ITT SEMICOND/ INTERMETALL SOE D MM 4682711 0002955 574 MMISI BA157 ... BA159 JT 93-13 Fast General Purpose Silicon Rectifiers for high speed switching applications, e. g. as clamping diode in colour TV receivers _ leg min.26 max 1, 26 pol 6.65 ra -m || e-max 3.2 a Cathode Mark 08 & These rectifiers are delivered taped. Plastic case Details see Taping. 58 A 2 according to DIN 41 883 Weight approx. 0.4 g Dimensions in mm Absolute Maximum Ratings Symbol Value Unit Repetitive Peak Reverse Voltage BA157 Varm 400 Vv BA158 Verrm 600 Vv BA159 Varn 1000 Vv Average Rectified Current at Tam = 50C Io 19 A Repetitive Peak Forward Current at f >15 Hz, Tamp = 25 C l-FRM g A Surge Forward Current, Half Cycle 50 Hz, starting from T, = 25 C les 35 A Junction Temperature T, 150 c Operating and Storage Temperature Range Tambs Ts 65 to + 150 C Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. 236 ITT SEMICOND/ INTERMETALL SOE D MW 4682711 0002956 400 MHISI BA157 ... BA159 Characteristics Symbol Min. Typ. Max. Unit Forward Voltage Ve _ - 1.3 Vv atl- = 1A, T, = 25C Leakage Current In _ - 5 BA at Var; Tamb = 25 C Capacitance at f = 1 MHz, Vp = 400 V BA157 Crot - 2.2 - pF Vr = 600 V BA158 Crot - 2 - pF Ve = 1000 V BA159 Crot - 1.8 - pF Reverse Recovery Time tr - - 300 ns from I; = 10 mA through I, = 10 mA to Ip = 1 MA Thermal Resistance Rina - - 60") K/W Junction to Ambient Air ) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. Admissible repetitive peak forward current versus pulse duration BA 157... le RM 10% 2 5 1722 5 102 2 5 1o7' 5 1 2 5 105 237 ITT SEMICOND/ INTERMETALL SOE D) mm BA157 ... BA159 4Be?7hl 0002957 347 MBISI Forward characteristics A BA 157. . T= 125C|} | [7=25C WA 10 0, Leakage current versus reverse voltage, T, = 25C BA 157... 7, = 25C | | BA 159 BA 158 L_ BA 157 Lr La pa La" 0 500 1000 V Forward voltage versus junction temperature 200 C V BA 157... 2 ye tense tb Ir = 0,1 A || ~e ML Tb es 001 | i Sh i-=0,001 A 0 0 100 > 7; 100 10 Leakage current versus reverse voltage, T; = 125C BA 157... 7, =125C t~ BA 159 t- BA 158 La Let 0 500 1000 V R 238 ITT SEMICOND/ INTERMETALL SOE D MM 4682711 0002958 283 MHISI BA157 ... BA159 Leakage current Thermal resistance versus junction temperature versus lead length pA BA 157. . K/W BA 157... 100 ty 100 BA1S7: Vg = 400 V 5 [BAIS8:V, = 600V, V4 90 BA 159: Vp =1000V ) Ip 3 Rin 80 YY max. / 70 10 7 Lt | / 60 5 Y 50 | | _t TYP. 3 / Le / 40 i 30 5 / 20 4 2 10 0, 0 0 50 100 125C 0 5 10 5 20 25mm oo od jj 1 lead length / Capacitance versus reverse voltage pF BA 157... 100 T T T, =25C 5 Crot 2 10 N N Ss N aN 2 IN NJ 1 N 1 10 102 103 10% V 239