1N4933-1N4937
1N4933-1N4937, Rev. C2001 Fairchild Semiconductor Corporation
1N4933 - 1N4937
Fast Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
•Low forward voltage drop.
•High surge current capability.
• High reliability.
• High current capability.
Symbol
Parameter
Device
Units
4933 4934 4935 4936 4937
VF Forward Voltage @ 1.0 A 1.2 V
trr Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, Irr = 0.25 A 150 ns
IR Reverse Current @ rated VR TA = 25°C
TA = 125°C 5.0
100 µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 12 pF
DO-41
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
4933 4934 4935 4936 4937
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 V
IF(AV) Average Rectified Forward Current,
.375 " lead length @ TA = 50°C 1.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 30 A
Tstg Storage Temperature Range -50 to +150 °C
TJ Operating Junction Temperature -50 to +150 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 2.5 W
RθJA Thermal Resistance, Junction to Ambient 50 °C/W
Thermal Characteristics
1N4933-1N4937
1N4933-1N4937, Rev. C2001 Fairchild Semiconductor Corporation
Typical Characteristics
0 25 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHA SE
HALF WAVE
60 HZ
RESISTIV E OR
INDU CTIVE LOAD
.375 " 9.0 mm L EAD
LENGTHS
12 51020 50100
0
10
20
30
40
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
1 2 5 10 20 50 100
1
2
5
10
20
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
0.6 0.8 1 1.2 1.4 1.6 1.8 2
0.01
0.03
0.1
0.3
1
3
10
20
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Width = 20 0 µ
µµ
µS
2% Duty Cycle
T = 25 C
º
J
Pulse Width = 30 0 µ
µµ
µS
2% Duty Cycle
T = 25 C
º
A
Pulse
Generator
(Note 2)
50Ω
NONINDUCTIVE 50Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
0 20406080100120140
0.1
1
10
100
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
J
T = 25 C
º
A
T = 10 0 C
A º
1.0cm SET TIME BASE FOR
trr
+ 0 .5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current
Figure 5. Total Capacitance
Figure 4. Reverse Current vs Reverse Voltage
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
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