SEMITRANS® M
IGBT Modules
SKM 22 GD 123 D
SKM 22 GD 123 D L*)
GD
Features
•MOS input (voltage controlled)
•N channel, homogeneous Si
•Low inductance case
•Very low tail current with low
temperature dependence
•High short circui t capability,
self li miting to 6 * Icnom
•Latch-up free
•Fast & soft in verse CAL
diodes8)
•Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
•Large clearance (9 mm) and
creepage distances (13 mm).
Typical Applications
•Switched mode power supplies
•Three phase inverters for
AC motor speed control
•General power switchi ng
applications
•Pulse frequencies also above
15 kHz
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
– diF/dt = 400 A/µs, VGE = 0 V
3) Use: VGEoff = -5 ... -15 V
5) See fig. 2 + 3; RGoff = 52 Ω
8) CAL = Controlled Axial Lifetime
Technology.
*) Main terminals = 2 mm dia.
Cases and mech. data → B6 - 68
Sixpack
Abso lu te Ma xi mu m Ratings Values
Symbol Conditions 1) Units
VCES 1200 V
VCGR RGE = 20 kΩ1200 V
ICTcase = 25/80 °C 25 / 15 A
ICM Tcase = 25/80 °C; tp = 1 ms 50 / 30 A
VGES ± 20 V
Ptot per IGBT, Tcase = 25 °C 145 W
Tj, (Tstg) – 40 . . .+150 (125) °C
Visol AC, 1 min. 2 500 V
humidity DIN 40 040 Class F
climate DIN IEC 68 T.1 40/125/56
Inverse Diode
IF= – ICTcase = 25/80 °C 25 / 15 A
IFM= – ICM Tcase = 25/80 °C; tp = 1 ms 50 / 30 A
IFSM tp = 10 ms; sin.; Tj = 150 °C 200 A
I2tt
p = 10 ms; Tj = 150 °C 200 A2s
Characteristics
Symbol Conditions 1) min. typ. max. Units
V(BR)GES VGE = 0, IC = 0,5 mA > VCES ––V
VGE(th) VGE = VCE, IC = 1 mA 4,5 5,5 6,5 V
ICES VGE = 0 Tj = 25 °C–0,30,5mA
VCE = VCES T
j = 125 °C–1,8–mA
IGES VGE = 20 V, VCE = 0 – – 150 nA
VCEsat IC = 15 A VGE = 15 V; – 2,5(3,1) 3(3,7) V
VCEsat IC = 22 A Tj = 25 (125) °C – 3(3,7) – V
gfs VCE = 20 V, I C = 15 A – 12 – S
CCHC per IGBT – – 300 pF
Cies VGE = 0 – 1000 – pF
Coes VCE = 25 V – 150 – pF
Cres f = 1 MHz – 70 – pF
LCE – – 60 nH
td(on) VCC = 600 V – 40 – ns
trVGE = + 15 V / - 15 V3) –35–ns
td(off) IC = 15 A, ind. load – 350 – ns
tfRGon = RGoff = 52 Ω–70–ns
Eon 5) Tj = 125 °C–2–mWs
Eoff 5) –1,4–mWs
Inverse Diode 8)
VF = VEC IF = 15 A VGE = 0 V; – 2,0(1,8) 2,5 V
VF = VEC IF = 25 A Tj = 25 (125) °C – 2,3(2,1) – V
VTO Tj = 125 °C – 1,1 1,2 V
rTTj = 125 °C – 45 70 mΩ
IRR IF = 15 A; Tj = 25 (125) °C2) – 12(16) – A
Qrr IF = 15 A; Tj = 25 (125) °C2) –1(2,7)– µC
Thermal Characteristics
Rthjc per IGBT – – 0,86 °C/W
Rthjc per diode 8) ––1,5 °C/W
Rthch per module – – 0,05 °C/W
Sixpack
by SEMIKRON 0898 B 6 – 63
© by SEMIKRONB 6 – 64
SKM 22 GD 123 D ...
0898
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
R
G
= 52 Ω
1 pulse
T
C
= 25 °C
T
j
< 150 °C
T
j
< 150 °C
V
GE
= + 15 V
t
sc
< 10 ms
L < 25 nH
I
CN
= 15 A
Fig. 1 Rated power dissipation P
tot
= f (T
C
) Fig. 2 Turn-on /-off energy = f (I
C
)
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
I
C
= 15 A
T
j
< 150 °C
V
GE
= + 15 V
R
Goff
= 52 Ω
I
C
= 15 A
Fig. 3 Turn-on /-off energy = f (R
G
) Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
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T
j
= 150 °C
V
GE
> 15 V
P
cond(t)
= V
CEsat(t)
. I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
. I
C(t)
V
CE(TO)(Tj)
≤ 1,5 + 0,002 (T
j
- 25) [V]
typ.: r
CE(Tj)
= 0,067 + 0,00027 (T
j
- 25) [Ω]
max.: r
CE(Tj)
= 0,100 + 0,00033 (T
j
- 25) [Ω]
valid for V
GE
= + 15 + 2
− 1 [V]; I
C
> 0,3 I
Cnom
Fig. 9 Typ. output characteristic, t
p
= 80 µs; 25 °C Fig. 10 Typ. output characteristic, t
p
= 80 µs; 125 °C
Fig. 11 Saturation characteristic (IGBT) Fig. 12 Typ. transfer characteristic, t
p
= 80 µs; V
CE
= 20 V
Calculation elements and equations
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
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V
GE
= 0 V
f = 1 MHZ
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
I
C
= 15 A
induct. load
I
Cpuls
= 15 A
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
R
Gon
= 52 Ω
R
Goff
= 52 Ω
induct. load
Fig. 15 Typ. switching times vs. I
C
Fig. 16 Typ. switching times vs. gate resistor R
G
Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse
Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.V
CE
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© by SEMIKRON B 6 – 670898
© by SEMIKRONB 6 – 68
SKM 22 GD 123 D ...
0898
This is an electrostatic discharge
sensitive device (ESD). Please ob-
serve the international standard
IEC 747-1, Chapter IX.
Two devices are supplied in one
SEMIBOX A.
Larger packing units (10 and 20
pieces) are used if suitable.
SEMIBOX → C - 1.
Mechanical Data
Symbol Conditions Values Units
min. typ. max.
M
1
to heatsink, SI Units (M5) 4 – 5 Nm
to heatsink, US Units 35 – 44 lb.in.
a – – 5x9,81 m/s
2
w – – 175 g
Case outlines and circuit diagrams
Dimensions in mm
SEMITRANS Sixpack
Case D 67
UL Recognized
File no. E 63 532
SKM 22 GD 123 D
SEMITRANS Sixpack
Case D 68
UL Recognized
Special version on request
SKM 22 GD 123 DL
SKM 40 GD 123 DL
SKM 75 GD 123 DL
