MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOW 23 O a2 A q st bbe iin O< Of a =~ ~~ = bbe Lin = IRF IDE 40 IRF540 | 400V Low On Resistance No Second Breakdown High Input Impedance Internal Drain-Source Diode Very Rugged: Excellent SOA Extremely Fast Switching BENEFITS Reduced Component Count Improved Performance Simpler Designs improved Reliability IRF140 = IRF144 = IRF142 IRF143 IRF540 = IRF5441 = IRF542 # IRF543 N-Channel Enhancement-Mode MOSPOWER These power FETs are designed especially for switching regulators, solenoid drivers, relay drivers and audio amplifiers. FEATURES Bs Siliconix Advance Information converters, Product Summary Part : Number BVoss "ps(on) Ip Package IRF140 100V 0.0852 | 27A IRF 141 60V TO-3 IRF142 100V 0.110 |] 244 iRF143. | . 60V IRF540 400V 0.0850 | 27A IRF541 80V TO-220AB IRF542 100V O110 | 244 IRF543 60V _ Pulsed? Drain-Gate Voltage IRF 140, 142, 540, 542 IRF 141, 143, 541, 543 Drain Current Continuous {RF140, 141, 540, 541 IRF 142, 143, 542, 543 Operating and Storage Temperature Notes: 1. Limited by package dissipation. 2. Pulse test -80us to 300us, 1% duty cycle. ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage IRF 140, 142, 540, 542 IRF 141, 143, 41, 543 Gate Current (Peak) ... 20... eee eee eee + 3A Gate-Source Voltage .........-.. 66. c cece eee dees +40V Total Power Dissipation ............. 0. cue ae 125W Linear Derating Factor ................00-. Leeae 1.0WIC 5C to + 150C PACKAGE DIMENSIONS 0.875 Ls (22.225) 2 35 max MAX 0.450 = (77.43) 9.250 (6.35) 0.1 (3.429) Ty ty 9.063 11.092) 0.312 (7.925) SEATING 0038 (0.968) tain PLANE 1.197 (30.404) [1477 (28.896) 0.675 (17,145) : 0.655 (16.637) te 0.188 i 4 (4.775) MAX / BOTH ENDS 0.go (11.176) 2 : sao Tosca OF 0420 770668) Nell te: a08s rd NOE ort (5835) 0.225 (5.715) be 0.526 , 205 5 207, > RMAX 0.205 8.207} BOTTOM VIEW (73.335) - 03 Pin 1 Gate Pin 2 Source TO-3 CASE Drain 045 (1.15) ox sy, 38 085 (7.38) [=o 280 (2.08 (5.85) V5 FR) | (6.85) | 500 (72.70) 580 (74.73) 9.181 (4.08) OA 538 (3.54) 250 16.35) 070 (1.74) 380 (9.86) q 420 (10.66) 400 2.54 _] 33 34% - 560 (14.23) [ 50 1651) "| Pin 1 Gate Pin 2 & TAB Drain Pin 3 Source 045 (1.75) TO-220AB 2-6 Siliconix ELECTRICAL CHARACTERISTICS (Ic =25C unless otherwise noted) CyGddl = CySdal = bySdal = OpGdall Cypial = zcybial = bebdal = Opal Part : Parameter Nuimber Min Typ Max | Unit Test Conditions / Static inrsa0, 542 | 1 BV Drain-Source Breakdown , _ = S$ Voltage IRF141, 143 | V._| Ves =0, In=250uA iRF541, 543 | . Vasitn Gate Threshold Voltage All 2.0 4.0 v Vos= Ves: lp=1MA Igss_ Gate-Body Leakage +100 | nA | Vgg= +20V, Vos =0 - Zero Gate Voltage Drain 0.41 | 0.25 Vos = Rated Vpg, Vas = OV : Ipss All mA Current 0.2 | 1.0 Vpg = Rated Vpg, Vag = OV, Tg = 125C _ IRF 140, 141 a7 . ee IRF540, 541 . Ipjon) + On-State Drain Current A Vos = 28V. Vas'= 10V (Note 4) IRF 142, 143 24 IRF542,.543 Static Drain-Source On-State Ines40, at 9.07 ) 0.085 'DSen) Resi 2 | Veg =10V, Ip = 15A (Note 1) esistance IRF142, 143 o9 | 0.41 IRF542, 543 9. Dynamic . - Os Forward Transconductance All 6.0 10.0 Ss Vps = 25V, Ip =15A (Note 1) Ciss Input Capacitance 1275 | 1600 : Coss Output Capacitance All 550 | 800 PF | Veg =0, Vpg= 25V, f= 1 MHz Criss Reverse Transfer Capacitance 160 | 300 , tajon) Turn-On Delay Time All 16 30 tr Rise Time All 27 80 ns | Vpp=30V, Ip = 154, RL = 2, Ros 100 tary Turn-Off Delay Time All 38 80 tt Fall Time All 14 30 Drain-Source Diode Characteristics Vso. Forward On Voltage All ~2.50 Vv lg =-27A, Vgg = 0 (Note 1) te Reverse Recovery Time . Ail 250 ns lp =27A, Veg =0, di/dt = 100A/us Note 1: Pulse test 80 us to 300 us, 1% duty cycle TEST CIRCUITS FIGURE 2 Reverse Recovery Test Circuit FIGURE 1 Switching Test Circuit Nv 502 di/dt Adjust (1+ 27 uH) _ 4* 5 TO 50uF IN4933 BFS! e)Adiust | k ~ s Vout i 2400 wwaoos 4000uF - 3 >} R$ 0.259 L $ 0.01uH | CIRCUIT iat. o ia. DAA UNDER Na723, | rr ed GENERATOR TEST 2N4204 [eenenAToR} [TT _ _ _ _ SCOPE PW. = 1 ps Cg <50 pF TYYT, , , DUTY CYCLE = 1% FROM TRIGGER CKT 7 Siliconix