1
MRF10350MOTOROLA RF DEVICE DATA
The RF Line
Designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
•Guaranteed Performance @ 1090 MHz
Output Power = 350 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•Hermetically Sealed Package
•Silicon Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•Internal Input and Output Matching
•Characterized using Mode–S Pulse Format
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCES 65 Vdc
Collector–Base Voltage VCBO 65 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Peak (1) IC31 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°CPD1590
9.1 Watts
W/°C
Storage Temperature Range Tstg –65 to +200 °C
Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) RθJC 0.11 °C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case θJC measured
using Mode–S pulse train, 128 µs burst 0.5 µs on, 0.5 µs of f repeating at 6.4 ms interval.)
Order this document
by MRF10350/D
SEMICONDUCTOR TECHNICAL DATA
350 W (PEAK)
1025–1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355E–01, STYLE 1
Motorola, Inc. 1995
REV 1
MRF10350
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 — — Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc
Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ICBO — — 25 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20 — — —
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) GPB 8.5 9.0 — dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) η40 — — %
Load Mismatch
(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψNo Degradation in Output Power
Figure 1. Test Circuit
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
εr = 2.55, 2 Oz. Copper
3
MRF10350MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power
Figure 3. Series Equivalent Input/Output Impedances
(1) 128 µs burst 0.5 µs on, 0.5 µs off
(1) repeating at 6.4 ms interval.
Ω
MRF10350
4MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 355E–01
ISSUE B
D
E
J
H
M
U
R
–A–
–B–
Q2 PL
K
N
C
–T–
2 PL
How to reach us:
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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MRF10350/D
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