Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. * Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) 350 W (PEAK) 1025-1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Hermetically Sealed Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input and Output Matching * Characterized using Mode-S Pulse Format CASE 355E-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 65 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage VEBO 3.5 Vdc Collector Current -- Peak (1) IC 31 Adc Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C PD 1590 9.1 Watts W/C Storage Temperature Range Tstg -65 to +200 C Junction Temperature TJ 200 C Symbol Max Unit RJC 0.11 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case JC measured using Mode-S pulse train, 128 s burst 0.5 s on, 0.5 s off repeating at 6.4 ms interval.) REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF10350 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 -- -- Vdc Collector-Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 25 mAdc hFE 20 -- -- -- Common-Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) GPB 8.5 9.0 -- dB Collector Efficiency (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) 40 -- -- % Load Mismatch (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS No Degradation in Output Power * &% # "&% * * * * * * * * # !&%"&% Z1-Z9 -- Microstrip, See Details Board Material -- Teflon, Glass Laminate Dielectric Thickness = 0.030 Dr = 2.55, 2 Oz. Copper C1 -- 75 pF 100 Mil Chip Capacitor C2 -- 39 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 100 F, 100 Vdc, Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long Figure 1. Test Circuit MRF10350 2 MOTOROLA RF DEVICE DATA "!&% !&%"&%"!(#(%%$ / B ' ' ">5<. 8-.$ " "&% "!(# (%%$ (1) 128 s burst 0.5 s on, 0.5 s off (1) repeating at 6.4 ms interval. Figure 2. Output Power versus Input Power *27 *! *8 / B / B "!&% ( "4D' ' / B *27 !$ *!C !$ 3 3 3 3 3 3 3 3 3 3 *! 2< =1. ,873>0+=. 8/ =1. 89=26>6 58+269.-+7,. 27=8 @12,1 =1. -.?2,. 89.;+=.< += + 02?.7 8>=9>= 98@.; ?85=+0. +7- /;.:>.7,A Figure 3. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF10350 3 PACKAGE DIMENSIONS -A- M U Q 2 PL % -B- R K 2 PL D J E N C H !%$ $! %!# "# $ ) ! %#! $! -T- # $ # $ $%) " !%!# %%# $ CASE 355E-01 ISSUE B Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF10350 4 MRF10350/D MOTOROLA RF DEVICE DATA