5.5 GHz to 8.6 GHz, GaAs, MMIC, I/Q Upconverter HMC6505A Data Sheet VCTRL IF1 GND IF2 GND FUNCTIONAL BLOCK DIAGRAM VDD1 VDD2 VDD3 RFOUT GND HMC6505A GND EPAD 13900-001 LOIN VGG GND Conversion gain: 15 dB typical Sideband rejection: 22 dBc typical Output P1dB compression at maximum gain: 22 dBm typical Output IP3 at maximum gain: 35 dBm typical LO to RF isolation: 4 dB typical LO to IF isolation: 9 dB typical RF return loss: 20 dB typical LO return loss: 10 dB typical IF return loss: 20 dB typical Exposed paddle, 5 mm x 5 mm, 32-terminal, leadless chip carrier package GND FEATURES Figure 1. APPLICATIONS Point to point and point to multipoint radios Military radars, electronic warfare (EW), and electronic intelligence (ELINT) Satellite communications Sensors GENERAL DESCRIPTION The HMC6505A is a compact gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant package that operates from 5.5 GHz to 8.6 GHz. This device provides a small signal conversion gain of 15 dB with 22 dBc of sideband rejection. The HMC6505A uses a variable gain amplifier (VGA) preceded by an in-phase and quadrature (I/Q) mixer that is driven by an active local oscillator (LO). The IF1 and IF2 mixer inputs are provided, and an external 90 hybrid is needed to select the required sideband. The I/Q mixer topology reduces Rev. 0 the need for filtering of unwanted sideband. The HMC6505A is a smaller alternative to hybrid style single sideband (SSB) upconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques. The HMC6505A is available in 5 mm x 5 mm, 32-terminal leadless chip carrier (LCC) package and operates over a -40C to +85C temperature range. An evaluation board for the HMC6505A is also available upon request. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 (c)2017 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC6505A Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Applications ....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Specifications..................................................................................... 3 Absolute Maximum Ratings ............................................................ 4 Thermal Resistance ...................................................................... 4 ESD Caution .................................................................................. 4 Pin Configuration and Function Descriptions ............................. 5 Interface Schematics..................................................................... 6 Typical Performance Characteristics ............................................. 7 IF = 350 MHz, IF Input Power = -6 dBm, Lower Sideband (High-Side LO) ............................................................................. 7 IF = 1000 MHz, IF Input Power = -6 dBm, Lower Sideband (High-Side LO) ............................................................................. 9 IF = 350 MHz, IF Input Power = -6 dBm, Upper Sideband (Low-Side LO) ............................................................................ 14 IF = 1000 MHz, IF Input Power = -6 dBm, Upper Sideband (Low-Side LO) ............................................................................ 16 IF= 2500 MHz, IF Input Power = -6 dBm, Upper Sideband (Low-Side LO) ............................................................................ 18 Isolation and Return Loss ......................................................... 20 IF Bandwidth Performance: Lower Sideband (High-Side LO) . 23 Spurious Performance ............................................................... 24 Theory of Operation ...................................................................... 26 Applications Information .............................................................. 27 Typical Application Circuit ....................................................... 27 Evaluation Board Information.................................................. 28 Outline Dimensions ....................................................................... 30 Ordering Guide .......................................................................... 30 IF= 2500 MHz, IF Input Power = -6 dBm, Lower Sideband (High-Side LO) ........................................................................... 11 REVISION HISTORY 8/2017--Revision 0: Initial Version Rev. 0 | Page 2 of 30 Data Sheet HMC6505A SPECIFICATIONS TA = 25C, IF = 350 MHz, VDDx = 5 V, VCTRL = -4 V, LO power = 4 dBm. Measurements performed with lower sideband selected and external 90 hybrid at the IF ports, unless otherwise noted. Table 1. Parameter OPERATING CONDITIONS Frequency Range Radio Frequency Local Oscillator Intermediate Frequency Control Voltage Range LO Drive Range PERFORMANCE Conversion Gain Dynamic Range Sideband Rejection Output Power for 1 dB Compression at Maximum Gain Output Third-Order Intercept at Maximum Gain Isolation LO to RF LO to IF Noise Figure Return Loss RF LO IF POWER SUPPLY Total Supply Current LO Amplifier RF Amplifier Symbol Min RF LO IF VCTRL 5.5 2.5 DC -4 -2 12 20 18 OP1dB OIP3 31 -1 NF IDD1 IDD2, IDD3 Rev. 0 | Page 3 of 30 Typ Max Unit +4 8.6 11.6 3 0 +6 GHz GHz GHz V dBm 15 25 22 22 35 dB dB dBc dBm dBm +4 9 15 dB dB dB 20 10 20 dB dB dB 125 120 mA mA HMC6505A Data Sheet ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 2. Parameter Drain Bias Voltage (VDD1, VDD2, and VDD3) Gate Bias Voltage VGG VCTRL Input Power LO IF Moisture Sensitivity Level (MSL) Rating1 Maximum Junction Temperature Storage Temperature Range Operating Temperature Range Reflow Temperature Electrostatic Discharge Sensitivity Human Body Model (HBM) Field Induced Charged Device Model (FICDM) 1 Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required. Rating 5.5 V -3 V to 0 V -5 V to +0.3 V 10 dBm 20 dBm MSL3 175C -65C to +150C -40C to +85C 260C Table 3. Thermal Resistance Package Type E-32-11 1 JA 66.7 JC 54.6 Unit C/W Thermal impedance simulated values are based on JEDEC 2S2P test board with 5 x 5 thermal vias. Refer to JDEC standard JESD51-2 for additional information. ESD CAUTION 500 V 750 V See the Ordering Guide. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. 0 | Page 4 of 30 Data Sheet HMC6505A 32 31 30 29 28 27 26 25 NIC GND IF2 GND IF1 GND VCTRL NIC PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 1 2 3 4 5 6 7 8 HMC6505A TOP VIEW (Not to Scale) 24 23 22 21 20 19 18 17 NIC VDD2 NIC NIC NIC NIC VDD3 NIC NOTES 1. NOT INTERNALLY CONNECTED. THESE PINS ARE NOT CONNECTED INTERNALLY. HOWEVER, PINS MAY BE CONNECTED TO RF/DC GROUND WITHOUT AFFECTING PERFORMANCE. 2. EXPOSED PAD. CONNECT TO A LOW IMPEDANCE THERMAL AND ELECTRICAL GROUND PLANE. 13900-002 NIC 9 NIC 10 NIC 11 VGG 12 GND 13 RFOUT 14 GND 15 NIC 16 NIC NIC NIC NIC VDD1 NIC LOIN GND Figure 2. Pin Configuration Table 4. Pin Function Descriptions Pin No. 1 to 4, 6, 9 to 11, 16, 17, 19 to 22, 24, 25, 32 5 Mnemonic NIC Description Not Internally Connected. These pins are not connected internally. However, pins may be connected to RF/dc ground without affecting performance. VDD1 7 LOIN 8, 13, 15, 27, 29, 31 GND Power Supply Voltage for LO Amplifier. See Figure 3 for the interface schematic. Refer to the typical application circuit (see Figure 103) for the required external components. Local Oscillator Input. See Figure 4 for the interface schematic. This pin is ac-coupled and matched to 50 . Ground Connect. See Figure 5 for the interface schematic. These pins and package bottom must be connected to RF/dc ground. 12 VGG 14 RFOUT 18, 23 VDD3, VDD2 26 VCTRL 28, 30 IF1, IF2 EPAD Gate Voltage for the Variable Gain Amplifier. See Figure 6 for the interface schematic. Refer to the typical application circuit (see Figure 103) for the required external components. Radio Frequency Output. See Figure 7 for the interface schematic. This pin is ac-coupled and matched to 50 . Power Supply Voltage for the Variable Gain Amplifier. See Figure 8 for the interface schematic. Refer to the typical application circuit (see Figure 103) for the required external components. Gain Control Voltage for the Variable Gain Amplifier. See Figure 9 for the interface schematic. Refer to the typical application circuit (see Figure 103) for the required external components. Quadrature Intermediate Frequency Inputs. See Figure 10 for the interface schematic. For applications not requiring operation to dc, use an off chip dc blocking capacitor. For operation to dc, these pins must not source or sink more than 3 mA of current or device malfunction and failure can result. Exposed Pad. Connect to a low impedance thermal and electrical ground plane. Rev. 0 | Page 5 of 30 HMC6505A Data Sheet INTERFACE SCHEMATICS RFOUT Figure 3. VDD1 Interface 13900-007 13900-003 VDD1 Figure 7. RFOUT Interface Figure 4. LOIN Interface 13900-005 VCTRL Figure 5. GND Interface IF1, IF2 13900-006 VGG Figure 9. VCTRL Interface 13900-010 GND Figure 8. VDD2, VDD3 Interface 13900-009 LOIN 13900-008 13900-004 VDD2, VDD3 Figure 10. IF1, IF2 Interface Figure 6. VGG Interface Rev. 0 | Page 6 of 30 Data Sheet HMC6505A TYPICAL PERFORMANCE CHARACTERISTICS IF = 350 MHz, IF INPUT POWER = -6 dBm, LOWER SIDEBAND (HIGH-SIDE LO) 20 40 +85C +25C -40C 18 SIDEBAND REJECTION (dBc) 14 12 10 8 6 4 25 20 15 10 8.0 7.5 8.5 9.0 RF FREQUENCY (GHz) Figure 11. Conversion Gain vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 20 7.0 6.5 8.0 7.5 8.5 9.0 RF FREQUENCY (GHz) 40 35 SIDEBAND REJECTION (dBc) 16 6.0 Figure 14. Sideband Rejection vs. RF Frequency over Temperatures, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 18 0 5.5 13900-014 7.0 6.5 6.0 13900-011 0 5.5 14 12 10 8 6 4 30 -2dBm 0dBm +2dBm +4dBm +6dBm 25 20 15 10 5 2 6.0 6.5 7.0 7.5 8.0 9.0 8.5 RF FREQUENCY (GHz) 0 5.5 13900-012 0 5.5 15 5 0 -5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 8.5 9.0 20 15 10 5 0 -5.0 13900-013 -4.5 8.0 25 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz 10 -10 -5.0 7.5 Figure 15. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V SIDEBAND REJECTION (dBc) RF RF RF RF 7.0 6.5 RF FREQUENCY (GHz) Figure 12. Conversion Gain vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 20 6.0 13900-015 CONVERSION GAIN (dB) 30 5 2 CONVERSION GAIN (dB) +85C +25C -40C RF RF RF RF -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) Figure 13. Conversion Gain vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Figure 16. Sideband Rejection vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 7 of 30 0 13900-016 CONVERSION GAIN (dB) 16 35 HMC6505A Data Sheet 50 30 +85C +25C -40C +85C +25C -40C 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 45 28 40 35 30 24 22 20 18 16 14 25 6.0 7.0 6.5 8.0 7.5 8.5 9.0 RF FREQUENCY (GHz) 10 5.5 13900-017 20 5.5 30 28 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 7.0 7.5 8.0 8.5 9.0 Figure 20. Output P1dB vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 45 6.5 RF FREQUENCY (GHz) Figure 17. Output IP3 vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 50 6.0 13900-020 12 40 35 30 24 -2dBm 0dBm +2dBm +4dBm +6dBm 22 20 18 16 14 25 6.0 7.0 6.5 7.5 8.0 8.5 9.0 RF FREQUENCY (GHz) 10 5.5 13900-018 20 5.5 50 35 30 25 20 15 0 -5.0 -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 VOLTAGE CONTROL (V) 13900-019 OUTPUT IP3 (dBm) 40 5 7.0 7.5 8.0 8.5 Figure 21. Output P1dB vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 45 RF RF RF RF 6.5 RF FREQUENCY (GHz) Figure 18. Output IP3 vs. RF Frequency over LO Powers TA = 25C, Voltage Control = -4 V 10 6.0 Figure 19. Output IP3 vs. Voltage Control over RF Frequencies, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 8 of 30 9.0 13900-021 12 Data Sheet HMC6505A IF = 1000 MHz, IF INPUT POWER = -6 dBm, LOWER SIDEBAND (HIGH-SIDE LO) 20 40 +85C +25C -40C 18 35 SIDEBAND REJECTION (dBc) 14 12 10 8 6 4 20 15 10 8.5 9.0 RF FREQUENCY (GHz) Figure 22. Conversion Gain vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 20 10 8 6 4 2 7.5 8.0 8.5 9.0 25 20 15 10 RF FREQUENCY (GHz) 0 5.5 13900-023 7.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Figure 26. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 40 20 35 SIDEBAND REJECTION (dBc) 15 10 5 0 RF RF RF RF -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 30 25 20 15 10 5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 0 -5.0 13900-024 -10 -5.0 -2dBm 0dBm +2dBm +4dBm +6dBm RF FREQUENCY (GHz) Figure 23. Conversion Gain vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V -5 9.0 30 5 6.5 8.5 35 12 6.0 8.0 40 14 0 5.5 7.5 7.0 RF FREQUENCY (GHz) SIDEBAND REJECTION (dBc) 16 6.5 6.0 Figure 25. Sideband Rejection vs. RF Frequency over Temperatures, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 18 0 5.5 13900-025 8.0 7.5 7.0 13900-026 6.5 6.0 13900-022 0 5.5 CONVERSION GAIN (dB) 25 5 2 CONVERSION GAIN (dB) 30 RF RF RF RF -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) Figure 24. Conversion Gain vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Figure 27. Sideband Rejection vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 9 of 30 0 13900-027 CONVERSION GAIN (dB) 16 +85C +25C -40C HMC6505A Data Sheet 50 30 +85C +25C -40C 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 45 28 40 35 30 +85C +25C -40C 24 22 20 18 16 14 25 6.0 7.5 7.0 6.5 8.0 8.5 9.0 RF FREQUENCY (GHz) 10 5.5 13900-028 20 5.5 30 28 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 7.0 7.5 8.0 8.5 9.0 Figure 31. Output P1dB vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 45 6.5 RF FREQUENCY (GHz) Figure 28. Output IP3 vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 50 6.0 13900-031 12 40 35 30 24 -2dBm 0dBm +2dBm +4dBm +6dBm 22 20 18 16 14 25 6.0 7.0 6.5 7.5 8.0 8.5 9.0 RF FREQUENCY (GHz) 10 5.5 13900-029 20 5.5 50 35 30 25 20 15 0 -5.0 -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 13900-030 OUTPUT IP3 (dBm) 40 5 7.0 7.5 8.0 8.5 Figure 32. Output P1dB vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 45 RF RF RF RF 6.5 RF FREQUENCY (GHz) Figure 29. Output IP3 vs. RF Frequency over LO Powers TA = 25C, Voltage Control = -4 V 10 6.0 Figure 30. Output IP3 vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 10 of 30 9.0 13900-032 12 Data Sheet HMC6505A IF= 2500 MHz, IF INPUT POWER = -6 dBm, LOWER SIDEBAND (HIGH-SIDE LO) 20 18 35 SIDEBAND REJECTION (dBc) 16 14 12 10 8 6 4 30 25 20 15 10 6.5 6.0 8.0 7.5 7.0 8.5 9.0 RF FREQUENCY (GHz) 0 5.5 13900-034 0 5.5 Figure 33. Conversion Gain vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 40 35 SIDEBAND REJECTION (dBc) 14 8.0 7.5 8.5 9.0 Figure 36. Sideband Rejection vs. RF Frequency over Temperatures, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 16 7.0 6.5 RF FREQUENCY (GHz) 20 18 6.0 13900-037 5 2 CONVERSION GAIN (dB) +85C +25C -40C 12 10 8 6 4 30 -2dBm 0dBm +2dBm +4dBm +6dBm 25 20 15 10 5 2 6.0 7.0 6.5 7.5 8.0 8.5 9.0 RF FREQUENCY (GHz) 0 5.5 13900-035 0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 RF FREQUENCY (GHz) Figure 34. Conversion Gain vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 13900-038 CONVERSION GAIN (dB) 40 +85C +25C -40C Figure 37. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 50 20 45 5 0 -5 -10 -5.0 RF RF RF RF -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 40 35 30 25 20 15 10 5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 0 -5.0 RF RF RF RF -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) Figure 35. Conversion Gain vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Figure 38. Sideband Rejection vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 11 of 30 0 13900-039 SIDEBAND REJECTION (dBc) 10 13900-036 CONVERSION GAIN (dB) 15 HMC6505A Data Sheet 50 30 +85C +25C -40C 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 45 28 40 35 30 +85C +25C -40C 24 22 20 18 16 14 25 6.0 7.5 7.0 6.5 8.5 8.0 9.0 RF FREQUENCY (GHz) 10 5.5 13900-040 20 5.5 30 28 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 7.0 7.5 8.0 8.5 9.0 Figure 42. Output P1dB vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 45 6.5 RF FREQUENCY (GHz) Figure 39. Output IP3 vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 50 6.0 13900-043 12 40 35 30 24 -2dBm 0dBm +2dBm +4dBm +6dBm 22 20 18 16 14 25 6.0 7.0 6.5 7.5 8.0 8.5 9.0 RF FREQUENCY (GHz) 10 5.5 13900-041 20 5.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz 35 30 25 20 15 10 5 0 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 13900-042 OUTPUT IP3 (dBm) 40 7.0 7.5 8.0 8.5 Figure 43. Output P1dB vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 50 RF RF RF RF 6.5 RF FREQUENCY (GHz) Figure 40. Output IP3 vs. RF Frequency over LO Powers TA = 25C, Voltage Control = -4 V 45 6.0 Figure 41. Output IP3 vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 12 of 30 9.0 13900-044 12 Data Sheet 18 16 14 14 NOISE FIGURE (dB) 16 12 10 8 6 12 10 8 6 4 4 2 2 0 5.5 6.0 6.5 7.0 7.5 8.0 RF FREQUENCY (GHz) 8.5 9.0 0 5.5 13900-244 NOISE FIGURE (dB) 18 20 -40C +25C +85C -2dBm 0dBm +2dBm +4dBm +6dBm 6.0 6.5 7.0 7.5 8.0 8.5 RF FREQUENCY (GHz) Figure 44. Noise Figure vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V Figure 45. Noise Figure vs. RF Frequency over LO Powers TA = 25C, Voltage Control = -4 V Rev. 0 | Page 13 of 30 9.0 13900-245 20 HMC6505A HMC6505A Data Sheet IF = 350 MHz, IF INPUT POWER = -6 dBm, UPPER SIDEBAND (LOW-SIDE LO) 20 18 35 SIDEBAND REJECTION (dBc) 16 14 12 10 8 6 4 25 20 15 10 8.5 8.0 9.0 RF FREQUENCY (GHz) 0 5.5 Figure 46. Conversion Gain vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 40 35 SIDEBAND REJECTION (dBc) 16 14 12 10 8 -2dBm 0dBm +2dBm +4dBm +6dBm 0 5.5 6.5 6.0 7.0 7.5 8.5 8.0 9.0 RF FREQUENCY (GHz) -2dBm 0dBm +2dBm +4dBm +6dBm 25 20 15 10 6.0 6.5 7.0 8.0 7.5 8.5 9.0 Figure 50. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 40 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz 35 SIDEBAND REJECTION (dBc) 15 9.0 RF FREQUENCY (GHz) 20 10 5 0 -5 RF RF RF RF = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz 30 25 20 15 10 5 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 0 -5.0 13900-048 -10 -5.0 30 0 5.5 Figure 47. Conversion Gain vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V RF RF RF RF 8.5 5 13900-047 2 8.0 7.5 Figure 49. Sideband Rejection vs. RF Frequency over Temperatures, Voltage Control = -4 V 18 4 7.0 6.5 RF FREQUENCY (GHz) 20 6 6.0 13900-049 7.5 7.0 6.5 13900-050 6.0 13900-046 0 5.5 CONVERSION GAIN (dB) 30 5 2 CONVERSION GAIN (dB) +85C +25C -40C -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) Figure 48. Conversion Gain vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Figure 51. Sideband Rejection vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 14 of 30 0 13900-051 CONVERSION GAIN (dB) 40 +85C +25C -40C Data Sheet HMC6505A 50 30 +85C +25C -40C 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 45 28 40 35 30 +85C +25C -40C 24 22 20 18 16 14 25 6.5 6.0 7.5 7.0 8.5 8.0 9.0 RF FREQUENCY (GHz) 10 5.5 13900-052 20 5.5 30 28 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 7.0 7.5 8.0 8.5 9.0 Figure 55. Output P1dB vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 45 6.5 RF FREQUENCY (GHz) Figure 52. Output IP3 vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 50 6.0 13900-055 12 40 35 30 -2dBm 0dBm +2dBm +4dBm +6dBm 24 22 20 18 16 14 25 6.5 6.0 7.0 8.0 7.5 8.5 9.0 RF FREQUENCY (GHz) 10 5.5 13900-053 20 5.5 50 RF RF RF RF = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz 35 30 25 20 15 10 5 0 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 7.0 7.5 8.0 8.5 Figure 56. Output P1dB vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 0 13900-054 OUTPUT IP3 (dBm) 40 6.5 RF FREQUENCY (GHz) Figure 53. Output IP3 vs. RF Frequency over LO Powers TA = 25C, Voltage Control = -4 V 45 6.0 Figure 54. Output IP3 vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 15 of 30 9.0 13900-056 12 HMC6505A Data Sheet IF = 1000 MHz, IF INPUT POWER = -6 dBm, UPPER SIDEBAND (LOW-SIDE LO) 20 18 14 12 10 8 6 4 2 35 30 25 20 15 10 8.0 8.5 9.0 0 5.5 Figure 57. Conversion Gain vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 6.0 6.5 7.0 7.5 8.0 8.5 Figure 60. Sideband Rejection vs. RF Frequency over Temperatures, Voltage Control = -4 V 20 50 -2dBm 0dBm +2dBm +4dBm +6dBm 16 14 -2dBm 0dBm +2dBm +4dBm +6dBm 45 SIDEBAND REJECTION (dBc) 18 9.0 RF FREQUENCY (GHz) 13900-060 7.5 7.0 6.5 13900-057 6.0 RF FREQUENCY (GHz) 12 10 8 6 4 2 40 35 30 25 20 15 10 7.0 7.5 8.0 8.5 9.0 RF FREQUENCY (GHz) 0 5.5 13900-058 6.5 6.0 15 50 SIDEBAND REJECTION (dBc) 60 10 5 0 -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 7.5 8.0 8.5 9.0 40 30 20 10 0 -5.0 13900-059 -10 -5.0 7.0 Figure 61. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 20 RF RF RF RF 6.5 RF FREQUENCY (GHz) Figure 58. Conversion Gain vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V -5 6.0 13900-061 5 0 5.5 RF RF RF RF -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) Figure 59. Conversion Gain vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Figure 62. Sideband Rejection vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 16 of 30 0 13900-062 CONVERSION GAIN (dB) 40 5 0 5.5 CONVERSION GAIN (dB) +85C +25C -40C 45 SIDEBAND REJECTION (dBc) 16 CONVERSION GAIN (dB) 50 +85C +25C -40C Data Sheet HMC6505A 50 30 +85C +25C -40C 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 45 28 40 35 30 +85C +25C -40C 24 22 20 18 16 14 25 6.5 6.0 7.5 7.0 8.0 8.5 9.0 RF FREQUENCY (GHz) 10 5.5 13900-063 20 5.5 30 28 26 OUTPUT P1dB (dBm) OUTPUT IP3 (dBm) 7.0 7.5 8.0 8.5 9.0 Figure 66. Output P1dB vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 45 6.5 RF FREQUENCY (GHz) Figure 63. Output IP3 vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 50 6.0 13900-066 12 40 35 30 -2dBm 0dBm +2dBm +4dBm +6dBm 24 22 20 18 16 14 25 6.5 6.0 7.0 8.0 7.5 8.5 9.0 RF FREQUENCY (GHz) 10 5.5 13900-064 20 5.5 50 35 30 25 20 15 0 -5.0 -4.5 = 8.5GHz = 7.5GHz = 6.5GHz = 5.5GHz -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 13900-065 OUTPUT IP3 (dBm) 40 5 7.0 7.5 8.0 8.5 Figure 67. Output P1dB vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 45 RF RF RF RF 6.5 RF FREQUENCY (GHz) Figure 64. Output IP3 vs. RF Frequency over LO Powers TA = 25C, Voltage Control = -4 V 10 6.0 Figure 65. Output IP3 vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 17 of 30 9.0 13900-067 12 HMC6505A Data Sheet IF= 2500 MHz, IF INPUT POWER = -6 dBm, UPPER SIDEBAND (LOW-SIDE LO) 20 18 14 12 10 8 6 4 2 55 50 45 40 35 30 9.0 Figure 68. Conversion Gain vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 20 14 8.0 7.5 9.0 8.5 RF FREQUENCY (GHz) 70 -2dBm 0dBm +2dBm +4dBm +6dBm 65 SIDEBAND REJECTION (dBc) 16 7.0 Figure 71. Sideband Rejection vs. RF Frequency over Temperatures, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 18 20 6.5 13900-071 8.5 8.0 13900-068 7.5 7.0 RF FREQUENCY (GHz) 12 10 8 6 4 2 60 55 50 45 40 35 30 8.0 8.5 9.0 RF FREQUENCY (GHz) 20 6.5 13900-069 7.5 7.0 8.5 8.0 9.0 Figure 72. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 80 RF = 8.5GHz RF = 7.5GHz RF = 6.5GHz 75 70 SIDEBAND REJECTION (dBc) 15 7.5 RF FREQUENCY (GHz) Figure 69. Conversion Gain vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 20 7.0 13900-072 25 0 6.5 10 5 0 -5 RF = 8.5GHz RF = 7.5GHz RF = 6.5GHz 65 60 55 50 45 40 35 30 -10 25 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 20 -5.0 13900-070 -15 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) Figure 73. Sideband Rejection vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Figure 70. Conversion Gain vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 18 of 30 0 13900-073 CONVERSION GAIN (dB) 60 25 0 6.5 CONVERSION GAIN (dB) +85C +25C -40C 65 SIDEBAND REJECTION (dBc) 16 CONVERSION GAIN (dB) 70 +85C +25C -40C Data Sheet HMC6505A 50 30 +85C +25C -40C 45 28 26 OUTPUT P1dB (dBm) 35 30 25 20 20 18 16 9.0 8.5 RF FREQUENCY (GHz) 10 6.5 13900-074 8.0 7.5 7.0 30 28 26 OUTPUT P1dB (dBm) 40 8.0 8.5 9.0 Figure 77. Output P1dB vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm 45 7.5 RF FREQUENCY (GHz) Figure 74. Output IP3 vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 50 7.0 13900-077 12 10 6.5 OUTPUT IP3 (dBm) 22 14 15 35 30 25 20 -2dBm 0dBm +2dBm +4dBm +6dBm 24 22 20 18 16 14 15 12 7.5 7.0 8.0 9.0 8.5 RF FREQUENCY (GHz) 10 6.5 13900-075 10 6.5 50 40 35 30 25 20 15 10 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VOLTAGE CONTROL (V) 0 13900-076 5 0 -5.0 7.5 8.0 8.5 Figure 78. Output P1dB vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V RF = 8.5GHz RF = 7.5GHz RF = 6.5GHz 45 7.0 RF FREQUENCY (GHz) Figure 75. Output IP3 vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V OUTPUT IP3 (dBm) 24 Figure 76. Output IP3 vs. Voltage Control over RF, TA = 25C, LO Power = 4 dBm Rev. 0 | Page 19 of 30 9.0 13900-078 OUTPUT IP3 (dBm) 40 +85C +25C -40C HMC6505A Data Sheet ISOLATION AND RETURN LOSS 18 14 12 10 8 6 12 10 8 6 4 2 2 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Figure 79. LO to IF1 Isolation vs. LO Frequency over Temperatures, IF = 350 MHz, LO Power = 4 dBm, Voltage Control = -4 V 20 18 0 5.0 20 18 LO TO IF2 ISOLATION (dB) 14 12 10 8 6 16 8.5 9.0 9.5 10.0 LO FREQUENCY (GHz) Figure 80. LO to IF2 Isolation vs. LO Frequency over Temperatures, IF = 350 MHz, LO Power = 4 dBm, Voltage Control = -4 V 20 10.0 -2dBm 0dBm +2dBm +4dBm +6dBm 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Figure 83. LO to IF2 Isolation vs. LO Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 25 +85C +25C -40C 15 10 5 -2dBm 0dBm +2dBm +4dBm +6dBm 20 15 10 5 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 LO FREQUENCY (GHz) 0 5.0 13900-083 0 5.0 9.5 LO FREQUENCY (GHz) LO TO RF ISOLATION (dB) 25 9.0 6 0 5.0 13900-082 8.0 8.5 8 2 7.5 8.0 10 2 7.0 7.5 12 4 6.5 7.0 14 4 6.0 6.5 LO FREQUENCY (GHz) +85C +25C -40C 5.5 6.0 Figure 82. LO to IF1 Isolation vs. LO Frequency over LO Powers, TA = 25C, Voltage Control = -4 V 16 0 5.0 5.5 13900-085 5.5 LO FREQUENCY (GHz) LO TO IF2 ISOLATION (dB) 14 4 0 5.0 LO TO RF ISOLATION (dB) 16 -2dBm 0dBm +2dBm +4dBm +6dBm 13900-084 LO TO IF1 ISOLATION (dB) 16 13900-081 LO TO IF1 ISOLATION (dB) 18 20 +85C +25C -40C 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 LO FREQUENCY (GHz) Figure 81. LO to RF Isolation vs. LO Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V Figure 84. LO to RF Isolation vs. LO Frequency over LO Powers, TA = 25C, Voltage Control = -4 V Rev. 0 | Page 20 of 30 13900-086 20 Data Sheet 90 80 -40C +25C +85C -2dBm 0dBm +2dBm +4dBm +6dBm 75 IF1 TO RF ISOLATION (dB) 80 IF1 TO RF ISOLATION (dB) HMC6505A 70 60 50 70 65 60 55 50 45 40 40 6.5 7.0 7.5 8.0 8.5 9.0 RF FREQUENCY (GHz) 30 13900-287 6.0 7.5 7.0 8.0 90 8.5 9.0 -2dBm 0dBm +2dBm +4dBm +6dBm 80 IF2 TO RF ISOLATION (dB) IF2 TO RF ISOLATION (dB) 6.5 Figure 88. IF1 to RF Isolation vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V -40C +25C +85C 80 6.0 RF FREQUENCY (GHz) Figure 85. IF1 to RF Isolation vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 90 5.5 13900-290 35 30 5.5 70 60 50 40 70 60 50 40 30 20 6.0 6.5 7.0 8.0 7.5 9.0 8.5 RF FREQUENCY (GHz) 0 5.5 13900-288 8.0 8.5 9.0 -2dBm 0dBm +2dBm +4dBm +6dBm LO RETURN LOSS (dB) -5 -15 -20 -10 -15 -20 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 LO FREQUENCY (GHz) -25 5.0 13900-088 LO RETURN LOSS (dB) 7.5 0 -10 -25 5.0 7.0 Figure 89. IF2 to RF Isolation vs. RF Frequency over LO Powers, TA = 25C, Voltage Control = -4 V +85C +25C -40C -5 6.5 RF FREQUENCY (GHz) Figure 86. IF2 to RF Isolation vs. RF Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V 0 6.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 LO FREQUENCY (GHz) Figure 87. LO Return Loss vs. LO Frequency over Temperatures, LO Power = 4 dBm, Voltage Control = -4 V Figure 90. LO Return Loss vs. LO Frequency over LO Powers, TA = 25C, Voltage Control = -4 V Rev. 0 | Page 21 of 30 13900-091 30 5.5 13900-291 10 HMC6505A 0 0 +85C +25C -40C -5 +85C +25C -40C -5 -10 IF2 RETURN LOSS (dB) RF RETURN LOSS (dB) Data Sheet -10 -15 -20 -15 -20 -25 -30 -35 -40 -25 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 RF FREQUENCY (GHz) -50 13900-089 -30 5.0 0 1.5 2.0 2.5 3.0 3.5 4.0 -2dBm 0dBm +2dBm +4dBm +6dBm -5 -10 IF1 RETURN LOSS (dB) RF RETURN LOSS (dB) 1.0 Figure 94. IF2 Return Loss vs. IF Frequency over Temperatures, LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = -4 V -2dBm 0dBm +2dBm +4dBm +6dBm -5 0.5 IF FREQUENCY (GHz) Figure 91. RF Return Loss vs. RF Frequency over Temperatures, LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = -4 V 0 0 13900-094 -45 -10 -15 -20 -15 -20 -25 -30 -35 -40 -25 6.5 7.0 7.5 8.0 8.5 9.0 RF FREQUENCY (GHz) -50 0 0 +85C +25C -40C -10 IF2 RETURN LOSS (dB) -25 -30 -35 -15 2.5 3.0 3.5 4.0 IF FREQUENCY (GHz) 3.5 4.0 -35 -45 2.0 3.0 -30 -45 1.5 2.5 -25 -40 1.0 2.0 -20 -40 -50 13900-093 IF1 RETURN LOSS (dB) -20 0.5 1.5 -2dBm 0dBm +2dBm +4dBm +6dBm -5 -15 0 1.0 Figure 95. IF1 Return Loss vs. IF Frequency over LO Powers, LO Frequency = 7 GHz, TA = 25C, Voltage Control = -4 V -10 -50 0.5 IF FREQUENCY (GHz) Figure 92. RF Return Loss vs. RF Frequency over LO Powers, LO Frequency = 7 GHz, TA = 25C, Voltage Control = -4 V -5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IF FREQUENCY (GHz) Figure 93. IF1 Return Loss vs. IF Frequency over Temperatures, LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = -4 V Figure 96. IF2 Return Loss vs. IF Frequency over LO Powers, LO Frequency = 7 GHz, TA = 25C, Voltage Control = -4 V Rev. 0 | Page 22 of 30 13900-096 6.0 13900-092 5.5 13900-095 -45 -30 5.0 Data Sheet HMC6505A IF BANDWIDTH PERFORMANCE: LOWER SIDEBAND (HIGH-SIDE LO) 20 CONVERSION GAIN (dB) 16 14 12 10 8 6 10 8 6 4 2 0.8 1.3 1.8 2.3 2.8 3.3 0 0.3 35 35 SIDEBAND REJECTION (dBc) 40 30 25 20 15 10 +85C +25C -40C 0.8 1.3 1.8 2.3 2.8 3.3 IF FREQUENCY (GHz) 10 30 OUTPUT IP3 (dBm) 30 25 20 15 +85C +25C -40C IF FREQUENCY (GHz) 2.3 2.8 3.3 15 0 0.3 13900-099 3.3 1.8 20 5 2.8 1.3 25 10 10 2.3 0.8 Figure 101. Sideband Rejection vs. IF Frequency over LO Powers, LO Frequency = 7 GHz, TA = 25C, Voltage Control = -4 V 35 1.8 -2dBm 0dBm +2dBm +4dBm +6dBm IF FREQUENCY (GHz) 35 1.3 3.3 15 40 0.8 2.8 20 40 0 0.3 2.3 25 0 0.3 Figure 98. Sideband Rejection vs. IF Frequency over Temperatures, LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = -4 V 5 1.8 30 5 13900-098 0 0.3 1.3 Figure 100. Conversion Gain vs. IF Frequency over LO Powers, LO Frequency = 7 GHz, TA = 25C, Voltage Control = -4 V 40 5 0.8 IF FREQUENCY (GHz) Figure 97. Conversion Gain vs. IF Frequency over Temperatures, LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = -4 V SIDEBAND REJECTION (dBc) 12 2 IF FREQUENCY (GHz) OUTPUT IP3 (dBm) 14 4 13900-097 CONVERSION GAIN (dB) 16 0 0.3 -2dBm 0dBm +2dBm +4dBm +6dBm 18 13900-101 18 13900-100 +85C +25C -40C -2dBm 0dBm +2dBm +4dBm +6dBm 0.8 1.3 1.8 2.3 2.8 IF FREQUENCY (GHz) Figure 99. Output IP3 vs. IF Frequency over Temperatures, LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = -4 V Figure 102. Output IP3 vs. IF Frequency over LO Powers, LO Frequency = 7 GHz, TA = 25C, Voltage Control = -4 V Rev. 0 | Page 23 of 30 3.3 13900-102 20 HMC6505A Data Sheet SPURIOUS PERFORMANCE M x N Spurious Output, IF = 1000 MHz Mixer spurious products are measured in dBc from the RF output power level. Spur values are (M x IF) - (N x LO). N/A means not applicable. RF = 5500 MHz, LO frequency = 6500 MHz at LO input power = 4 dBm, IF input power = -6 dBm. M x N Spurious Outputs, IF = 350 MHz RF = 5500 MHz, LO frequency = 5850 MHz at LO input power = 4 dBm, IF input power = -6 dBm. M x IF 0 1 2 3 4 5 0 N/A 75 79 100 101 121 1 11 0 51 73 88 102 N x LO 2 3 3 18 38 36 34 61 78 60 80 94 108 98 M x IF 4 41 50 60 87 86 111 5 53 62 81 81 111 101 M x IF 0 1 2 3 4 5 1 13 0 51 72 82 91 2 8 43 34 86 96 107 N x LO 3 44 39 73 65 105 111 M x IF 4 51 73 67 98 93 108 5 57 75 94 87 103 105 M x IF 0 1 2 3 4 5 1 8 0 50 95 83 92 2 21 27 36 79 101 111 N x LO 3 53 56 61 71 105 108 M x IF 4 53 68 83 92 99 103 N x LO 2 3 8 57 37 39 33 60 69 65 100 97 109 113 4 43 66 66 84 91 108 5 59 72 90 90 104 108 0 1 2 3 4 5 0 N/A 50 66 88 80 85 1 7 0 44 85 80 88 2 11 40 35 71 81 79 N x LO 3 43 43 68 67 100 101 4 59 74 73 98 96 113 5 71 79 91 92 104 107 RF = 8500 MHz, LO frequency = 9500 MHz at LO input power = 4 dBm, IF input power = -6 dBm. N/A is not applicable. RF = 8500 MHz, LO frequency = 8850 MHz at LO input power = 4 dBm, IF input power = -6 dBm. N/A is not applicable. 0 N/A 76 81 104 114 120 1 7 0 55 82 120 121 RF = 7000 MHz, LO frequency = 8000 MHz at LO input power = 4 dBm, IF input power = -6 dBm. RF = 7000 MHz, LO frequency = 7350 MHz at LO input power = 4 dBm, IF input power = -6 dBm. 0 N/A 79 78 105 118 122 0 1 2 3 4 5 0 N/A 49 63 83 95 112 5 N/A N/A N/A N/A N/A N/A Rev. 0 | Page 24 of 30 0 1 2 3 4 5 0 N/A 50 66 101 105 120 1 8 0 44 82 105 118 N x LO 2 3 41 63 31 77 38 63 74 72 108 107 112 109 4 66 88 81 93 102 107 5 N/A N/A N/A N/A N/A N/A Data Sheet HMC6505A M x N Spurious Outputs, IF = 2500 MHz RF = 5500 MHz, LO frequency = 8000 MHz at LO input power = 4 dBm, IF input power = -6 dBm. M x IF 0 1 2 3 4 5 0 N/A 43 57 76 97 116 1 6 0 64 113 115 115 N x LO 2 3 10 41 34 42 34 64 80 65 94 96 119 112 4 57 70 78 87 94 110 5 70 79 93 92 107 113 RF = 8500 MHz, LO frequency = 11000 MHz at LO input power = 4 dBm, IF input power = -6 dBm. N/A is not applicable. M x IF RF = 7000 MHz, LO frequency = 9500 MHz at LO input power = 4 dBm, IF input power = -6 dBm. N/A is not applicable. M x IF 0 1 2 3 4 5 0 N/A 46 57 108 100 115 1 7 0 56 87 122 121 N x LO 2 3 41 62 36 73 37 63 83 69 101 112 118 112 4 67 84 103 104 101 111 5 N/A N/A N/A 101 101 106 Rev. 0 | Page 25 of 30 0 1 2 3 4 5 0 N/A 47 50 92 109 113 1 7 0 54 83 120 120 2 59 39 40 83 105 115 N x LO 3 46 80 73 77 108 109 4 N/A N/A 97 98 104 104 5 N/A N/A N/A N/A N/A N/A HMC6505A Data Sheet THEORY OF OPERATION The HMC6505A is a GaAs, pHEMT, MMIC I/Q upconverter with an integrated LO buffer that upconverts IF between dc to 3 GHz to RF between 5.5 GHz and 8.6 GHz. LO buffer amplifiers are included on chip to allow LO drive range of up to 6 dBm for full performance. The LO path feeds a quadrature splitter followed by on-chip baluns that drive the I and Q singly balanced cores of the passive mixers. The RF output of the I and Q mixers are then summed through an on-chip Wilkinson power combiner and relatively matched to provide a single-ended, 50 output signal that is amplified by the RF amplifiers to produce a dc-coupled and 50 matched RF output signal at the RFOUT port. A voltage attenuator precedes the RF amplifiers for desired gain control. Rev. 0 | Page 26 of 30 Data Sheet HMC6505A APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT Figure 103 shows the typical application circuit for the HMC6505A. To select the appropriate sideband, an external 90 hybrid is required. For applications not requiring operation to dc, use an off chip dc blocking capacitor. For applications that require the LO signal at the output to be suppressed, use a bias tee or RF feed. Ensure that the source or sink current used for LO suppression is <3 mA for each IF port to prevent damage to the device. The common-mode voltage for each IF port is 0 V. To select the upper sideband, connect the IF1 pin to the 90 port of the hybrid and the IF2 pin to the 0 port of the hybrid. To select the lower sideband, connect the IF1 pin to the 0 port of the hybrid and the IF2 pin to the 90 port of the hybrid. 13900-103 HMC6505A Figure 103. Typical Application Circuit Rev. 0 | Page 27 of 30 HMC6505A Data Sheet EVALUATION BOARD INFORMATION Layout The circuit board used in the application must use RF circuit design techniques. Signal lines must have 50 impedance and connect the package ground leads and exposed pad directly to the ground plane similarly to that shown in Figure 104. Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation board shown in Figure 106 is available from Analog Devices upon request. Solder the exposed pad on the underside of the HMC6505A to a low thermal and electrical impedance ground plane. This pad is typically soldered to an exposed opening in the solder mask on the evaluation board. Connect these ground vias to all other ground layers on the evaluation board to maximize heat dissipation from the device package. Figure 104 and Figure 105 show the printed circuit board land pattern footprint for the HMC6505A and the solder paste stencil for the HMC6505A evaluation board. EV1HMC6505ALC5 Power-On Sequence To set up the EV1HMC6505ALC5, take the following steps: 5. 6. 7. Power up VGG with a -2 V supply. Power up VDD1 with a 5 V supply. Power up VDD2 and VDD3 with another 5 V supply. Power up VCTRL with a -4 V supply (for maximum conversion gain). Adjust the VGG supply between -2 V to 0 V until the total RF supply current (IDD2 + IDD3) = 120 mA. Connect LOIN to the LO signal generator with an LO power of 4 dBm. Apply the IF1 and IF2 signals. 0.004" MASK/METAL OVERLAP 0.010" MIN MASK WIDTH GROUND PAD PAD SIZE 0.026" x 0.010" PIN 1 0.197" [0.50] 0.156" MASK OPENING o.034" TYPICAL VIA SPACING EV1HMC6505ALC5 Power Off Sequence o.010" TYPICAL VIA 1. 2. 3. 4. 5. 0.010" REF 0.030" MASK OPENING Turn off the LO and IF signals. Set VGG to -2 V. Set VCTRL to 0 V. Set the VDD1, VDD2, and VDD3 supplies to 0 V and then turn them off. Turn off the VGG supply. 0.138" SQUARE MASK OPENING 0.02 x45 CHAMFER FOR PIN1 13900-104 To turn off the EV1HMC6505ALC5, take the following steps: 0.146" SQUARE GROUND PAD Figure 104. Printed Circuit Board Land Pattern Footprint 0.017 0.0197 TYP 0.219 SQUARE 0.132 SQUARE 0.017 0.027 TYP R0.0040 TYP 132 PLCS 0.010 TYP Figure 105. Solder Paste Stencil Rev. 0 | Page 28 of 30 13900-105 1. 2. 3. 4. 0.217" SQUARE SOLDERMASK HMC6505A 13900-106 Data Sheet Figure 106. HMC6505A Evaluation Board Top Layer Table 5. Bill of Materials for the EV1HMC6505ALC5 Evaluation Board PCB Quantity 1 Reference Designator Not applicable 1 2 4 Not applicable J1, J2 J5, J6, J8, J9 2 5 J3, J4 C1, C3, C4, C13, C16 C5, C7, C8, C14, C17 C9, C11, C12, C15, C18 HMC6505A 5 5 1 Description PCB, EV1HMC6505ALC5; circuit board material: Rogers 4350 MCH, evaluation heatsink, aluminum Johnson SMA connectors 2 mm, four vertical position connector headers SRI K connectors Ceramic capacitors, 100 pF, 5%, 50 V, C0G, 0402 Ceramic capacitors, 1000 pF, 50 V, 10%, X7R, 0603 Tantalum capacitors, 2.2 F, 25 V, 10%, SMD, Case A Device under test (DUT) Manufacturer Analog Devices supplied Part Number 125487 Analog Devices supplied Johnson Components Molex 104635 142-0701-851 87832-0420 SRI Connector Gage Company Murata Manufacturing 25-146-1000-92 GRM188R71H102KA01D Keystone Electronics Corporation 5019 AVX TAJA225K025R Analog Devices HMC6505A Rev. 0 | Page 29 of 30 HMC6505A Data Sheet OUTLINE DIMENSIONS 0.36 0.30 0.24 0.08 REF 1 0.50 BSC 3.60 3.50 SQ 3.40 EXPOSED PAD 17 0.38 0.32 0.26 TOP VIEW 1.10 1.00 0.90 PIN 1 32 25 24 8 16 BOTTOM VIEW SIDE VIEW 9 0.20 MIN 3.50 REF 4.10 REF FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. PKG-004843 SEATING PLANE 04-24-2017-D PIN 1 INDICATOR 5.05 4.90 SQ 4.75 Figure 107. 32-Terminal Ceramic Leadless Chip Carrier [LCC], (E-32-1) Dimensions shown in millimeters ORDERING GUIDE Model 1 HMC6505ALC5 Temperature Range -40C to +85C Package Body Material Alumina Ceramic Lead Finish Gold over Nickel Package Description 32-Terminal LCC MSL Rating 2 MSL3 Package Option E-32-1 HMC6505ALC5TR -40C to +85C Alumina Ceramic Gold over Nickel 32-Terminal LCC MSL3 E-32-1 HMC6505ALC5TR-R5 -40C to +85C Alumina Ceramic Gold over Nickel 32-Terminal LCC MSL3 E-32-1 EV1HMC6505ALC5 Evaluation PCB Assembly The HMC6505ALC5, the HMC6505ALC5TR, and HMC6505ALC5TR-R5 are RoHS Compliant Parts. See the Absolute Maximum Ratings section. 3 The HMC6505ALC5, the HMC6505ALC5TR, and HMC6505ALC5TR-R5 have a four-digit lot number. 1 2 (c)2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D13900-0-8/17(0) Rev. 0 | Page 30 of 30 Package Marking 3 H6505A XXXX H6505A XXXX H6505A XXXX