Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low on-resistance BVDSS 20V
▼ Capable of 2.5V gate drive RDS(ON) 18.5mΩ
▼ Surface mount package ID8.3A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient3Max. 62.5 ℃/W
Data and specifications subject to change without notice
AP4434GM
RoHS-compliant Product
Parameter Rating
Drain-Source Voltage 20
Gate-Source Voltage ±12
Continuous Drain Current3,VGS @ 4.5V 8.3
Continuous Drain Current3,VGS @ 4.5V 6.7
Pulsed Drain Current130
Total Power Dissipation 2
Linear Derating Factor 0.02
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
Thermal Data Parameter
200607072-1/4
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
SSSG
DDDD
SO-8
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.01 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=8A - - 18.5 mΩ
VGS=2.5V, ID=4A - - 25 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.3 - 1 V
gfs Forward Transconductance VDS=5V, ID=4A - 9 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±12V - - ±100 nA
QgTotal Gate Charge2ID=8A - 17 27 nC
Qgs Gate-Source Charge VDS=16V - 1.7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 5.8 - nC
td(on) Turn-on Delay Time2VDS=10V - 9 - ns
trRise Time ID=1A - 10 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 26 - ns
tfFall Time RD=10Ω- 7.5 - ns
Ciss Input Capacitance VGS=0V - 940 1500 pF
Coss Output Capacitance VDS=20V - 175 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 140 - pF
RgGate Resistance f=1.0MHz - 1.2 1.8 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2.1A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=8A, VGS=0V, - 23 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
AP4434GM
2/4
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
AP4434GM
0
5
10
15
20
25
30
0123
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC 5.0V
4.5V
3.5V
2.5V
VG=2.0V
0
5
10
15
20
25
30
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC
VG=2.0V
5.0V
4.5V
3.5V
2.5V
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=8A
VG=4.5V
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.4
0.6
0.8
1.0
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
10
14
18
22
26
0246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=4A
TA=25oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4/4
AP4434GM
Q
VG
5.0V
QGS QGD
QG
Charge
0
4
8
12
16
0 10203040
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =10V
VDS =12V
VDS =16V
ID=8A
100
1000
10000
1 5 9 13172125
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
10
20
30
0123
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Package Outline : SO-8
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
C 0.19 0.22 0.25
D 4.80 4.90 5.00
E1 3.80 3.90 4.00
E 5.80 6.15 6.50
L 0.38 0.71 1.27
θ0 4.00 8.00
e
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
1.27 TYP
ADVANCED POWER ELECTRONICS CORP.
c
DETAIL A
A1
A
XXXX
G
M
YWWSSS
Package Code
Part Numbe
r
DETAIL A Lθ
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
e
B
134
5678
2
D
E1 E
meet Rohs requirement
