DSP8-12A Standard Rectifier VRRM = 2x 1200 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-12A Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-220 Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b DSP8-12A Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 1200 V TVJ = 25C 10 A TVJ = 150C 0.2 mA TVJ = 25C 1.16 V 1.35 V 1.08 V 8A IF = 16 A IF = 8A IF = 16 A TVJ = 150 C TC = 160C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.34 V T VJ = 175 C 8 A TVJ = 175 C 0.79 V d = 0.5 for power loss calculation only Ptot typ. VR = 1200 V IF = forward voltage drop min. 33 m 1.5 K/W K/W 0.50 TC = 25C 100 W t = 10 ms; (50 Hz), sine TVJ = 45C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45C 72 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 70 As TVJ = 150 C 50 As 50 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20130107b DSP8-12A Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 25 Unit A -55 150 C -55 175 C Weight 2 MD mounting torque FC mounting force with clip g 0.4 0.6 Nm 20 60 N Product Marking abcdef Part Number Logo Date Code Lot # YYWW Z XXXXXX Assembly Line Ordering Standard Part Number DSP8-12A Similar Part DSP8-12AC DSP8-12S DSP8-12AS DSP8-08A DSP8-08S DSP8-08AS Equivalent Circuits for Simulation I V0 R0 Package ISOPLUS220AB (3) TO-263AB (D2Pak) (2) TO-263AA (D2Pak) (3) TO-220AB (3) TO-263AB (D2Pak) (2) TO-263AA (D2Pak) (3) * on die level Delivery Mode Tube Quantity 50 Code No. 465062 Voltage class 1200 1200 1200 800 800 800 T VJ = 175C Rectifier V 0 max threshold voltage 0.79 R 0 max slope resistance * 30 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Marking on Product DSP8-12A V m Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b DSP8-12A Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 OP H1 Q E D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2/4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b DSP8-12A Rectifier 100 20 102 50 Hz, 80% VRRM VR = 0 V 16 80 12 IF TVJ = 150C 125C 8 25C [A] TVJ = 45C IFSM TVJ = 45C 2 It [A] 2 TVJ = 150C [A s] 60 TVJ = 150C 4 0 0.6 0.8 1.0 1.2 1.4 40 0.001 1.6 101 0.01 0.1 1 VF [V] t [s] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current 1 2 3 4 5 6 7 8 10 t [ms] 2 Fig. 3 I t versus time per diode 28 RthJA: 4 K/W 8 K/W 10 K/W 12 K/W 16 K/W 20 K/W 16 DC = 1 0.5 0.4 0.33 0.17 0.08 12 Ptot 8 DC = 1 0.5 0.4 0.33 0.17 0.08 24 20 IF(AV)M 16 [A] 12 [W] 8 4 4 0 0 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 200 0 50 Tamb [C] IF(AV)M [A] 100 150 200 TC [C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation vs. direct output current and ambient temperature 1.6 1.2 Constants for ZthJC calculation: ZthJC i 0.8 [K/W] 0.4 Rthi (K/W) ti (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 5 0.00001 0.8 0.00001 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b