STEMENS AKTIENGESELLSCHAF SIEMENS U7E D WM 8235605 0027500 4 MMSIEG BPX38 SERIES PHOTOTRANSISTOR Tra (-Gl FEATURES * Silicon NPN Epitaxial Phototransistor * TO-18 Hermetic Package * Flat Glass Lens * Pramium Hi-Rel Device Moderate Gain Wide Acceptance Angle, 80 * Five Sensitivity Ranges DESCRIPTION The BPX38 is a silicon epitaxial planar phototransistor in an 18 A 3 DIN 41876 (TO-18) case with a flat window and high radiant sensitivity for front trradiance. The flat window has no influence on light paths. The collector terminal ts electrically connected to the case. The BPX38 Is suitable for industrial appli- cations where lens systems are used. Package Dimensions in Inches (mm) 140 (2 8) 52 ECB s ' i, | / 217155) 187 01 211 (5,38) + (475) (2,54) @ Max . ; ay t 571 (14 5) (5 35) 217 492 {12 5) 199 155) (6 05) Maximum Ratings Operating and Storage Temperature (T,,,. Tap) - - tee 6 GEC to +125C Soldering Temperature (distance from soldering joint to package 22 mm} Dip Soldering Time (<5 sec.) (T,) . fees nee nee ones Iron Soldering Time (1 <3 sec.) (h) .. Collector Emitter Voltage (V..,) .... . Collector Current (i,) ... Collector Peak Current tt <10 us) (ne ). Emitter Base Voltage (V,,) pee eee Power Dissipation (P,,,) T,,,= 25C .. Thermnai Resistance (Ry) tee ane Characteristics (T,_,=25C) Wavelangth of Max Photosensitvily apane ago nm Spectral Range of Photosensitivity x 450 -1150 nm Radiant Sensitive Area A 0675 mm? Die Area LxW 1x1 mm Distance Die Surface to Package Surface H 2.25-2 55 mm Half Angle 9 +40 Deg. Photocurrent of the Collector, Base Diods (Ej=1000 Ix, V,.=5 V) leg 5.5 pA (E,=05 mWicm?, 4=950 nm, V..=5 ) loca 18 pA Capacitance (V,-=0 V, f=1 MHz, E=0) Coe 23 pF (V,,=0 V, f=1 MHz, E=0) Cos 39 pF (V,,=0 V, f= 1 MHz, E=0) Coy 47 pF Collector Emitter Leakage Current (V,.=25 V, E=0) loco 20 ($300) nA -2 -3 4 5 -6% Photocurrent, Collector to Emitter (Note 1) (E=1000 Ix, standard kght A, V.=5 vy, hee 0.95 15 23 36 46 |mA (E,=0 5 mWiem2, 4=950 nm, V=5 ) bee | 02-04 | 032-063) 05-10 | 08-16 2125 | mA Rise/Fall Time (1,.=1 MA, Vee=5 V, R= 1 kQ, 4=830 nm) tl 9 12 15 18 22 ys Collector Emitter Saturation Voltage (i=l POEM #03, 4=950 nm, V,.=5 V) Veen | 200 200 200 200 200 | mv Current Gain (E,=0 5 mWiom?, is 4=950 nm, V..=5 V) lea | 170 280 420 650 840 The iluminances reler to unfiltered racialon of a tungsten filament lamp at @ color temperature of 2856K (standard hight A in accordance with DIN 5033 and IEC pub! 306-11) Irradlance , measured with HP rachant flux meter 8334A wath option 013 Notes: 1 Measured wih LED a= 950 nm logge = Photocurrent of transrsiors, lca? Photocurrent of Collector-Base-Diode 2 Supphes of Ihts group cannot be guaranteed due to unforeseeable spread of yield in this case we will feserve us the nght of delivering a subsiituie group 9-8 uoyhuyepozoyd /S1OIS|SULNDOU Directional characteristics So. - Xe) = HE.) G?E D MM 6235605 0027501 & MESIEG Fhotocurrant f, Relative speciral sensilivity 5... = fix 8 8 e 8 3 $ 2 5 5 &. 2 ga WALI 1 8 Re 82 -8 Gi gz PNG : ma Be ~~ E 4 =o -~ nd a' & 4 % aft =~ = T = + a, oo ; = le = " 8 aly - - = 9. - aa i Se he a 8 Sr ; oo =: & \ > a a sw BR g +} -- e om 2 i 1 { . S eu x ' I t t 1 R ae = = I ! i Je os o 4 2 mw < * ~ = ee = zee 22 2 5 8 5 So ae ee 2S jf F#= = 2 ~2[8- 3 + es < 8 2 8 2! i i : 3 ~ i = a on re sz 5 = B 2% 4 1 ~ 3 2 od te 2 = 2 2 2 5 24 ~ ae id ; = = = | _ 3 = a = 5 2 = 3 1 2 2 2 2 a 8 2 : ; 3 5 5 mos Og z = a = 2 : I 7 = 2 2 2 2 2 g = Collactor emitter capacitance = t > t ' + oo So rtd 8 LL vba d z ag = 2 7 Fe STEMENS AKTIENGESELLSCHAF BPX 38 9-9