5.5 GHz to 8.6 GHz,
GaAs, MMIC, I/Q Upconverter
Data Sheet
Rev. 0 Document Feedback
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FEATURES
Conversion gain: 15 dB typical
Sideband rejection: 22 dBc typical
Output P1dB compression at maximum gain: 22 dBm typical
Output IP3 at maximum gain: 35 dBm typical
LO to RF isolation: 4 dB typical
LO to IF isolation: 9 dB typical
RF return loss: 20 dB typical
LO return loss: 10 dB typical
IF return loss: 20 dB typical
Exposed paddle, 5 mm × 5 mm, 32-terminal, leadless chip
carrier package
APPLICATIONS
Point to point and point to multipoint radios
Military radars, electronic warfare (EW), and electronic
intelligence (ELINT)
Satellite communications
Sensors
FUNCTIONAL BLOCK DIAGRAM
EPADHMC6505A
VDD1
LOIN
GND
VCTRL
GND
IF1
GND
IF2
GND
VDD3
VDD2
VGG
GND
RFOUT
GND
13900-001
Figure 1.
GENERAL DESCRIPTION
The HMC6505A is a compact gallium arsenide (GaAs),
pseudomorphic (pHEMT), monolithic microwave integrated
circuit (MMIC) upconverter in a RoHS compliant package that
operates from 5.5 GHz to 8.6 GHz. This device provides a small
signal conversion gain of 15 dB with 22 dBc of sideband
rejection. The HMC6505A uses a variable gain amplifier (VGA)
preceded by an in-phase and quadrature (I/Q) mixer that is
driven by an active local oscillator (LO). The IF1 and IF2 mixer
inputs are provided, and an external 90° hybrid is needed to
select the required sideband. The I/Q mixer topology reduces
the need for filtering of unwanted sideband. The HMC6505A
is a smaller alternative to hybrid style single sideband (SSB)
upconverter assemblies, and it eliminates the need for wire
bonding by allowing the use of surface-mount manufacturing
techniques.
The HMC6505A is available in 5 mm × 5 mm, 32-terminal
leadless chip carrier (LCC) package and operates over a −40°C
to +85°C temperature range. An evaluation board for the
HMC6505A is also available upon request.