Radar Pulsed Power Transistor
30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products
Released, 30 May 07
MAPRST1214-30UF
1
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Outline Drawing
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter Test Conditions Frequency Symbol Min Max Units
Collector-Emitter Breakdown Voltage IC = 10mA BVCES 70 - V
Collector-Emitter Leakage Current VCE = 40V ICES - 2.0 mA
Thermal Resistance Vcc = 36V, Pin = 5.3W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 1.2 °C/W
Output Power Vcc = 36V, Pin = 5.3W F = 1.2, 1.3, 1.4 GHz POUT 30 - W
Power Gain Vcc = 36V, Pin = 5.3W F = 1.2, 1.3, 1.4 GHz GP 7.5 - dB
Collector Efficiency Vcc = 36V, Pin = 5.3W F = 1.2, 1.3, 1.4 GHz ηC 45 - %
Input Return Loss Vcc = 36V, Pin = 5.3W F = 1.2, 1.3, 1.4 GHz RL - -9 dB
Pulse Droop Vcc = 36V, Pin = 5.3W F = 1.2, 1.3, 1.4 GHz Droop - 0.5 dB
Load Mismatch Tolerance Vcc = 36V, Pin = 5.3W F = 1.2, 1.3, 1.4 GHz VSWR-T - 3:1 -
Load Mismatch Stability Vcc = 36V, Pin = 5.3W F = 1.2, 1.3, 1.4 GHz VSWR-S - 1.5:1 -
Gain Flatness Vcc = 36V, Pin = 5.3W F = 1.2, 1.3, 1.4 GHz ΔG - 1.25 dB
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 70 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 5.0 A
Power Dissipation @ +25°C PTOT 145 W
Storage Temperature TSTG -65 to +200 °C
Junction Temperature TJ 200 °C
Radar Pulsed Power Transistor
30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products
Released, 30 May 07
MAPRST1214-30UF
2
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical RF Performance
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(3:1)
1.2 5.3 39.4 8.71 2.08 52.6 -12.3 S P
1.3 5.3 39.7 8.75 1.98 55.6 -14.6 S P
1.4 5.3 39.9 8.77 1.92 57.8 -15.0 S P
Droop
(dB)
0.24
0.20
0.17
Gain vs. Frequency Collector Efficiency vs. Frequency
7.0
7.5
8.0
8.5
9.0
1.20 1.25 1.30 1.35 1.40
Fr e q (GHz)
Gain (dB)
45
50
55
60
65
1.20 1.25 1.30 1.35 1.40
Fr e q (GHz)
Efficiency (%)
F (GHz) ZIF (Ω) ZOF (Ω)
1.2 6.7 - j6.9 14.3 + j2.4
1.3 6.5 - j6.5 11.2 - j0.8
1.4 6.3 - j4.5 7.2 - j0.1
RF Test Fixture Impedance
Radar Pulsed Power Transistor
30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products
Released, 30 May 07
MAPRST1214-30UF
3
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Test Fixture Circuit Dimensions
Test Fixture Assembly
