DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 PMLL4150; PMLL4151; PMLL4153 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 18 NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes FEATURES DESCRIPTION * Small hermetically sealed glass SMD package The PMLL4150, PMLL4151, PMLL4153 are high-speed switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. * High switching speed: max. 4 ns * General application * Continuous reverse voltage: max. 50 V * Repetitive peak reverse voltage: max. 75 V k handbook, 4 columns * Repetitive peak forward current: max. 600 mA and 450 mA respectively. a MAM061 APPLICATIONS * High-speed switching * The PMLL4150 is primarily intended for general purpose use in computer and industrial applications. Cathode indicated by black band. Fig.1 Simplified outline (SOD80C) and symbol. * The PMLL4151 and PMLL4153 are intended for military and industrial applications. 1996 Sep 18 2 NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER MIN. MAX. PMLL4151 - 75 V PMLL4153 - 75 V - 50 V PMLL4150 - 300 mA PMLL4151 - 200 mA PMLL4153 - 200 mA PMLL4150 - 600 mA PMLL4151 - 450 mA PMLL4153 - 450 mA t = 1 s - 4 A t = 1 ms - 1 A t=1s - 0.5 A continuous reverse voltage IF continuous forward current IFSM UNIT repetitive peak reverse voltage VR IFRM CONDITIONS see Fig.2; note 1 repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 - 500 storage temperature -65 +200 C junction temperature - 200 C Ptot total power dissipation Tstg Tj Tamb = 25 C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 3 mW NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage PMLL4150 IR CONDITIONS MIN. MAX. IF = 1 mA 540 620 mV IF = 10 mA 660 740 mV IF = 50 mA 760 860 mV IF = 100 mA 820 920 mV IF = 200 mA 870 1 000 mV see Fig.3 PMLL4151 IF = 50 mA - 1 000 mV PMLL4153 IF = 0.1 mA 490 550 mV IF = 0.25 mA 530 590 mV IF = 1 mA 590 670 mV IF = 2 mA 620 700 mV IF = 10 mA 700 810 mV IF = 50 mA 740 880 mV reverse current VR = 50 V; see Fig.5 PMLL4150 - 0.1 PMLL4151 - 0.05 A - 0.05 A PMLL4153 IR Cd reverse current A VR = 50 V; Tj = 150 C; see Fig.5 PMLL4150 - 100 A PMLL4151 - 50 A PMLL4153 - 50 A diode capacitance f = 1 MHz; VR = 0; see Fig.6 PMLL4150 - 2.5 pF PMLL4151 - 2 pF 2 pF PMLL4153 1996 Sep 18 UNIT 4 NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes SYMBOL trr PARAMETER reverse recovery time PMLL4150 trr reverse recovery time PMLL4151 CONDITIONS MIN. MAX. - 6 ns when switched from IF = 10 mA to 200 mA to IR = 10 mA to 200 mA; RL = 100 ; measured at IR = 0.1 x IF; see Fig.7 - 4 ns when switched from IF = 200 mA to 400 mA to IR = 200 mA to 400 mA; RL = 100 ; measured at IR = 0.1 x IF; see Fig.7 - 6 ns - 4 ns - 2 ns - 4 ns when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 - 2 ns when switched to IF = 200 mA; tr = 0.4 ns; measured at VF = 1 V; see Fig.8 - 10 ns when switched from IF = 10 mA to IR = 1 mA; RL = 100 ; measured at IR = 0.1 mA; see Fig.7 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 trr reverse recovery time PMLL4153 tfr forward recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 UNIT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 5 VALUE UNIT 300 K/W 350 K/W NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes GRAPHICAL DATA MBG456 400 handbook, halfpage MBG464 600 IF (mA) handbook, halfpage IF (mA) 300 (1) 400 200 (1) (2) (3) (2) 200 100 0 0 Tamb (oC) 100 200 0 0 Device mounted on an FR4 printed-circuit board. (1) PMLL4150. (2) PMLL4151; PMLL4153. Fig.2 1 2 VF (V) (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 10 102 103 tp (s) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 18 6 104 NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes MGD004 MGD006 103 handbook, halfpage 1.2 handbook, halfpage IR (A) Cd (pF) 102 1.0 (1) (2) (3) 10 0.8 1 0.6 10-1 10-2 0 100 Tj (oC) 0.4 200 0 (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1996 Sep 18 7 10 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 IF SAMPLING OSCILLOSCOPE t rr t R = 50 i V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) The value of IR is dependent on product type. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 1.0 90% R S = 50 D.U.T. VF (V) OSCILLOSCOPE Vfr R i = 50 10% MBH181 t tr tp input signal Input signal: forward pulse rise time tr = 0.4 ns; forward pulse duration tp = 100 ns; duty factor = 0.01. Fig.8 Forward recovery time test circuit and waveforms. 1996 Sep 18 8 tfr output signal t NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes PACKAGE OUTLINE 0.3 0.3 3.7 3.3 Dimensions in mm. Fig.9 SOD80C. 1996 Sep 18 1.60 1.45 9 mba390 NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1996 Sep 18 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 1996 Sep 18