A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 65 V
BVCES IC = 100 mA 65 V
BVEBO IE = 10 mA 3.5 V
ICES VCE = 32 V 20 mA
hFE VCE = 5.0 V IC = 5.0 A 15 --- ---
PG
ηC VCC = 28 V POUT = 100 W f = 1.2 to 1.4 GHz 6.0
50
dB
%
NPN SILICON RF POWER TRANSISTOR
ALR100
DESCRIPTION:
The ASI ALR100 is Designed for
1200 – 1400 MHz, L-Band Applications.
FEATURES:
• Internal Input/Output Matching Network
• PG = 6.0 dB at 100 W/1400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 13.5 A
VCC 32 V
PDISS 270 W @ TC = 25 °C
TJ -65 °C to +250 °C
TSTG -65 °C to +200 °C
θJC 0.55 °OC/W
PACKAGE STYLE .400 2L FLG
1 = COLLECTOR 2&3 = BASE 4 = EMITTER
ORDER CODE: ASI10514
MINIMUM
inches / mm
.395 / 10.03
.140 / 3.56
B
C
D
E
F
G
A
MAXIMUM
.230 / 5.84
.407 / 10.34
inches / mm
H.118 / 3.00 .131 / 3.33
DIM
K
L
I
J.386 / 9.80
O
P
Q
R
N
M.450 / 11.43
.050 / 1.27
.11 0 / 2 .8 0
.19 3 / 4 .9 0
.003 / 0.08 .006 / 0.15
.900 / 22.86
.65 0 / 1 6 .5 1
.063 / 1.60
.125 / 3.18
.170 / 4.32
.062 / 1.58
.405 / 10.29
.11 0 / 2 .8 0
J
P
GM
C
B
D
H
F
N
Q
I
O
K
E
Ø.120
A
.062 x 45°
R
L
1
2 3
4
