Discrete POWER & Signal
Technologies
High Conductance Low Leakage Diode
Sourced from Process 1T.
MMBD1701/A / 1703/A / 1704/A / 1705/A
N
MARKING
MMBD1701 11 MMBD1701A A11
MMBD1703 13 MMBD1703A A13
MMBD1704 14 MMBD1704A A14
MMBD1705 15 MMBD1705A A15
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
CONNECTI ON DIAGRAMS
3
21
3
21
3
21
3
12 NC
1703
1704
1701
1705
85
3
12
Symbol Parameter Value Units
WIV Wor king Inverse Voltage 20 V
IOAverage Rectified Current 50 mA
IFDC Forward Curre nt 150 mA
ifRecurrent Peak Forward Current 150 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second 250 mA
Tstg Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Symbol Characteristic Max Units
MMBD1701/A /170 3/A-1 705/A*
PDTo ta l De vice Dissip at i on
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
SOT-23
3
1
2
MMBD1701/A / 1703/A / 1704/A / 1705/A
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Un its
BVBr eakdow n Volt ag e IR = 5.0 µA30 V
IRReverse Current VR = 20 V 50 nA
VFForward Voltage IF = 1 0 µA
IF = 100 µA
IF = 1.0 mA
IF = 10 mA
IF = 20 mA
IF = 50 mA
420
520
640
760
810
0.89
500
610
740
880
950
1.1
mV
mV
mV
mV
mV
V
CODiode Capacitance VR = 0 , f = 1. 0 M Hz 1. 0 pF
TRR Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
IF = IR = 10 mA IRR = 1.0 mA,
RL = 1 00Ω
IF = IR = 10 mA IRR = 1.0 mA,
RL = 1 00Ω
700
1.0
pS
nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
1 2 3 5 10 20 30 50 100
40
50
60
I - REVERSE CURRENT (u A)
V - REVERSE VOLTAGE (V)
R
R
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 1 to 22 V
GENE RAL RULE: The Reverse Current o f a dio de will appro x imately
double for every ten ( 10) Degree C increas e in Temperature
1 2 3 5 10 20
0
5
10
V - RE VE RSE V OLTAGE (V)
I - RE VE RSE CURREN T (nA)
R
R
T a= 25°C
FORWARD VOLTAGE vs F O RWARD CURRENT
VF - 1. 0 to 100 uA
1 2 3 5 10 20 30 50 100
300
350
400
450
500
550
600
I - F O RWARD CURRENT (uA)
V - F ORWARD VOLTAGE (mV)
F
F
Ta= 25°C
FORW A RD VOLT AGE vs FORW ARD CURRENT
VF - 0.1 to 10 mA
0.1 0.2 0.3 0.5 1 2 3 5 10
550
600
650
700
750
800
850
I - FORWARD CURRENT (mA)
V - FORWARD VOL T AGE (mV )
F
F
T a= 25°C
IR
High Conductance Low Leakage Diode
(continued)
MMBD1701/A / 1703/A / 1704/A / 1705/A
Typical Characteristics (continued)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 200 m A
10 20 30 50 100 200
0.8
1
1.2
1.4
1.6
I - F O RWARD CURRENT (m A)
V - FORW ARD VOL TAGE (V)
F
F
T a= 25°C
CAPACITANCE vs REVERSE CURRENT
VR - 0 to 15 V
0 2 4 6 8 10 12 14
0.5
0.6
0.7
0.8
0.9
1
R EVER SE VO LTA GE ( V)
CAPAC ITAN CE (pF)
Ta= 25°C
Po wer Dissi pat io n,
Avera ge R ec t i fi ed Curr ent (Io),
Fo rwar d Cu rren t ( I ) & A mbien t Tem perat ur e ( T )
0 25 50 75 100 125 150 175
0
50
100
150
200
250
T - AM BIENT TE MPERAT URE ( C)
P - P O W ER DI SS IPAT I O N ( mW )
P - PO WER DISSIPATION - mW
I - CONTINOUS FORWARD CURR ENT - mA
o
D
R
A
F
Io - AVERAG E RECTIFIED CURRENT - mA
A
D
P ower D e rating C u rve
0 25 50 75 100 125 150 175 200
0
50
100
150
200
250
300
350
Io - AVERA GE TEMPERATUR E
P - POW ER D ISSIPATI ON ( mW)
D
SOT-23
DO-7
MMBD1701/A / 1703/A / 1704/A / 1705/A
High Conductance Low Leakage Diode
(continued)
