PMLL4153T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of April 1996

1996 Sep 18

DISCRETE SEMICONDUCTORS

PMLL4150; PMLL4151;

PMLL4153

High-speed diodes

1/3 page (Datasheet)

M3D054

1996 Sep 18 2

NXP Semiconductors Product data sheet

High-speed diodes PMLL4150; PMLL4151;

PMLL4153

FEATURES

•Small hermetically sealed glass

SMD package

•High switching speed: max. 4 ns

•General application

•Continuous reverse voltage:

max. 50 V

•Repetitive peak reverse voltage:

max. 75 V

•Repetitive peak fo rward current:

max. 600 mA and 450 mA

respectively.

APPLICATIONS

•High-speed s witching

•The PMLL4150 is primarily

intended for general purpose use in

computer and industrial

applications.

•The PMLL4151 and PMLL4153 are

intended for military and industrial

applications.

DESCRIPTION

The PMLL4150, PMLL415 1, PMLL4153 are high-speed switching diodes

fabricated in pl anar technology, and en capsulated in small herme tically sealed

glass SOD80C SMD packages.

Fig.1 Simplified outline (SO D8 0C ) and symbol.

Cathode indicated by black band.

handbook, 4 columns

MAM061

1996 Sep 18 3

NXP Semiconductors Pr oduct data sheet

High-speed diodes PMLL4150; PMLL4151;

PMLL4153

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board .

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRRM repetitive peak reverse voltage

PMLL4151 −75 V

PMLL4153 −75 V

VRcontinuous revers e voltage −50 V

IFcontinuous forward current see Fig.2; note 1

PMLL4150 −300 mA

PMLL4151 −200 mA

PMLL4153 −200 mA

IFRM repetitive peak forward current

PMLL4150 −600 mA

PMLL4151 −450 mA

PMLL4153 −450 mA

IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 μs−4 A

t = 1 ms −1 A

t = 1 s −0.5 A

Ptot total power dissipation Tamb = 25 °C; note 1 −500 mW

Tstg storage temperature −65 +200 °C

Tjjunction temperature −200 °C

1996 Sep 18 4

NXP Semiconductors Pr oduct data sheet

High-speed diodes PMLL4150; PMLL4151;

PMLL4153

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VFforward voltage see Fig.3

PMLL4150 IF = 1 mA 540 620 mV

IF = 10 mA 660 740 mV

IF = 50 mA 760 860 mV

IF = 100 mA 820 920 mV

IF = 200 mA 870 1 000 mV

PMLL4151 IF = 50 mA −1 000 mV

PMLL4153 IF = 0.1 mA 490 550 mV

IF = 0.25 mA 530 590 mV

IF = 1 mA 590 670 mV

IF = 2 mA 620 700 mV

IF = 10 mA 700 810 mV

IF = 50 mA 740 880 mV

IRreverse current VR = 50 V; see Fig.5

PMLL4150 −0.1 μA

PMLL4151 −0.05 μA

PMLL4153 −0.05 μA

IRreverse current VR = 50 V; Tj = 150 °C; see Fig.5

PMLL4150 −100 μA

PMLL4151 −50 μA

PMLL4153 −50 μA

Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6

PMLL4150 −2.5 pF

PMLL4151 −2pF

PMLL4153 2pF

1996 Sep 18 5

NXP Semiconductors Pr oduct data sheet

High-speed diodes PMLL4150; PMLL4151;

PMLL4153

THERMAL CHARACTE RISTICS

Note

1. Device mounted on an FR4 printed-circuit board .

trr reverse recove ry time when switched from IF = 10 mA to

IR = 1 mA; RL = 100 Ω; measured at

IR = 0.1 mA; see Fig.7

PMLL4150 −6ns

when switched from IF = 10 mA to

200 mA to IR = 10 mA to 200 mA;

RL = 100 Ω; measured at IR = 0.1 × IF;

see Fig.7

−4ns

when switched from IF = 200 mA to

400 mA to IR = 200 mA to 400 mA;

RL = 100 Ω; measured at IR = 0.1 × IF;

see Fig.7

−6ns

trr reverse recove ry time when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

PMLL4151 −4ns

when switched from IF = 10 mA to

IR = 60 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

−2ns

trr reverse recove ry time when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

PMLL4153 −4ns

when switched from IF = 10 mA to

IR = 60 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

−2ns

tfr forward recove ry time when switched to IF = 200 mA; tr = 0.4 ns;

measured at VF = 1 V; see Fig.8 −10 ns

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 300 K/W

Rth j-a thermal resistance from junction to ambient note 1 350 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1996 Sep 18 6

NXP Semiconductors Pr oduct data sheet

High-speed diodes PMLL4150; PMLL4151;

PMLL4153

GRAPHICAL DATA

Device mounted on an FR4 printed-circuit board.

(1) PMLL4150.

(2) PMLL4151; PMLL4153.

Fig.2 M ax imum permissible continuous forwa rd

current as a func tion of ambient

temperature.

handbook, halfpage

0 100 200

400

300

200

100

MBG456

Tamb (oC)

(mA)

(1)

(2)

Fig.3 Forward current as a function of forward

voltage.

handbook, halfpage

012

600

200

400

MBG464

VF (V)

(mA)

(1) (2) (3)

(1) Tj = 175 °C; typical values.

(2) Tj = 25 °C; typical values.

(3) Tj = 25 °C; maximum values.

Fig.4 Maximum permissible non-r ep etitive peak forwar d cu rrent as a function of puls e du ra tion.

Based on square wave currents.

Tj = 25 °C prior to surge.

handbook, full pagewidth

MBG704

10 tp (μs)

IFSM

(A)

−1

1996 Sep 18 7

NXP Semiconductors Pr oduct data sheet

High-speed diodes PMLL4150; PMLL4151;

PMLL4153

Fig.5 Re verse current as a function of junction

temperature.

handbook, halfpage

0 100 Tj (

C) 200

−1

−2

(1) (2)

(μA)

MGD006

(3)

(1) VR = 75 V; maximum values.

(2) VR = 75 V; typical values.

(3) VR = 20 V; typical values.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj = 25 °C.

handbook, halfpage

01020

1.2

1.0

0.6

0.4

0.8

MGD004

VR (V)

(pF)

1996 Sep 18 8

NXP Semiconductors Pr oduct data sheet

High-speed diodes PMLL4150; PMLL4151;

PMLL4153

Fig.7 Reverse reco very voltage test circuit and waveforms.

handbook, full pagewidth

trr

(1)

IFt

output signal

trt

10%

90%

input signal

V = V I x R

RF S

R = 50

SΩIF

D.U.T.

R = 50

iΩ

SAMPLING

OSCILLOSCOPE

MGA881

(1) The value of IR is dependent on product type.

Fig.8 Forward recove ry time test circuit and waveforms.

Input signal: forward pulse rise time tr = 0.4 ns; forward pulse duration tp = 100 ns; duty factor δ = 0.01.

trt

10%

90%

input

signal

R = 50

SΩ

R = 50

iΩ

OSCILLOSCOPE

Ω1 k Ω450

D.U.T.

MBH181

Vfr

tfr t

output

signal

(V)

1.0

1996 Sep 18 9

NXP Semiconductors Pr oduct data sheet

High-speed diodes PMLL4150; PMLL4151;

PMLL4153

PACKAGE OUTLINE

Fig.9 SOD80C.

Dimensions in mm.

mba39

1.6

1.4

3.7

3.3

0.3 0.3

∅

1996 Sep 18 10

NXP Semiconductors Product data sheet

High-speed diodes PMLL4150; PMLL4151;

PMLL4153

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective spe cification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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does not give any representations or warranties,

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specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

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not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

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property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificati on .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Printed in The Netherlands 1996 Sep 18