DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification August 2018 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL * Dual diode * Extremely fast switching * Low reverse recovery current * Low thermal resistance * Reduces switching losses in associated MOSFET QUICK REFERENCE DATA VR = 600 V A1 VF 1.75 V A2 K IO(AV) = 10 A sym125 trr = 19 ns (typ) APPLICATIONS * Active power factor correction * Half-bridge lighting ballasts * Half-bridge/ full-bridge switched mode power supplies. The BYC10-600CT is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN SOT78 (TO220AB) mb DESCRIPTION 1 anode 1 2 cathode 3 anode 2 tab cathode 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR IO(AV) Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode IFRM IFSM Tstg Tj Storage temperature Operating junction temperature CONDITIONS Tmb 110 C = 0.5; with reapplied VRRM(max); Tmb 50 C1 = 0.5; with reapplied VRRM(max); Tmb 50 C1 t = 10 ms t = 8.3 ms sinusoidal; Tj = 150C prior to surge with reapplied VRWM(max) MIN. MAX. UNIT - 600 600 500 10 V V V A - 10 A - 40 44 A A -40 - 150 150 C C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient per diode both diodes in free air. Rth j-a MIN. TYP. MAX. UNIT - 60 2.5 2.2 - K/W K/W K/W 1 Tmb(max) limited by thermal runaway August 2018 1 Rev 1.300 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10-600CT ELECTRICAL CHARACTERISTICS Tj = 25 C, per diode unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage IF = 5 A; Tj = 150C IF = 10 A; Tj = 150C IF = 5 A; VR = 600 V VR = 500 V; Tj = 100 C - 1.4 1.75 2.0 9 0.9 1.75 2.2 2.9 100 3.0 V V V A mA IR Reverse current trr trr Reverse recovery time Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/s IF = 5 A; VR = 400 V; dIF/dt = 500 A/s IF = 5 A; VR = 400 V; dIF/dt = 500 A/s; Tj = 100C - 30 19 50 - ns ns trr Reverse recovery time - 25 30 ns Irrm Peak reverse recovery current - 0.7 3 A Peak reverse recovery current IF = 5 A; VR = 400 V; dIF/dt = 50 A/s; Tj = 125C IF = 5 A; VR = 400 V; dIF/dt = 500 A/s; Tj = 125C Irrm - 8 11 A Vfr Forward recovery voltage IF = 10 A; dIF/dt = 100 A/s - 9 11 V ID IL Vin Vin Vin = 400 V d.c. Vo = 400 V d.c. IR IF 150 uH typ OUTPUT DIODE inductive load IL 500 V MOSFET Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction mode, where the transistor turns on whilst forward current is still flowing in the diode. August 2018 2 Rev 1.300 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss 15 Forward dissipation, PF (W) BYC5-600 BYC10-600CT Tmb(max) C 112.5 Vo = 1.3 V Rs = 0.09 Ohms Irrm ID D = 1.0 dIF/dt ID = IL 0.5 losses due to diode reverse recovery 125 10 0.2 0.1 time 5 I tp D= T tp 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) VD t T 0 137.5 7 150 8 Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.3. Maximum forward dissipation per diode as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x D. 0.2 0.15 Diode reverse recovery switching losses, Pdsw (W) 100 f = 20 kHz Tj = 125 C VR = 400 V BYC5-600 Reverse recovery time, trr (ns) 10 A 7.5 A 7.5 A 0.1 10 A IF = 5 A IF = 5 A 0.05 Tj = 125 C VR = 400 V BYC5-600 0 100 Rate of change of current, dIF/dt (A/us) 10 100 1000 1000 Fig.7. Typical reverse recovery time trr, per diode as a function of rate of change of current dIF/dt. Fig.4. Typical reverse recovery switching losses per diode, as a function of rate of change of current dIF/dt. Transistor losses due to diode reverse recovery, Ptsw (W) f = 20 kHz Tj = 125 C 4 VR = 400 V 10 A 100 5 3 Rate of change of current, dIF/dt (A/us) Peak reverse recovery current, Irrm (A) BYC5-600 7.5 A 10 2 10 A IF = 5 A IF = 5 A 1 Tj = 125 C VR = 400 V 1 100 Rate of change of current, dIF/dt (A/us) BYC5-600 0 100 Rate of change of current, dIF/dt (A/us) 1000 Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. August 2018 1000 Fig.8. Typical peak reverse recovery current per diode, Irrm as a function of rate of change of current dIF/dt. 3 Rev 1.300 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss I dI F BYC10-600CT 10 F dt Forward current, IF (A) BYC5-600 Tj = 25 C Tj = 150 C 8 t rr 6 typ time max 4 Q I I R 100% 10% s 2 rrm 0 Fig.9. Definition of reverse recovery parameters trr, Irrm 20 Peak forward recovery voltage, Vfr (V) 0 1 2 Forward voltage, VF (V) 3 4 Fig.12. Typical and maximum forward characteristic per diode, IF = f(VF); Tj = 25C and 150C. BYC5-600 100mA BYC5-600 Reverse leakage current (A) Tj = 25 C IF = 10 A 10mA 15 Tj = 125 C typ 1mA 100 C 10 75 C 100uA 50 C 5 10uA 0 0 50 100 150 Rate of change of current, dIF/dt (A/ s) 1uA 200 Fig.10. Typical forward recovery voltage per diode, Vfr as a function of rate of change of current dIF/dt. I 25 C 0 100 200 300 400 Reverse voltage (V) 500 600 Fig.13. Typical reverse leakage current per diode as a function of reverse voltage. IR = f(VR); parameter Tj 10 F Transient thermal impedance, Zth j-mb (K/W) 1 time 0.1 VF PD 0.01 V D= tp T fr VF 0.001 1us time T 10us t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29 10s Fig.14. Maximum thermal impedance per diode, Zth j-mb as a function of pulse width. Fig.11. Definition of forward recovery voltage Vfr August 2018 tp 4 Rev 1.300 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10-600CT MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3x) b2(2) (2x) 1 2 3 c b(3x) e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 August 2018 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 5 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Rev 1.300 WeEn Semiconductors Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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