MMBD1701/A / 1703/A / 1704/A / 1705/A Discrete POWER & Signal Technologies N MMBD1701/A / 1703/A / 1704/A / 1705/A 3 CONNECTION DIAGRAMS 85 3 1 1701 3 2 2 NC 1 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 MARKING 11 MMBD1701A 13 MMBD1703A 14 MMBD1704A 15 MMBD1705A A11 A13 A14 A15 1 1703 1 2 3 3 1704 2 3 2 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units 20 V W IV Working Inverse Voltage IO Average Rectified Current 50 mA IF DC Forward Current 150 mA if Recurrent Peak Forward Current 150 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Storage Temperature Range 250 -55 to +150 mA C TJ Operating Junction Temperature 150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max Units MMBD1701/A /1703/A-1705/A* 350 2.8 357 mW mW/C C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions I R = 5.0 A VR = 20 V BV Breakdown Voltage IR Reverse Current VF Forward Voltage CO Diode Capacitance TRR Reverse Recovery Time MMBD1701-1705 Max Units 50 nA 500 610 740 880 950 1.1 1.0 mV mV mV mV mV V pF 700 pS 1.0 nS 30 I F = 10 A I F = 100 A I F = 1.0 mA I F = 10 mA I F = 20 mA I F = 50 mA VR = 0, f = 1.0 MHz MMBD1701A-1705A Min 420 520 640 760 810 0.89 I F = IR = 10 mA I RR = 1.0 mA, RL = 100 I F = IR = 10 mA I RR = 1.0 mA, RL = 100 V Typical Characteristics 60 10 Ta= 25C 50 40 1 2 3 5 10 20 30 IR - REVERSE CURRENT (uA) 50 100 600 Ta= 25C 550 500 450 400 350 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Ta= 25C 5 0 1 2 3 5 10 VR - REVERSE VOLTAGE (V) 20 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA V F - FORWARD VOLTAGE (mV) VF - FORWARD VOLTAGE (mV) FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA 300 REVERSE CURRENT vs REVERSE VOLTAGE IR - 1 to 22 V IIRR - REVERSE CURRENT (nA) VR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 850 Ta= 25C 800 750 700 650 600 550 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 MMBD1701/A / 1703/A / 1704/A / 1705/A High Conductance Low Leakage Diode (continued) Typical Characteristics (continued) CAPACITANCE vs REVERSE CURRENT VR - 0 to 15 V 1.6 Ta= 25C CAPACITANCE (pF) 1 Ta= 25C 1.4 1.2 1 0.8 10 20 30 50 100 I F - FORWARD CURRENT (mA) Power Dissipation, Average Rectified Current (Io), Forward Current (I F) & Ambient Temperature (TA ) 250 P D 200 I 150 100 -C ON TIN OU SF DI SS IPA TIO N OR WA RD Io - AVER AGE RE CTIFIED 50 0 R -P OW ER 0 -m W CU RR EN T -m A CURRE NT - mA 25 50 75 100 125 150 o T A- AMBIENT TEMPERATURE ( C) 175 0.9 0.8 0.7 0.6 0.5 200 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 Power Derating Curve PD - POWER DISSIPATION (mW) V F - FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 200 mA PD - POWER DISSIPATION (mW) MMBD1701/A / 1703/A / 1704/A / 1705/A High Conductance Low Leakage Diode 350 300 250 SOT-23 200 DO-7 150 100 50 0 0 25 50 75 100 125 150 Io - AVERAGE TEMPERATURE 175 200