AFT09S282NR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 80 watt RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 720 to 960 MHz.
•Typical Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz 20.0 35.9 6.3 --38.0 -- 1 4
940 MHz 20.1 36.2 6.2 --37.6 -- 1 8
960 MHz 20.0 36.1 6.1 --37.5 -- 1 7
Features
•Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•Designed for Digital Predistortion Error Correction Systems
•Optimized for Doherty Applications
•In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Document Number: AFT09S282N
Rev. 0, 10/2012
Freescale Semiconductor
Technical Data
720--960 MHz, 80 W AVG., 28 V
AFT09S282NR3
Figure 1. Pin Connections
(Top View)
RFout/VDS
21
RFin/VGS
O M -- 7 8 0 -- 2
PLASTIC
©Freescale Semiconductor, Inc., 2012.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT09S282NR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +70 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 °C
Case Operating Temperature Range TC--40 to +150 °C
Operating Junction Temperature Range (1,2) TJ--40 to +225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 80 W CW, 28 Vdc, IDQ = 1500 mA, 960 MHz
Case Temperature 91°C, 282 W CW, 28 Vdc, IDQ = 1500 mA, 960 MHz
RθJC
0.31
0.27
°C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 °C
Table 5. Electrical Characteristics (TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70Vdc,V
GS =0Vdc)
IDSS — — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 μAdc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 370 μAdc)
VGS(th) 1.0 1.5 2.0 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 1400 mA, Measured in Functional Test)
VGS(Q) 1.7 2.2 2.7 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=3.6Adc)
VDS(on) 0.1 0.14 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
AFT09S282NR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, Pout = 80 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHzOffset.
Power Gain Gps 19.0 20.0 22.0 dB
Drain Efficiency ηD33.5 36.1 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.6 6.1 —dB
Adjacent Channel Power Ratio ACPR —--37.5 --36.0 dBc
Input Return Loss IRL — -- 1 7 -- 1 0 dB
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 940 MHz
VSWR 10:1 at 32 Vdc, 416 W CW Output Power
(3 dB Input Overdrive from 280 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —280 — W
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —60 —MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =80WAvg. GF—0.1 —dB
Gain Variation over Temperature
(--30°Cto+85°C)
∆G — 0.0156 —dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
∆P1dB —0.006 —dB/°C
1. Part internally matched both on input and output.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT09S282NR3
Figure 2. AFT09S282NR3 Test Circuit Component Layout
AFT09S282N
Rev. 0
CUT OUT AREA
C3
C4
C8C8 R1
C2
C5
C1 C6
C7
R2
C18 C19 C23
C22
C13
C12
C11
C10 C20
C21
C24 C26*
C16 C17
C15
C14
C25
*C26 is mounted vertically.
C9
Table 6. AFT09S282NR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 62 pF Chip Capacitor ATC100B620JT500XT ATC
C2, C5, C10, C13 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC
C3, C7, C14, C15, C22, C23 10 μF Chip Capacitors GRM32ER71H106KA12L Murata
C4, C6, C16, C17, C18, C19 47 pF Chip Capacitors ATC600F470JT250XT ATC
C8, C9, C11, C24 3.9 pF Chip Capacitors ATC600F3R9BT250XT ATC
C12, C20, C21 2.4 pF Chip Capacitors ATC600F2R4BT250XT ATC
C25 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp
C26 36 pF Chip Capacitor ATC100B360JT500XT ATC
R1, R2 6.04 Ω, 1/4 W Chip Resistor CRCW12066R04FKEA Vishay
PCB 0.020″,εr=3.5 RO4350 Rogers
AFT09S282NR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
820
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 80 Watts Avg.
-- 2 0
-- 0
-- 5
-- 1 0
-- 1 5
13
23
22
21
-- 4 2
38
34
30
26
-- 3 7
-- 3 8
-- 3 9
-- 4 0
ηD, DRAIN
EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
20
19
18
17
16
15
14
840 860 880 900 920 940 960 980
22
-- 4 1
-- 2 5
ACPR (dBc)
PARC
VDD =28Vdc,P
out =80W(Avg.)
IDQ = 1400 mA, Single--Carrier W--CDMA
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 320 W (PEP), IDQ = 1400 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 940 MHz
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
70
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
50 90 110 150
20
50
45
40
35
30
25
ηD,DRAIN EFFICIENCY (%)
--3 dB = 132 W
130
ηD
ACPR
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 2 5
-- 3 0
-- 4 0
-- 3 5
-- 4 5
22
Gps, POWER GAIN (dB)
21
20
19
18
17
16
Gps
-- 1 d B = 6 7 W
-- 2 d B = 9 5 W
IRL
PARC (dB)
-- 1 . 8
-- 1
-- 1 . 2
-- 1 . 4
-- 1 . 6
-- 2
-- 5
Gps 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
IM3--L
1VDD =28Vdc,I
DQ = 1400 mA, f = 940 MHz
Single--Carrier W--CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
6
RF Device Data
Freescale Semiconductor, Inc.
AFT09S282NR3
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
16
22
0
60
50
40
30
20
ηD, DRAIN EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
21
20
10 100 300
10
-- 6 0
ACPR (dBc)
19
18
17
0
-- 3 0
-- 4 0
-- 5 0
Figure 7. Broadband Frequency Response
11
23
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 1400 mA
19
17
15
GAIN (dB)
21
13
700 800 900 1000 1100 1200 1300 1400 1500
-- 4 0
20
10
0
-- 1 0
-- 2 0
IRL (dB)
-- 3 0
Gain
960 MHz
VDD =28Vdc,I
DQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
940 MHz
920 MHz
960 MHz
940 MHz
920 MHz
960 MHz 940 MHz 920 MHz
IRL
AFT09S282NR3
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQ = 1400 mA,Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
(Ω)
Zin
(Ω)
Zload (1)
(Ω)
Max
Linear
Gain (dB)
Max Output Power
P1dB P3dB
(dBm) (W)
ηD
(%)
AM/PM
(°)(dBm) (W)
ηD
(%)
AM/PM
(°)
920 1.83 - j3.18 1.66 + j3.17 4.55 - j3.27 18.7 56.0 396 53.5 -8.0 56.9 494 58.2 -12
940 2.01 - j3.27 2.03 + j3.31 4.97 - j2.86 18.7 55.9 391 54.4 -7.7 56.9 490 57.6 -11
960 2.64 - j3.34 2.55 + j3.45 5.77 - j1.78 18.4 55.9 391 53.9 -7.9 56.9 488 57.8 -12
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
Figure 8. Load Pull Performance — Maximum P1dB Tuning
VDD =28Vdc,I
DQ = 1400 mA,Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
(Ω)
Zin
(Ω)
Zload (1)
(Ω)
Max
Linear
Gain (dB)
Max Drain Efficiency
P1dB P3dB
(dBm) (W)
ηD
(%)
AM/PM
(°)(dBm) (W)
ηD
(%)
AM/PM
(°)
920 1.83 - j3.18 1.70 + j3.02 1.49 - j1.61 22.0 53.5 225 66.2 -15 54.3 267 69.6 -22
940 2.01 - j3.27 2.12 + j3.16 1.48 - j1.80 22.0 53.3 215 66.6 -16 54.0 248 70.1 -24
960 2.64 - j3.34 2.66 + j3.26 1.76 - j1.79 21.7 53.6 230 67.4 -15 54.3 269 70.6 -22
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
8
RF Device Data
Freescale Semiconductor, Inc.
AFT09S282NR3
P1dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz
34506721
34506721
-- 4 . 5
0
-- 0 . 5
-- 1 . 5
-- 1
-- 2
-- 2 . 5
-- 3 . 5
-- 4
-- 3
-- 4 . 5
0
-- 0 . 5
-- 1 . 5
-- 1
-- 2
-- 2 . 5
-- 3 . 5
-- 4
-- 3
-- 4 . 5
0
-- 0 . 5
-- 1 . 5
-- 1
-- 2
-- 2 . 5
-- 3 . 5
-- 4
-- 3
IMAGINARY (Ω)
IMAGINARY (Ω)
18
18.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Figure 10. P1dB Load Pull Output Power Contours (dBm)
-- 4 . 5
REAL (Ω)
0
-- 0 . 5
-- 1 . 5
IMAGINARY (Ω)
3450
Figure 11. P1dB Load Pull Efficiency Contours (%)
REAL (Ω)
IMAGINARY (Ω)
Figure 12. P1dB Load Pull Gain Contours (dB)
REAL (Ω)
Figure 13. P1dB Load Pull AM/PM Contours (°)
REAL (Ω)
-- 1
P
E
55
-- 2
-- 2 . 5
-- 3 . 5
-- 4
67
-- 3
21
51.5
53
53.5
5052
54
56
58
60
62
64
66
52.5 52
18.5
1919.52020.521
21.5
22
34506721
-- 8
-- 1 0
-- 1 6
-- 1 8
-- 2 0
Power Gain
Drain Efficiency
Linearity
Output Power
P
E
P
E
P
E
54.5
54
-- 2 2
-- 2 4
55.5
-- 1 2
-- 1 4
AFT09S282NR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Figure 14. P3dB Load Pull Output Power Contours (dBm)
-- 4
1
REAL (Ω)
-- 1
-- 2
IMAGINARY (Ω)
0
145607
Figure 15. P3dB Load Pull Efficiency Contours (%)
REAL (Ω)
Figure 16. P3dB Load Pull Gain Contours (dB)
REAL (Ω)
Figure 17. P3dB Load Pull AM/PM Contours (°)
REAL (Ω)
Power Gain
Drain Efficiency
Linearity
Output Power
-- 3
P
E
52
16
32
-- 4
1
-- 1
-- 2
0
145607
-- 3
P
E
32
-- 4
1
-- 1
-- 2
IMAGINARY (Ω)
0
145607
-- 3
P
56 56.5
E
32
-- 4
1
-- 1
-- 2
IMAGINARY (Ω)
0
145607
-- 3
P
E
32
-- 4
1
-- 1
-- 2
IMAGINARY (Ω)
0
145607
-- 3
P
-- 1 0
E
32
52.5
53
53.5
54
54.5
54
56
58
60
62
64
66
68
16.5
17
18
18.5
19
20
-- 1 4
-- 8
-- 6
IMAGINARY (Ω)
55.5
55
17.5
19.5 -- 1 2
-- 1 6
-- 1 8
-- 2 0
-- 2 2
10
RF Device Data
Freescale Semiconductor, Inc.
AFT09S282NR3
PACKAGE DIMENSIONS
AFT09S282NR3
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
AFT09S282NR3
AFT09S282NR3
13
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
•RF High Power Model
•.s2p File
Development Tools
•Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Oct. 2012 •Initial Release of Data Sheet
14
RF Device Data
Freescale Semiconductor, Inc.
AFT09S282NR3
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
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disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
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Document Number: AFT09S282N
Rev. 0, 10/2012
