© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 9 1Publication Order Number:
NTMFS4C10N/D
NTMFS4C10N
Power MOSFET
30 V, 46 A, Single N−Channel, SO−8 FL
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•CPU Power Delivery
•DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°CID15.0 A
TA = 80°C 11.2
Power Dissipation
RqJA (Note 1) TA = 25°C PD2.49 W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°CID22.5 A
TA = 80°C 16.8
Power Dissipation
RqJA ≤ 10 s (Note 1) TA = 25°C PD5.6 W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°CID8.2 A
TA = 80°C 6.2
Power Dissipation
RqJA (Note 2) TA = 25°C PD0.75 W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°CID46 A
TC =80°C 34
Power Dissipation
RqJC (Note 1) TC = 25°C PD23.6 W
Pulsed Drain
Current TA = 25°C, tp = 10 msIDM 132 A
Current Limited by Package TA = 25°C IDmax 80 A
Operating Junction and Storage
Temperature TJ,
TSTG −55 to
+150 °C
Source Current (Body Diode) IS21 A
Drain to Source dV/dt dV/dt7.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 25 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS 31 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 Apk, EAS = 14 mJ.
MARKING
DIAGRAMS
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V(BR)DSS RDS(ON) MAX ID MAX
30 V 6.95 mW @ 10 V 46 A
10.8 mW @ 4.5 V
N−CHANNEL MOSFET
G (4)
S (1,2,3)
D (5−8)
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
4C10N
AYWZZ
1
Device Package Shipping†
ORDERING INFORMATION
NTMFS4C10NT1G SO−8 FL
(Pb−Free) 1500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4C10N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 5.3
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 50.3
Junction−to−Ambient – Steady State (Note 5) RqJA 165.9
Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 22.2
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
(transient) V(BR)DSSt VGS = 0 V, ID(aval) = 7.1 A,
Tcase = 25°C, ttransient = 100 ns 34 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ14.5 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V TJ = 25°C 1.0 mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ4.7 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 5.8 6.95 mW
VGS = 4.5 V ID = 15 A 8.9 10.8
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 43 S
Gate Resistance RGTA = 25°C 0.3 1.0 2.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
987
pF
Output Capacitance COSS 574
Reverse Transfer Capacitance CRSS 162
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.165
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
9.7
nC
Threshold Gate Charge QG(TH) 1.5
Gate−to−Source Charge QGS 2.8
Gate−to−Drain Charge QGD 4.8
Gate Plateau Voltage VGP 3.2 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 18.6 nC
SWITCHING CHARACTERISTICS (Note 7)
T urn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
9.0
ns
Rise Time tr34
T urn−Off Delay Time td(OFF) 14
Fall Time tf7.0
NTMFS4C10N
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 7)
T urn−On Delay Time td(ON)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.0
ns
Rise Time tr26
T urn−Off Delay Time td(OFF) 18
Fall Time tf4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A TJ = 25°C 0.80 1.1 V
TJ = 125°C 0.67
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
26.7
ns
Charge Time ta14.1
Discharge Time tb12.6
Reverse Recovery Charge QRR 13.7 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
NTMFS4C10N
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4
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
53210
0
10
20
50
15
55
4.03.53.02.01.51.0
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
9.08.07.0 106.05.04.03.0
0.002
0.006
0.010
705030 604020
0.006
0.010
0.016
0.020
0.002
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
0.8
1.0
1.1
1.3
30252015105
10
100
1000
10000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
65
5
4.2 V to 10 V 3.6 V
3.2 V
3.0 V
2.8 V
2.6 V
3.8 V
TJ = 25°CVDS = 5 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
0.008
0.014
ID = 30 A
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
50
ID = 30 A
VGS = 10 V VGS = 0 V
TJ = 85°C
TJ = 150°C
TJ = 125°C
2.5
0.004
0.014
0.012
1.2
1.4
0.7
1.5
45
0.016
60
10
3.4 V
40
20
40
60
30
70
10
50
80
5.00.50
0.020
0.018
0.004
1.6
1.7
0.9
4.5
25
30
35
40
4.0 V
0.008
0.012
0.018
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TYPICAL CHARACTERISTICS
Qgs
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
25201510 3050
0
400
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−T O−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
4
6
8
10
12
Figure 11. Maximum Rated Forward Biased
Safe Operating Area Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
1001010.1
0.01
0.1
1
10
100
150125100755025
0
2
6
10
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
QT
Qgd
VDD = 15 V
ID = 15 A
VGS = 10 V
td(off)
td(on)
tr
tf
TJ = 25°C
TJ = 125°C
VGS = 0 V
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
ID = 17 A
1000
4
8
200
600
800
12
14
1200
1.0
0
2
4
6
8
10
0 4 6 8 12 14 16 18 20
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
14
16
18
20
10 ms
0.01
102
1
3
5
7
9
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TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001
0.01
0.1
1
10
100
R(t) (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 14. GFS vs. ID
ID (A)
4030100
0
10
50
GFS (S)
20 50
20
60 80
30
40
60
70
Figure 15. Avalanche Characteristics
PULSE WIDTH (SECONDS)
1.E−031.E−041.E−061.E−08
1
10
100
ID, DRAIN CURRENT (A)
1.E−05
TA = 25°C
TA = 85°C
1.E−07
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7
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
M3.00 3.40
q0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 c L
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
M
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
e
P
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Phone: 81−3−5817−1050
NTMFS4C10N/D
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al
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