate Control Input Signal, Low Gate Control Input Signal, High Enable, Low Enable, High Output Voltage, Low Output Voltage, High Output Current, Peak Output Current, Continuous VCC IN IN EN EN VOUT VOUT IOUT IOUT -0.3 -5.0 3.0 IXDD614 Only IXDD614 Only 15 0 5.0 40 0.8 VCC+0.3 1/3*VCC 2/3*VCC 0.025 VCC-0.025 tbd tbd Package Limited 14 4.0 V V V V V V V A A Passive Gate Components Gate Resistance Gate Capacitance Sep 2013 RGP CGP IG 0.5 A IG 0.5 A 5 http://www.genesicsemi.com/index.php/sic-products/copack tbd tbd nF Pg7 of 8 GA10SICP12-247 Package Dimensions: TO-247AB PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Revision History Date Revision Comments 2013/09/12 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Sep 2013 http://www.genesicsemi.com/index.php/sic-products/copack Pg8 of 8 GA10SICP12-247 SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA10SICP12-247 device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 20-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/sic-products/copack * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GA10SICP12-247 SPICE Model * .SUBCKT GA10SIPC12 DRAIN GATE SOURCE Q1 DRAIN GATE SOURCE GA10SIPC12_Q D1 SOURCE DRAIN GA10SIPC12_D1 D2 SOURCE DRAIN GA10SIPC12_D2 .model GA10SIPC12_Q NPN + IS 5.00E-47 ISE 1.26E-28 EG 3.2 + BF 100 BR 0.55 IKF 350 + NF 1 NE 2 RB 0.26 + RE 0.01 RC 0.1 CJC 3.5E-10 + VJC 3 MJC 0.5 CJE 1.11E-09 + VJE 3 MJE 0.5 XTI 3 + XTB -1.2 TRC1 7.00E-03 MFG GeneSiC_Semi .MODEL GA10SIPC12_D1 D + IS 4.55E-15 RS 0.0736 N 1 + IKF 1000 EG 1.2 XTI -2 + TRS1 0.005434 TRS2 2.71739E-05 CJO 6.40E-10 + VJ 0.469 M 1.508 FC 0.5 + TT 1.00E-10 .MODEL GA10SIPC12_D2 D + IS 1.54E-22 RS 0.19 TRS1 -0.004 + N 3.941 EG 3.23 IKF 19 + XTI 0 FC 0.5 TT 0 .ENDS * End of GA10SICP12-247 SPICE Model Sep 2013 http://www.genesicsemi.com/index.php/sic-products/copack Pg1 of 1