IXFN44N80 - IXYS - Datasheet.Live

Features

•International standard packages

•miniBLOC, with Aluminium nitride

isolation

•Low RDS (on) HDMOSTM process

•Rugged polysilicon gate cell

structure

•Unclamped Inductive Switching

(UIS) rated

•Low package inductance

•Fast intrinsic Rectifier

Applications

•DC-DC converters

•Battery chargers

•Switched-mode and resonant-mode

power supplies

•DC choppers

•Temperature and lighting controls

Advantages

•Easy to mount

•Space savings

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 3mA 800 V

VGS(th) VDS = VGS, ID = 8mA 2.5 4.5 V

IGSS VGS = ±20V, VDS = 0V ±200 nA

IDSS VDS = VDSS 100 μA

VGS = 0V TJ = 125°C 2 mA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 0.165 Ω

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 800 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ800 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C, Chip capability 44 A

IDM TC= 25°C, pulse width limited by TJM 176 A

IAR TC= 25°C44A

EAR TC= 25°C64mJ

EAS TC= 25°C4J

dV/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 5 V/ns

TJ≤ 150°C, RG = 1Ω

PDTC= 25°C 700 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

VISOL 50/60 Hz, RMS t = 1min 2500 V~

IISOL ≤ 1mA t = 1s 3000 V~

MdMounting torque 1.5/13 Nm/lb.in.

Terminal connection torque 1.3/11.5 Nm/lb.in.

Power MOSFET

HiPerFETTM

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low trr

DS98594E(08/07)

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

IXFN44N80 VDSS = 800V

ID25 = 44A

RDS(on) ≤≤

≤≤

≤ 0.165ΩΩ

ΩΩ

Ω

S

G

S

D

Weight 30 g

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN44N80

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = 15V, ID = 0.5 • ID25, Note 1 32 50 S

Ciss 10000 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 1300 pF

Crss 330 pF

td(on) Resistive Switching Times 35 ns

trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 48 ns

td(off) RG = 1Ω (External) 100 ns

tf 24 ns

QG(on) 380 nC

QGS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 70 nC

QGD 170 nC

RthJC 0.18 °C/W

RthCK 0.05 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

ISVGS = 0V 44 A

ISM Repetitive, pulse width limited by TJM 176 A

VSD IF = IS, VGS = 0V, Note 1 1.3 V

trr 250 ns

QRM IF = 22A, -di/dt = 100A/μs, VR = 100V 1.2 μC

IRM 8 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255

B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169

D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169

F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193

H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481

K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033

M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001

O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235

Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174

S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987

U -0.05 0.1 -0.002 0.004

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

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IXFN44N80

TC - Degrees C

-50 -25 0 25 50 75 100 125 150

ID - Amperes

0

10

20

30

40

50

ID - Amperes

0 20406080

RDS(ON) - Normalized

0.8

1.2

1.6

2.0

2.4

VDS - Volts

0 5 10 15 20

ID - Amperes

0

15

30

45

60

VDS - Volts

0 5 10 15 20

ID - Amperes

0

15

30

45

60

75

90

VGS = 10V

TJ = 125OC

TJ = 25OC

4V

5V

TJ = 25oC

TJ = 25OC

TJ = 125oC

VGS = 9V

8V

7V

6V

TJ = 125OC

5V

VGS = 9V

8V

7V

6V

VGS - Volts

3.5 4.0 4.5 5.0 5.5

ID - Am peres

0

10

20

30

40

50

60

TJ - Degrees C

25 50 75 100 125 150

RDS(ON) - Normalized

1.0

1.3

1.6

1.9

2.2

2.5

ID = 22A

VGS = 10V

ID = 44 A

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN44N80

VSD - Vo lts

0.2 0.4 0.6 0.8 1.0 1.2 1.4

0

20

40

60

80

100

Pulse Width - Seconds

10-4 10-3 10-2 10-1 100101

R(th)

JC

K/W

0.001

0.010

0.100

1.000

VDS - Vo l ts

0 5 10 15 20 25 30 35 40

Capacitance - pF

100

1000

10000

Gate Charge - nC

0 100 200 300 400

0

2

4

6

8

10

Crss

Coss

VDS = 500 V

ID = 18 A

IG = 10 mA f = 100kHz

TJ = 125OC

TJ = 25OC

Ciss

30000

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