A
P1250GM / AP1250GH
1.5A / 3A Bus Termination Regulator
General Description
Features
Ideal for DDR-I and DDR-II applications
Capable of sourcing and sinking current 1.5A/3A
Current limiting protection
Thermal protection
Current-shoot-through protection
High accuracy output voltage at full load
Minimum external components
Adjustable VOUT by external resistors
Shutdown for standby or suspend mode operation with high-impedance output
Block Diagram
Data and specifications subject to change without notice
Pb Free Plating Product
200903267
1
A
P1250GM/H is a linear regulator designed as a cost-effective solution for active
termination of DDR SDRAM. The converting voltage range is from 1.6V to 6V into a
desired output voltage, which is adjusted by two external resistors. The current
sourcing and sinking capability of the regulator is up to 1.5A/3A while the output
voltage within 2%/3%.
This device provides on-chip thermal shutdown and current limit functions for circuit
tolerance of the output fault conditions. SO-8 and TO-252-5L packages are available
for all commercial and industrial surface mount applications.
VCNTL VIN
Current limiting
sensor
Thermal
CNTL VOUT
GND
VREFEN
Advanced Power
Electronics Corp,
Applications
Mother Board DDR-SDRAM Termination
Mother Board DDR-II Termination
Game / Play Station
Set Top Box
PCI / AGP Graphics
IPC
SCSI-III Bus Termination
Pin Configuration
Part No. AP1250GM (SO-8 package) Part No. AP1250GH (TO-252-5L package)
Pin Description
Pin Name Function
VIN Power Input
GND Ground
VCNTL Gate Drive Voltage
VREFEN Reference Voltage Input and Chip Enable
VOUT Output Voltage
Ordering Information
Data and specifications subject to change without notice
AP1250GM / AP1250GH
2
VIN
GND
VREFEN
VOUT
VCNTL
VCNTL
VCNTL
VCNTL 1 2 3 4 5
1. VIN
2. GND
3. VCNTL(TAB)
4. VREFEN
5. VOUT
AP1250GX
M : SO-8
H : TO-252-5L
Package
A
P1250GM / AP1250G
H
Absolute Maximum Ratings
Power Input Voltage 6V
Power Dissipation internal limited
HBM ESD Rating 3KV
Storage Temperature Range -55 to 150
Lead Temperature(Soldering 5 sec) 260
SO-8 Thermal Resistance3(Rthjc)20/W
SO-8 Thermal Resistance(Rthja)80/W
TO-252-5L Thermal Resistance(Rthjc)6/W
TO-252-5L Thermal Resistance(Rthja)40/W
Electrical Characteristics @ TA = 25 ( unless otherwise specified )
VIN = +2.5V, VCNTL = +3.3V, VREFEN = +1.25V, COUT = 10uF(Ceramic)
Symbol Parameter Test Conditions Min. Typ. Max. Units
VOS Output Offset Voltage1IOUT = 0A -20 -5 20 mV
| VLOAD | Load Regulation IL : 0 --> 1.5A -- 0.5 2 %
IL : 1.5 --> 3A -- 2 3
%
VIN Input Voltage Range(DDR I/II)2VCNTL >= VIN 1.6 2.5/1.8 -- V
VCNTL Gate Drive Voltage Range2VCNTL >= VIN -- 3.3 6 V
ISHDN Current in Shutdown VREFEN < 0.2V,RL=180Ω-- 10 90 uA
Short Circuit Protection
ILIMIT Current Limit AP1250M -- 2 -- A
AP1250H -- 3 -- A
Iq Quiescent Current IOUT = 0A -- 1 3 mA
Over Temperature Protection
TOS Thermal Shutdown Temperature 3.3VVCNTL 5V -- 140 --
Shutdown Function
Shutdown Threshold Trigger Output = High 0.8 -- -- V
Shutdown Threshold Trigger Output = Low -- -- 0.2 V
Notes:
1.VOS is the voltage measurement VOUT subtracted from VREFEN.
2.Keep VCNTL >= VIN at power on/off sequences.
3.Surface mounted on 1 in2 copper pad of FR4 board
Data and specifications subject to change without notice 3
A
P1250GM / AP1250G
H
Application Circuit
Data and specifications subject to change without notice 4
R1=R2=100K, RTT=50/33/25
COUT, min=10uF(Ceramic) +1000uF Under the worst case test condition
CSS=1uF, CIN=470uF(Low ESR), CCNTL=47uF
VIN VCNTL
REFEN VOUT
GND
RTT
EN
VIN=2.5V/1.8V/1.5V
VCNTL=3.3V
R1
R2
CSS
CIN
COUT
CCNTL
2N7002
AP1250GM/H
AP1250GM / AP1250G
H
Typical Performance Characteristics
Fig 1. Line Regulation( VIN vs. VOUT ) Fig 2. Line Regulation( VCNTL vs. VOUT )
Fig 3. Output Short-Circuit Protection Fig 4. Output Short-Circuit Protection
Data and specifications subject to change without notice 5
1.2
1.225
1.25
1.275
1.5 1.7 1.9 2.1 2.3 2.5
VIN(V)
VOUT (V)
VCNTL = 3.3V
TA = 251.2
1.225
1.25
1.275
2.5 3 3.5 4 4.5 5 5.5 6
VCNTL (V)
VOUT (V)
VIN = 1.25V
TA = 25
VIN = 2.5V
VCNTL = 3.3V
VREFEN = 1.25V
Time(200us/DIV)
IL(2.0A/DIV)
Source VIN = 2.5V
VCNTL = 3.3V
VREFEN = 1.25V
Time(200us/DIV)
IL(2.0A/DIV)
Sink
AP1250GM / AP1250GH
Typical Performance Characteristics
Fig 5. Transient Response Fig 6. Transient Response
Fig 7. Safe Operating Area
Data and specifications subject to change without notice 6
Time(200us/DIV)
IL(0.5A/DIV)
VIN = 2.5V
VCNTL = 3.3V
IL=1.5A
f=1KHz
VOUT(100mV/DIV)
Source
VIN = 2.5V
VCNTL = 3.3V
IL=-1.5A
f=1KHz
IL(0.5A/DIV) VOUT(100mV/DIV)
Sink
10
20
30
40
50
60
70
80
90
100
0246810
IL (A)
Duty (%)
VIN = 2.5V
VCNTL = 3.3V
f=1KHz
Tc = 80
100
120
Time(200us/DIV)