4-237
TELCOM SEMICONDUCTOR, INC.
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ORDERING INFORMATION
Temperature
Part No. Package Range
TC4423COE 16-Pin SOIC (Wide) 0°C to +70°C
TC4423CPA 8-Pin Plastic DIP 0°C to +70°C
TC4423EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4423EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4423MJA 8-Pin CerDIP – 55°C to +125°C
TC4424COE 16-Pin SOIC (Wide) 0°C to +70°C
TC4424CPA 8-Pin Plastic DIP 0°C to +70°C
TC4424EOE 16-Pin SO Wide – 40°C to +85°C
FEATURES
High Peak Output Current .................................. 3A
Wide Operating Range ..........................4.5V to 18V
High Capacitive Load
Drive Capability ......................... 1800 pF in 25nsec
Short Delay Times ............................. < 40nsec Typ
Matched Rise/Fall Times
Low Supply Current
— With Logic "1" Input ................................ 3.5 mA
— With Logic "0" Input ................................ 350 µA
Low Output Impedance .............................3.5 Typ
Latch-Up Protected . Will Withstand 1.5A Reverse
Current
Logic Input Will Withstand Negative Swing Up
to 5V
ESD Protected....................................................4 kV
Pinouts Same as TC1426/27/28; TC4426/27/28
GENERAL DESCRIPTION
The TC4423/4424/4425 are higher output current ver-
sions of the new TC4426/4427/4428 buffer/drivers, which,
in turn, are improved versions of the earlier TC426/427/428
series. All three families are pin-compatible. The TC4423/
4424/4425 drivers are capable of giving reliable service in
far more demanding electrical environments than their ante-
cedents.
Although primarily intended for driving power MOSFETs,
the TC4423/4424/4425 drivers are equally well-suited to
driving any other load (capacitive, resistive, or inductive)
which requires a low impedance driver capable of high peak
currents and fast switching times. For example, heavily
loaded clock lines, coaxial cables, or piezoelectric transduc-
ers can all be driven from the TC4423/4424/4425. The only
known limitation on loading is the total power dissipated in
the driver must be kept within the maximum power dissipa-
tion limits of the package.
Temperature
Part No Package Range
TC4424EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4424MJA 8-Pin CerDIP – 55°C to +125°C
TC4425COE 16-Pin SO Wide 0°C to +70°C
TC4425CPA 8-Pin Plastic DIP 0°C to +70°C
TC4425EOE 16-Pin SO Wide – 40°C to +85°C
TC4425EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4425MJA 8-Pin CerDIP – 55°C to +125°C
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
FUNCTIONAL BLOCK DIAGRAM
EFFECTIVE
INPUT C = 20 pF
(EACH INPUT)
TC4423
TC4424
TC4425
DUAL INVERTING
DUAL NONINVERTING
ONE INV., ONE NONINV.
OUTPUT
INPUT
GND
VDD
300 mV
4.7V
NOTES:
1. TC4425 has one inverting and one noninverting driver.
2. Ground any unused driver input.
INVERTING
NONINVERTING
TC4423/4/5-6 10/21/96
4-238 TELCOM SEMICONDUCTOR, INC.
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
PDIP RθJ-C ..................................................... 45°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C..................................................... 75°C/W
Operating Temperature Range
C Version...............................................0°C to +70°C
I Version ............................................- 25°C to +85°C
E Version ...........................................- 40°C to +85°C
M Version ........................................- 55°C to +125°C
Package Power Dissipation (TA 70°C)
Plastic DIP ......................................................730mW
CerDIP............................................................800mW
SOIC...............................................................470mW
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V VDD 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VOH Logic 1 High Input Voltage 2.4 V
VIL Logic 0 Low Input Voltage 0.8 V
IIN Input Current 0V VIN VDD – 1 1 µA
Output
VOH High Output Voltage VDD – 0.025 V
VOL Low Output Voltage 0.025 V
ROOutput Resistance, High IOUT = 10 mA, VDD = 18V 2.8 5
ROOutput Resistance, Low IOUT = 10 mA, VDD = 18V 3.5 5
IPK Peak Output Current 3 A
IREV Latch-Up Protection Duty Cycle 2% 1.5 A
Withstand Reverse Current t 300 µsec
Switching Time (Note 1)
tRRise Time Figure 1, CL = 1800 pF 23 35 nsec
tFFall Time Figure 1, CL = 1800 pF 25 35 nsec
tD1 Delay Time Figure 1, CL = 1800 pF 33 75 nsec
tD2 Delay Time Figure 1, CL = 1800 pF 38 75 nsec
Power Supply
ISPower Supply Current VIN = 3V (Both Inputs) 1.5 2.5 mA
VIN = 0V (Both Inputs) 0.15 0.25 mA
PIN CONFIGURATIONS
8-Pin DIP
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
VDD
NC
OUT A
NC
IN A
IN B
VDD
NC
GND
GND
NC
OUT A
VDD
OUT B
OUT B
NC
NC
OUT A
DD
OUT A
DD
OUT B
OUT B
NC
NC
OUT A
VDD
OUT A
VDD
OUT B
OUT B
NC
4423 4424 4425
NC
OUT A
OUT B
VDD
NC
OUT A
OUT B
VDD
4423 4424 4425
V
V
16-Pin SO Wide
1
2
3
4
5
6
7
8
16
13
12
11
10
9
15
14
NC
NC = NO CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
TC4423
TC4424
TC4425
TC4423
TC4424
TC4425
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B......VDD + 0.3V to GND – 5.0V
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C.................................................. 55°C/W
PDIP RθJ-A ................................................... 125°C/W
4-239
TELCOM SEMICONDUCTOR, INC.
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3A DUAL HIGH-SPEED
POWER --MOSFET DRIVERS TC4423
TC4424
TC4425
Figure 1. Inverting Driver Switching Time Figure 2. Noninverting Driver Switching Time
OUTPUT
INPUT
0.1 µF CERAMIC
+5V
INPUT
10%
90%
10%
90%
10%
90%
16V
OUTPUT
tD1 tF
C = 1800pF
L
1 µF
WIMA
MKS-2
VDD = 16V
0V
0V
TC4423
(1/2 TC4425)
Test Circuit
1
2
tD2 tR
INPUT: 100 kHz,
square wave,
tRISE = tFALL
10 nsec
90%
10%
10% 10%
tD1
+5V
INPUT
16V
OUTPUT
0V
0V
90%
90%
OUTPUT
INPUT
0.1 µF CERAMIC
C = 1800pF
L
1 µF
WIMA
MKS-2
VDD = 16V
TC4424
(1/2 TC4425)
Test Circuit
1
2
tD2
tRtF
INPUT: 100 kHz,
square wave,
tRISE = tFALL
10 nsec
ELECTRICAL CHARACTERISTICS (Cont.):
Over operating temperature range with 4.5V VDD 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1 High Input Voltage 2.4 V
VIL Logic 0 Low Input Voltage 0.8 V
IIN Input Current 0V VIN VDD – 10 10 µA
Output
VOH High Output Voltage VDD – 0.025 V
VOL Low Output Voltage 0.025 V
ROOutput Resistance, High IOUT = 10 mA, VDD = 18V 3.7 8
ROOutput Resistance, Low IOUT = 10 mA, VDD = 18V 4.3 8
IPK Peak Output Current 3 A
IREV Latch-Up Protection Duty Cycle 2% 1.5 A
Withstand Reverse Current t 300 µsec
Switching Time (Note 1)
tRRise Time Figure 1, CL = 1800 pF 28 60 nsec
tFFall Time Figure 1, CL = 1800 pF 32 60 nsec
tD1 Delay Time Figure 1, CL = 1800 pF 32 100 nsec
tD2 Delay Time Figure 1, CL = 1800 pF 38 100 nsec
Power Supply
ISPower Supply Current VIN = 3V (Both Inputs) 2 3.5 mA
VIN = 0V (Both Inputs) 0.2 0.3
NOTE: 1. Switching times guaranteed by design.
4-240 TELCOM SEMICONDUCTOR, INC.
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
TYPICAL CHARACTERISTICS
4681012
14 16 18
VDD
2200 pF
100 1000 10,000
C (pF)
LOAD
5V
10V
15V
tRISE (nsec)
100
80
60
40
20
0
100
80
60
40
20
0100 1000 10,000
5V
10V
15V
100
80
60
40
20
0
CLOAD (pF)
1000 pF
3300 pF
1500 pF
Rise TIme vs. Capacitive Load
Rise Time vs. Supply Voltage
Fall TIme vs. Capacitive Load
TIME (nsec)
Rise and Fall Times vs. Temperature
TA (°C)
Propagation Delay vs. Input Amplitude
32
30
28
26
24
22
20
18
–55 –35 5 25 45 65 85 105 125–15
100
80
60
40
20
DELAY TIME (nsec)
INPUT (V)
V = 10V
DD
C = 2200 pF
LOAD
tRISE
tFALL
tRISE
C = 2200 pF
LOAD
0123456789101112
t
D2
tD1
tFALL
tFALL (nsec)
4681012
14 16 18
Fall Time vs. Supply Voltage
100
80
60
40
20
0
VDD
1000 pF
1500 pF
4700 pF
470 pF
4700 pF
3300 pF
2200 pF
470 pF
tFALL (nsec)
tRISE (nsec)
4-241
TELCOM SEMICONDUCTOR, INC.
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3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS TC4423
TC4424
TC4425
TYPICAL CHARACTERISTICS (Cont.)
–55 –35 –15 5 25 45 65 85 105 125
Propagation Delay Time vs. Supply Voltage
50
45
40
35
30
25
20
Quiescent Current vs. Temperature
1
0.1
0.01
4 6 8 1012141618
DELAY TIME (nsec)
Delay Time vs. Temperature
50
45
40
35
30
25
20
TA (°C)
DELAY TIME (nsec)
DD
V –55 –35 –15 5 25 45 65 85 105 125
4 6 8 10 12 14 16 18 TA (°C)
IQUIESCENT (mA)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Quiescent Current vs. Supply Voltage
DD
V
Output Resistance (Output High)
vs. Supply Voltage
14
12
10
8
6
4
24 6 8 10 12 14 16 18
DD
V
RDS(ON) ()
Output Resistance (Output Low)
vs. Supply Voltage
14
12
10
8
6
4
24 6 8 10 12 14 16 18
DD
V
C = 2200 pF
LOAD C = 2200 pF
LOAD
tD2
tD2 tD2
tD2
BOTH INPUTS = 1
INPUTS = 1
INPUTS = 0
WORST CASE @ TJ = +150°C
TYP @ TA = +25°CTYP @ TA = +25°C
WORST CASE @ TJ = +150°C
TA = +25°C
BOTH INPUTS = 0
IQUIESCENT (mA)
RDS(ON) ()
4-242 TELCOM SEMICONDUCTOR, INC.
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
10,000 pF
10,000 pF
Supply Current vs. Capacitive Load
100 1000 10,000
ISUPPLY (mA)
60
50
40
30
20
10
0
Supply Current vs. Capacitive Load
100 1000 10,000
Supply Current vs. Capacitive Load
100 1000 10,000
Supply Current vs. Frequency
FREQUENCY (kHz)
Supply Current vs. Frequency
10 100 1000
FREQUENCY (kHz)
90
80
70
60
50
40
30
20
10
0
Supply Current vs. Frequency
10 100 1000
FREQUENCY (kHz)
355 kHz
200 kHz
35.5 kHz
634 kHz
2 MHz
100 pF
1000 pF
4700 pF
100 pF
V = 12V
DD V = 12V
DD
V = 6V
DD
CLOAD (pF)
V = 18V
DD
60
50
40
30
20
10
010 100 1000
112.5 kHz
20 kHz
3300 pF
100 pF
1000 pF
63.4 kHz
DD
V = 18V
3300 pF
1000 pF
1.125 MHz
634 kHz
355 kHz
200 kHz
112.5 kHz
63.4 kHz
20 kHz
90
80
70
60
50
40
30
20
10
0
634 kHz
355 kHz
112.5 kHz
20 kHz
2 MHz
1.125 MHz
3.55 MHz
120
100
80
60
40
20
0
10,000 pF
DD
V = 6V
2200 pF
ISUPPLY (mA)
ISUPPLY (mA)
ISUPPLY (mA)ISUPPLY (mA)
ISUPPLY (mA)
120
100
80
60
40
20
0
CLOAD (pF)
CLOAD (pF)
3A DUAL HIGH-SPEED
MOSFET DRIVERS
TC4423
TC4424
TC4425
4-243
TELCOM SEMICONDUCTOR, INC.
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200
0
400
600
800
1000
1200
1400
020406080
100 120 140
AMBIENT TEMPERATURE (°C)
MAX. POWER (mW)
8 Pin DIP
16 Pin SOIC
8 Pin CerDIP
Thermal Derating Curves
TC4423 Crossover Energy
10–9
8
10–8
A • sec
024681012141618
6
4
2
8
6
4
2
10–10
VIN
NOTE: The values on this graph
represent the loss seen by both drivers in
a package during one complete cycle. For
a single driver, divide the stated values by
2. For a single transition of a single driver,
divide the stated value by 4.
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings (See page 2) may
cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to Absolute Maximum Rating Conditions for extended
periods may affect device reliability.
3A DUAL HIGH-SPEED
MOSFET DRIVERS TC4423
TC4424
TC4425