VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 * * * * Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 3400 V, VCEM 4500 V VGE 15 V, Tvj 125 C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 4500 V 40 A 80 A 20 V 10 s 125 C 5SMX 12N4507 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 4500 Collector-emitter saturation voltage VCE sat VGE = 0 V, IC = 1 mA, Tvj = 25 C IC = 40 A, VGE = 15 V Tvj = 125 C 4.0 V Tvj = 25 C Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C Qge Input capacitance Cies V V VCE = 4500 V, VGE = 0 V Gate charge 100 Tvj = 125 C IC = 10 mA, VCE = VGE, Tvj = 25 C 2500 nA 5.5 7.5 V IC = 40 A, VCE = 2800 V, VGE = -15 ..15 V 500 Cres 0.07 Internal gate resistance RGint 5 Turn-on delay time td(on) td(off) Fall time Turn-on switching energy Turn-off switching energy Short circuit current 2) tf Eon Eoff ISC nC 7.45 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Reverse transfer capacitance Turn-off delay time A 500 Coes tr A -500 Output capacitance Rise time Unit 3.0 ICES VGE(TO) max Tvj = 25 C Collector cut-off current Gate-emitter threshold voltage typ 0.28 VCC = 2800 V, IC = 40 A, RG = 33 , VGE = 15 V, L = 6000 nH, inductive load Tvj = 25 C 160 Tvj = 125 C 155 Tvj = 25 C 100 Tvj = 125 C 105 VCC = 2800 V, IC = 40 A, RG = 33 , VGE = 15 V, L = 6000 nH, inductive load Tvj = 25 C 630 Tvj = 125 C 715 Tvj = 25 C 425 Tvj = 125 C 455 Tvj = 25 C 55 VCC = 2800 V, IC = 40 A, VGE = 15 V, RG = 33 , L = 6000 nH, inductive load, FWD: 1/2 5SLX12N4506 VCC = 2800 V, IC = 40 A, VGE = 15 V, RG = 33 , L = 6000 nH, inductive load nF ns ns ns ns mJ Tvj = 125 C 85 Tvj = 25 C 165 mJ Tvj = 125 C tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 3400 V, VCEM 4500 V 205 200 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1626-03 July 06 page 2 of 5 5SMX 12N4507 Mechanical properties Parameter Unit Overall die L x W exposed L x W (except gate pad) front metal Dimensions gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 + Al back (C) AlSi1 + TiNiAg 14.3 x 14.3 mm 9.0 x 9.0 mm 1.51 x 1.48 mm 530 20 m 4+8 m 1.8 + 1.2 m For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1626-03 July 06 page 3 of 5 5SMX 12N4507 80 80 VCE = 20 V 70 70 25 C 60 60 125 C 50 IC [A] IC [A] 50 40 40 30 30 20 20 10 10 125 C 25 C VGE = 15 V 0 0 0 1 2 3 4 5 6 7 0 1 2 3 VCE [V] Fig. 1 4 5 6 7 8 9 10 11 12 13 VGE [V] Typical onstate characteristics Fig. 2 Typical transfer characteristics 0.3 0.4 VCC = 2800 V RG = 33 ohm VGE = 15 V Tvj = 125 C L = 6 H 0.35 0.3 0.25 Eoff 0.2 0.2 Eon, Eoff [J] Eon, E off [J] 0.25 Eoff 0.15 Eon 0.15 0.1 Eon 0.1 VCC = 2800 V IC = 40 A VGE = 15 V Tvj = 125 C L = 6 H 0.05 0.05 0 0 0 20 40 60 80 100 0 IC [A] Fig. 3 Typical switching characteristics vs collector current 50 100 150 200 250 RG [ohm] Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1626-03 July 06 page 4 of 5 5SMX 12N4507 10 20 Cies VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 2800 V 15 1 VCC = 3400 V C [nF] VGE [V] Coes 10 Cres 0.1 5 IC = 40 A Tvj = 25 C 0 0.01 0.0 Fig. 5 0.1 0.2 0.3 Qg [C] 0.4 Typical gate charge characteristics 0.5 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1626-03 July 06